| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A general model for interface-trap charge-pumping effects in MOS devices
|
Cilingiroglu, U.
|
|
1985
|
28 |
11 |
p. 1127-1141
15 p.
|
artikel
|
| 2 |
Analysis of junction-barrier-controlled Schottky (JBS) rectifier characteristics
|
Baliga, B.Jayant
|
|
1985
|
28 |
11 |
p. 1089-1093
5 p.
|
artikel
|
| 3 |
An integrated piezoelectric-insulator DMOST surface-acoustic-wave convolver
|
Comer, Alan E.
|
|
1985
|
28 |
11 |
p. 1117-1126
10 p.
|
artikel
|
| 4 |
Band bending at the InSbî—¸CdTe interface
|
van Welzenis, R.G.
|
|
1985
|
28 |
11 |
p. 1057-1063
7 p.
|
artikel
|
| 5 |
Charge collection in a Schottky diode as a mixed boundary-value problem
|
Donolato, C.
|
|
1985
|
28 |
11 |
p. 1143-1151
9 p.
|
artikel
|
| 6 |
Electromigration mechanisms in aluminum lines
|
Schreiber, H.-U.
|
|
1985
|
28 |
11 |
p. 1153-1163
11 p.
|
artikel
|
| 7 |
Electronic properties of polycrystalline ceramic cadmium sulphide
|
Saha, H.
|
|
1985
|
28 |
11 |
p. 1077-1087
11 p.
|
artikel
|
| 8 |
Liquid-phase epitaxy of In(As, Sb) on GaSb substrates using antimony-rich melts
|
Skelton, J.R.
|
|
1985
|
28 |
11 |
p. 1166-1168
3 p.
|
artikel
|
| 9 |
On the interaction of hydrogen RF plasma with implantation-induced defects in MOS structures
|
Danesh, P.
|
|
1985
|
28 |
11 |
p. 1095-1099
5 p.
|
artikel
|
| 10 |
Optical transmission of fluorine-doped tin oxide films
|
Athwal, I.S.
|
|
1985
|
28 |
11 |
p. 1165-
1 p.
|
artikel
|
| 11 |
Photoacoustic and currentacoustic effects in optoelectronic devices
|
Thielemann, W.
|
|
1985
|
28 |
11 |
p. 1111-1116
6 p.
|
artikel
|
| 12 |
Software survey section
|
|
|
1985
|
28 |
11 |
p. I-III
nvt p.
|
artikel
|
| 13 |
The theory of majority-carrier motion in the Haynes-Shockley experiment
|
Parrott, J.E.
|
|
1985
|
28 |
11 |
p. 1065-1075
11 p.
|
artikel
|
| 14 |
Two-dimensional Monte Carlo simulation of a submicron GaAs MESFET with a nonuniformly doped channel
|
Williams, C.K.
|
|
1985
|
28 |
11 |
p. 1105-1109
5 p.
|
artikel
|
| 15 |
Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region
|
Kroemer, H.
|
|
1985
|
28 |
11 |
p. 1101-1103
3 p.
|
artikel
|
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