| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Absorption coefficient of silicon for solar cell calculations
|
Rajkanan, K.
|
|
1979
|
22 |
9 |
p. 793-795
3 p.
|
artikel
|
| 2 |
A difficulty in the theory of p +-n junction diode noise
|
van der Ziel, A.
|
|
1979
|
22 |
9 |
p. 771-772
2 p.
|
artikel
|
| 3 |
Analysis of the interaction of an electron beam with a solar cell—III
|
von Roos, Oldwig
|
|
1979
|
22 |
9 |
p. 773-778
6 p.
|
artikel
|
| 4 |
An analytical model for the edge-illuminated silicon solar cell under concentrated sunlight
|
Grung, B.L.
|
|
1979
|
22 |
9 |
p. 755-760
6 p.
|
artikel
|
| 5 |
A new integrated voltage-controlled negative resistance device-Lambda MOSFET
|
Wu, Ching-Yuan
|
|
1979
|
22 |
9 |
p. 779-781
3 p.
|
artikel
|
| 6 |
A new technique for the determination of the charge centroid in MNOS structures
|
Krafcsik, I.
|
|
1979
|
22 |
9 |
p. 751-753
3 p.
|
artikel
|
| 7 |
A proposal for a new approach to heterojunction theory
|
Adams, M.J.
|
|
1979
|
22 |
9 |
p. 783-791
9 p.
|
artikel
|
| 8 |
Characterisation of linearly graded p-n junction
|
Rustagi, S.C.
|
|
1979
|
22 |
9 |
p. 819-827
9 p.
|
artikel
|
| 9 |
Effects of the operational modes on the temperature dependence of the Gunn diode admittance
|
Makino, Toshihiko
|
|
1979
|
22 |
9 |
p. 761-769
9 p.
|
artikel
|
| 10 |
SiSiO2 interface state spectroscopy using MOS tunneling structures
|
Card, H.C.
|
|
1979
|
22 |
9 |
p. 809-817
9 p.
|
artikel
|
| 11 |
Spatial resolution of SEM-EBIC images
|
Donolato, C.
|
|
1979
|
22 |
9 |
p. 797-799
3 p.
|
artikel
|
| 12 |
The PN-junction transition region
|
Guckel, H.
|
|
1979
|
22 |
9 |
p. 829-830
2 p.
|
artikel
|
| 13 |
Titanium in silicon as a deep level impurity
|
Chen, J.-W.
|
|
1979
|
22 |
9 |
p. 801-808
8 p.
|
artikel
|
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