| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Anisotropic magnetoconductance in metallic doped Ge:Sb
|
Ootuka, Youiti
|
|
1985
|
28 |
1-2 |
p. 101-107
|
artikel
|
| 2 |
Anomalous temperature dependence of 29Si NMR in heavily phosphorus doped silicon
|
Ikehata, S.
|
|
1985
|
28 |
1-2 |
p. 208
|
artikel
|
| 3 |
Bandgap narrowing due to many body effects in heavily doped semiconductors
|
Abram, R.A.
|
|
1985
|
28 |
1-2 |
p. 203
|
artikel
|
| 4 |
Band-gap narrowing in the space-charge region of heavily doped silicon diodes
|
Lowney, Jeremiah R.
|
|
1985
|
28 |
1-2 |
p. 187-191
|
artikel
|
| 5 |
Band tails in semiconductors
|
Kane, Evan O.
|
|
1985
|
28 |
1-2 |
p. 3-10
|
artikel
|
| 6 |
Bound state energy and line width due to the resonant interaction between optical phonon and electronic transitions in degenerate silicon
|
Jouanne, M.
|
|
1985
|
28 |
1-2 |
p. 39-45
|
artikel
|
| 7 |
Comments on the Coulomb glass
|
Pollak, M.
|
|
1985
|
28 |
1-2 |
p. 143-144
|
artikel
|
| 8 |
Conduction band tail estimated by X1–X3 splitting energy in heavily doped n-GaP
|
Endo, T.
|
|
1985
|
28 |
1-2 |
p. 205
|
artikel
|
| 9 |
Coulomb gap in disordered insulators
|
Hunt, A.
|
|
1985
|
28 |
1-2 |
p. 206-207
|
artikel
|
| 10 |
Disorder, fluctuations and electron interactions in doped semiconductors: A multiple-scattering approach
|
Ghazali, A.
|
|
1985
|
28 |
1-2 |
p. 145-149
|
artikel
|
| 11 |
Editorial Board
|
|
|
1985
|
28 |
1-2 |
p. IFC
|
artikel
|
| 12 |
Effect of high intrinsic ion concentrations on electron energies in solid solutions of III–V and II–VI semiconductors
|
Glicksman, Maurice
|
|
1985
|
28 |
1-2 |
p. 151-161
|
artikel
|
| 13 |
Effects of the Anderson localization on magnetoconductivity in metallic n-InSb and n-GaAs
|
Morita, S.
|
|
1985
|
28 |
1-2 |
p. 113-119
|
artikel
|
| 14 |
Electron and phonon self-energies in heavily doped germanium and silicon
|
Cardona, Manuel
|
|
1985
|
28 |
1-2 |
p. 31-38
|
artikel
|
| 15 |
Electronic structure of ultraheavily doped silicon
|
Vergés, J.A.
|
|
1985
|
28 |
1-2 |
p. 216
|
artikel
|
| 16 |
Ellipsometric study of the etch-stop mechanism in heavily doped silicon
|
Palik, E.D.
|
|
1985
|
28 |
1-2 |
p. 209
|
artikel
|
| 17 |
Energy-gap reduction in heavily doped silicon: Causes and consequences
|
Pantelides, Sokrates T.
|
|
1985
|
28 |
1-2 |
p. 17-24
|
artikel
|
| 18 |
Enhanced spin-lattice relaxation near the metal-insulator transition
|
Paalanen, M.A.
|
|
1985
|
28 |
1-2 |
p. 121-125
|
artikel
|
| 19 |
Foreword
|
Landsberg, P.T.
|
|
1985
|
28 |
1-2 |
p. v
|
artikel
|
| 20 |
Heavily doped silicon studied by luminescence and selective absorption
|
Wagner, Joachim
|
|
1985
|
28 |
1-2 |
p. 25-30
|
artikel
|
| 21 |
Heavy doping effects on bandgaps, effective intrinsic carrier concentrations and carrier mobilities and lifetimes
|
Bennett, Herbert S.
|
|
1985
|
28 |
1-2 |
p. 193-200
|
artikel
|
| 22 |
Impurity hopping transport in moderately doped, lightly-compensated semiconductors
|
Baron, R.
|
|
1985
|
28 |
1-2 |
p. 204
|
artikel
|
| 23 |
Interaction effects in the weakly localized regime and the anomalous conductivity of Sb-doped Ge at low temperature
|
Fukuyama, H.
|
|
1985
|
28 |
1-2 |
p. 163-169
|
artikel
|
| 24 |
Introduction
|
Reyes, R.W.
|
|
1985
|
28 |
1-2 |
p. vii
|
artikel
|
| 25 |
Is expanded fluid mercury an excitonic insulator?
|
Turkevich, Leonid A.
|
|
1985
|
28 |
1-2 |
p. 213
|
artikel
|
| 26 |
Is there ever a minimum metallic conductivity?
|
Mott, N.F.
|
|
1985
|
28 |
1-2 |
p. 57-59
|
artikel
|
| 27 |
Lifetime broadening of a parabolic band edge of a pure semiconductor at various temperatures
|
Landsberg, P.T.
|
|
1985
|
28 |
1-2 |
p. 137-141
|
artikel
|
| 28 |
Magnetic tuning of the metal-insulator transition in n-InSb at very low temperatures
|
Mansfield, R.
|
|
1985
|
28 |
1-2 |
p. 109-112
|
artikel
|
| 29 |
Measuring and modeling minority carrier transport in heavily doped silicon
|
del Alamo, J.
|
|
1985
|
28 |
1-2 |
p. 47-54
|
artikel
|
| 30 |
Metal-insulator transition in the amorphous Si 1−x Au x system with a strong spin-orbit interaction
|
Nishida, Nobuhiko
|
|
1985
|
28 |
1-2 |
p. 81-86
|
artikel
|
| 31 |
Nuclear resonance in Ge:As under 〈111〉 stress
|
Tunstall, D.P.
|
|
1985
|
28 |
1-2 |
p. 212
|
artikel
|
| 32 |
Optical and elastic properties of ultraheavily doped silicon
|
Sood, A.K.
|
|
1985
|
28 |
1-2 |
p. 210
|
artikel
|
| 33 |
Recent developments and open questions on the absence of diffusion in random lattices
|
Anderson, P.W.
|
|
1985
|
28 |
1-2 |
p. 204
|
artikel
|
| 34 |
Renormalization group theory of the Anderson transition and its application to doped semiconductors
|
Kawabata, Arisato
|
|
1985
|
28 |
1-2 |
p. 131-134
|
artikel
|
| 35 |
Self-consistent treatment of screening and Coulomb scattering in silicon inversion layers at low temperatures
|
Stern, Frank
|
|
1985
|
28 |
1-2 |
p. 211
|
artikel
|
| 36 |
The effect of electron-hole scattering on minority carrier transport in bipolar transistors
|
Dumke, W.P.
|
|
1985
|
28 |
1-2 |
p. 183-186
|
artikel
|
| 37 |
The fascinating melting of silicon at T = 0
|
Combescot, Monique
|
|
1985
|
28 |
1-2 |
p. 205
|
artikel
|
| 38 |
The logarithmic temperature dependence of the resistivity near the Anderson transition in doped semiconductors
|
Ochiai, Y.
|
|
1985
|
28 |
1-2 |
p. 208
|
artikel
|
| 39 |
The low temperature magnetoresistance of arsenic-doped silicon near the metal—Insulator transition
|
Shafarman, W.N.
|
|
1985
|
28 |
1-2 |
p. 93-99
|
artikel
|
| 40 |
The magnetic field induced metal-insulator transition in indium phosphide and silicon
|
Long, A.P.
|
|
1985
|
28 |
1-2 |
p. 61-72
|
artikel
|
| 41 |
The metal-insulator transition in amorphous Nb:Si
|
Bishop, D.J.
|
|
1985
|
28 |
1-2 |
p. 73-79
|
artikel
|
| 42 |
The metal-insulator transition in magnetic semiconductors: Transport in Gd −x v x S 4
|
von Molnár, S.
|
|
1985
|
28 |
1-2 |
p. 127-130
|
artikel
|
| 43 |
The mobility and dynamical conductivity of Na-doped Si-(100) MOS systems
|
Gold, A.
|
|
1985
|
28 |
1-2 |
p. 87-91
|
artikel
|
| 44 |
Transport along grain boundaries in germanium bicrystals at low temperatures
|
Landwehr, G.
|
|
1985
|
28 |
1-2 |
p. 171-180
|
artikel
|
| 45 |
Transport in heavily doped devices
|
Van Vliet, Carolyn M.
|
|
1985
|
28 |
1-2 |
p. 214-215
|
artikel
|
| 46 |
Very heavily doped semiconductors as a “nearly-free-electron-gas” system
|
Berggren, K.-F.
|
|
1985
|
28 |
1-2 |
p. 11-15
|
artikel
|
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