| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A fast extrapolation technique for measuring minority-carrier generation lifetime
|
Yue, C.S.
|
|
1985
|
28 |
4 |
p. 403-406
4 p.
|
artikel
|
| 2 |
An investigation of steady-state velocity overshoot in silicon
|
Baccarani, G.
|
|
1985
|
28 |
4 |
p. 407-416
10 p.
|
artikel
|
| 3 |
Compensated MOSFET devices
|
Klaassen, F.M.
|
|
1985
|
28 |
4 |
p. 359-373
15 p.
|
artikel
|
| 4 |
Complete exploration of the silicon gap at the SiSiO2 interface of MIS tunnel diodes using the conductance technique at various temperatures and illumination levels
|
El-Sayed, M.
|
|
1985
|
28 |
4 |
p. 345-357
13 p.
|
artikel
|
| 5 |
CW laser annealing of boron implanted polycrystalline silicon
|
Peterström, S.
|
|
1985
|
28 |
4 |
p. 339-344
6 p.
|
artikel
|
| 6 |
Editorial—Software survey section
|
|
|
1985
|
28 |
4 |
p. I-III
nvt p.
|
artikel
|
| 7 |
Low-frequency noise spectra in MOSFETs made by the DMOS process
|
Zhu, X.C.
|
|
1985
|
28 |
4 |
p. 325-328
4 p.
|
artikel
|
| 8 |
On-state modeling of power JFET structures in the bipolar mode
|
Bellone, Salvatore
|
|
1985
|
28 |
4 |
p. 317-324
8 p.
|
artikel
|
| 9 |
Small-signal analysis of the gate-controlled diode
|
DeMassa, T.A.
|
|
1985
|
28 |
4 |
p. 393-401
9 p.
|
artikel
|
| 10 |
Studies of turn-off effects in power semiconductor devices
|
Danielson, B.E.
|
|
1985
|
28 |
4 |
p. 375-391
17 p.
|
artikel
|
| 11 |
Trap distribution in gold-refractory/GaAs Schottky barriers
|
Christou, A.
|
|
1985
|
28 |
4 |
p. 329-338
10 p.
|
artikel
|
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