| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A simple method of modelling the C-tV profiles of high-low junctions and heterojunctions
|
Missous, M.
|
|
1985
|
28 |
3 |
p. 233-237
5 p.
|
artikel
|
| 2 |
Attojoule MOSFET logic devices using low voltage swings and low temperature
|
Tewksbury, S.K.
|
|
1985
|
28 |
3 |
p. 255-276
22 p.
|
artikel
|
| 3 |
Characterization of interface states at Ni/nCdF2 Schottky barrier type diodes and the effect of CdF2 surface preparation
|
Singh, A.
|
|
1985
|
28 |
3 |
p. 223-232
10 p.
|
artikel
|
| 4 |
Comments on the Huang and Taylor model of ion-implanted silicon-gate depletion-mode IGFET
|
Marciniak, W.
|
|
1985
|
28 |
3 |
p. 313-315
3 p.
|
artikel
|
| 5 |
Editorial-software survey section
|
|
|
1985
|
28 |
3 |
p. I-III
nvt p.
|
artikel
|
| 6 |
Excess gate current in the static induction transistor
|
Płotka, Piotr
|
|
1985
|
28 |
3 |
p. 217-221
5 p.
|
artikel
|
| 7 |
Influence of the dopant density profile on minority-carrier current in shallow, heavily doped emitters of silicon bipolar devices
|
Cuevas, Andrés
|
|
1985
|
28 |
3 |
p. 247-254
8 p.
|
artikel
|
| 8 |
Mobility fluctuation1/f noise in silicon p +-n-p transistors
|
Kilmer, J.
|
|
1985
|
28 |
3 |
p. 287-288
2 p.
|
artikel
|
| 9 |
One-dimensional three-terminal thyristor modelling at high current densities and stable common gate configuration
|
Fulop, W.
|
|
1985
|
28 |
3 |
p. 239-245
7 p.
|
artikel
|
| 10 |
Schottky barriers on atomically clean cleaved GaAs
|
Newman, N.
|
|
1985
|
28 |
3 |
p. 307-312
6 p.
|
artikel
|
| 11 |
Temperature behavior of insulated gate transistor characteristics
|
Baliga, B.Jayant
|
|
1985
|
28 |
3 |
p. 289-297
9 p.
|
artikel
|
| 12 |
Theoretical calculations of Debye length, built-in potential and depletion layer width versus dopant density in a heavily doped p-n junction diode
|
Teng, K.W.
|
|
1985
|
28 |
3 |
p. 277-285
9 p.
|
artikel
|
| 13 |
Transferred-electron effect in InGaAsP alloys lattice-matched to InP
|
Kowalsky, W.
|
|
1985
|
28 |
3 |
p. 299-305
7 p.
|
artikel
|
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