| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An accurate and analytic threshold-voltage model for small-geometry MOSFETs with single-channel ion implantation in VLSI
|
Wu, Ching-Yuan
|
|
1985
|
28 |
12 |
p. 1263-1269
7 p.
|
artikel
|
| 2 |
An accurate mobility model for the I–V characteristics of n-channel enhancement-mode MOSFETs with single-channel boron implantation
|
Wu, Ching-Yuan
|
|
1985
|
28 |
12 |
p. 1271-1278
8 p.
|
artikel
|
| 3 |
A new threshold-voltage model for small-geometry buried-channel MOSFETs
|
Wu, Ching-Yuan
|
|
1985
|
28 |
12 |
p. 1283-1289
7 p.
|
artikel
|
| 4 |
Approximation of the carrier generation rate in illuminated silicon
|
Furlan, Jože
|
|
1985
|
28 |
12 |
p. 1241-1243
3 p.
|
artikel
|
| 5 |
Breakdown voltage analysis of planar p-n junctions taking into account the radius of curvature of the corners in the patterning mask
|
Ueda, Jun
|
|
1985
|
28 |
12 |
p. 1245-1249
5 p.
|
artikel
|
| 6 |
Characteristics of n-CuInSe2/Au Schottky diodes
|
Prasad, J.J.B.
|
|
1985
|
28 |
12 |
p. 1251-1254
4 p.
|
artikel
|
| 7 |
Compositional dependence of permittivity in quarternary III–V semiconductor compounds
|
Pal, B.B.
|
|
1985
|
28 |
12 |
p. 1235-1239
5 p.
|
artikel
|
| 8 |
Deep-level transient spectroscopy measurements using high Schottky barriers
|
Stolt, L.
|
|
1985
|
28 |
12 |
p. 1215-1221
7 p.
|
artikel
|
| 9 |
Diffused junction effects in punch-through diodes
|
de Cogan, D.
|
|
1985
|
28 |
12 |
p. 1291-1292
2 p.
|
artikel
|
| 10 |
Editorial—software survey section
|
|
|
1985
|
28 |
12 |
p. I-III
nvt p.
|
artikel
|
| 11 |
Field-enhanced emission and capture in polysilicon pn junctions
|
Greve, D.W.
|
|
1985
|
28 |
12 |
p. 1255-1261
7 p.
|
artikel
|
| 12 |
High frequency distortion analysis of DMOS transistors
|
Sin, J.K.O.
|
|
1985
|
28 |
12 |
p. 1223-1233
11 p.
|
artikel
|
| 13 |
Hot-electron transport in In0.53Ga0.47As
|
Ahmed, S.R.
|
|
1985
|
28 |
12 |
p. 1193-1197
5 p.
|
artikel
|
| 14 |
MIS grating solar cells with noninverting antireflection coatings
|
Girisch, R.
|
|
1985
|
28 |
12 |
p. 1169-1179
11 p.
|
artikel
|
| 15 |
On occupation functions of donor- and acceptor-like interface states in metal-insulator-semiconductor tunnel structures
|
Chang, C.Y.
|
|
1985
|
28 |
12 |
p. 1181-1191
11 p.
|
artikel
|
| 16 |
The contrast characteristics of the grain boundary near the boundary layer in polycrystalline solar cells
|
Romanowski, Andrzej
|
|
1985
|
28 |
12 |
p. 1199-1206
8 p.
|
artikel
|
| 17 |
The SEM-EBIV signals near the grain boundary in a polycrystalline solar cell
|
Romanowski, Andrzej
|
|
1985
|
28 |
12 |
p. 1207-1214
8 p.
|
artikel
|
| 18 |
The trap-controlled transistor: a persistent electronic or optoelectronic device
|
Levinson, M.
|
|
1985
|
28 |
12 |
p. 1279-1282
4 p.
|
artikel
|
Tijdschrift beschrijving