| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of the soft reverse characteristics of n + p drain diodes
|
Theunissen, M.J.J.
|
|
1985
|
28 |
5 |
p. 417-425
9 p.
|
artikel
|
| 2 |
Behavior of CMOS inverters at cryogenic temperatures
|
Laramée, J.
|
|
1985
|
28 |
5 |
p. 453-456
4 p.
|
artikel
|
| 3 |
Decomposition of generation-recombination noise spectra in separate Lorentzians
|
van Rheenen, A.D.
|
|
1985
|
28 |
5 |
p. 457-463
7 p.
|
artikel
|
| 4 |
Deep trapping of implanted Na+ and Li+ ions near the Si/SiO2 interface in metal-oxide-silicon structures
|
Greeuw, G.
|
|
1985
|
28 |
5 |
p. 509-516
8 p.
|
artikel
|
| 5 |
Editorial—Software survey section
|
|
|
1985
|
28 |
5 |
p. I-III
nvt p.
|
artikel
|
| 6 |
Fermi level pinning by interface states: A calculation of the height and the shape of the Schottky barrier
|
Palau, J.M.
|
|
1985
|
28 |
5 |
p. 499-508
10 p.
|
artikel
|
| 7 |
1/f noise in n +-p-n microwave transistors
|
Zhu, X.C.
|
|
1985
|
28 |
5 |
p. 473-477
5 p.
|
artikel
|
| 8 |
Invariant imbedding in semiconductor device simulation
|
Lai, P.T.
|
|
1985
|
28 |
5 |
p. 435-442
8 p.
|
artikel
|
| 9 |
Maximum depletion width of MOS structures at high inversion
|
Lehovec, Kurt
|
|
1985
|
28 |
5 |
p. 531-532
2 p.
|
artikel
|
| 10 |
Measurement of the quasi-static C-V curves of an MIS structure in the presence of charge leakage
|
Monderer, Benjamin
|
|
1985
|
28 |
5 |
p. 447-451
5 p.
|
artikel
|
| 11 |
Normalization in semiconductor problems
|
Warner Jr., R.M.
|
|
1985
|
28 |
5 |
p. 529-530
2 p.
|
artikel
|
| 12 |
Oxygen behavior in liquid phase epitaxial GaAs
|
Chang, J.S.C.
|
|
1985
|
28 |
5 |
p. 479-484
6 p.
|
artikel
|
| 13 |
Schottky-barrier mobility profiling measurements with gate-current corrections
|
Look, D.C.
|
|
1985
|
28 |
5 |
p. 521-527
7 p.
|
artikel
|
| 14 |
Solid: High-voltage, high-gain 300 nm channel-length MOSFETs—I. Simulation
|
Horiuchi, Masatada
|
|
1985
|
28 |
5 |
p. 465-472
8 p.
|
artikel
|
| 15 |
Space-charge controlled pseudo-capacitance in thin films
|
Reddy, Umpathi K.
|
|
1985
|
28 |
5 |
p. 532-535
4 p.
|
artikel
|
| 16 |
Study of boron redistribution during thermal oxidation and comparison of different models
|
Eranna, G.
|
|
1985
|
28 |
5 |
p. 443-445
3 p.
|
artikel
|
| 17 |
Surface recombination velocity—A useful concept?
|
Rees, G.J.
|
|
1985
|
28 |
5 |
p. 517-519
3 p.
|
artikel
|
| 18 |
The annealing of 1 MeV implantations of boron in silicon
|
Oosterhoff, S.
|
|
1985
|
28 |
5 |
p. 427-433
7 p.
|
artikel
|
| 19 |
Theory of interband tunneling in semiconductors
|
Chakraborty, P.K.
|
|
1985
|
28 |
5 |
p. 493-497
5 p.
|
artikel
|
| 20 |
Transient capacitance spectroscopy in heavily compensated semiconductors
|
Stiévenard, D.
|
|
1985
|
28 |
5 |
p. 485-492
8 p.
|
artikel
|
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