| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An analytic model to estimate the avalanche breakdown voltage improvement for LDD devices
|
Lai, F.S.
|
|
1985
|
28 |
10 |
p. 959-965
7 p.
|
artikel
|
| 2 |
An experimental study of backgating effects in GaAs MESFETs
|
Sriram, Saptharishi
|
|
1985
|
28 |
10 |
p. 979-989
11 p.
|
artikel
|
| 3 |
A simple method of calculating the minority-carrier current in heavily doped silicon
|
Kleefstra, M.
|
|
1985
|
28 |
10 |
p. 991-995
5 p.
|
artikel
|
| 4 |
Correlation between most 1/f noise and CCD transfer inefficiency
|
Vandamme, L.K.J.
|
|
1985
|
28 |
10 |
p. 1049-1056
8 p.
|
artikel
|
| 5 |
Deep centers in neutron-transmutation-doped gallium arsenide
|
Garrido, J.
|
|
1985
|
28 |
10 |
p. 1039-1043
5 p.
|
artikel
|
| 6 |
Deep depleted SOI MOSFETs with back potential control: A numerical simulation
|
Balestra, F.
|
|
1985
|
28 |
10 |
p. 1031-1037
7 p.
|
artikel
|
| 7 |
Design calculations for submicron gate-length AlGaAs/GaAs modulation-doped FET structures using carrier saturation velocity/charge-control model
|
Das, Mukunda B.
|
|
1985
|
28 |
10 |
p. 997-1005
9 p.
|
artikel
|
| 8 |
Editorial—Software survey section
|
|
|
1985
|
28 |
10 |
p. I-III
nvt p.
|
artikel
|
| 9 |
Experimental determination of short-channel MOSFET parameters
|
Chu Hao,
|
|
1985
|
28 |
10 |
p. 1025-1030
6 p.
|
artikel
|
| 10 |
High-speed integrated circuits based on InP-MISFETs with plasma SiO2 gate insulator
|
Pande, K.P.
|
|
1985
|
28 |
10 |
p. 1045-1048
4 p.
|
artikel
|
| 11 |
Temperature dependence of intergrain barriers in polycrystalline In-doped CdS films
|
Garcia-Cuenca, M.V.
|
|
1985
|
28 |
10 |
p. 1019-1023
5 p.
|
artikel
|
| 12 |
The Bethe condition for thermionic emission near an absorbing boundary
|
Berz, F.
|
|
1985
|
28 |
10 |
p. 1007-1013
7 p.
|
artikel
|
| 13 |
The role of nonuniform dielectric permittivity in the determination of heterojunction band offsets by C–V profiling through isotype heterojunctions
|
Babic, Dubravko I.
|
|
1985
|
28 |
10 |
p. 1015-1017
3 p.
|
artikel
|
| 14 |
Visible light emission from silicon MOSFETS
|
Das, N.C.
|
|
1985
|
28 |
10 |
p. 967-977
11 p.
|
artikel
|
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