| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Characteristics of three-terminal metal-tunnel if oxide-n/p + devices
|
Chik, K.C.
|
|
1979
|
22 |
6 |
p. 589-594
6 p.
|
artikel
|
| 2 |
Effects of quantum confinement and compositional grading on the band structure of heterojunctions
|
Bluyssen, H.J.A.
|
|
1979
|
22 |
6 |
p. 573-579
7 p.
|
artikel
|
| 3 |
Electrical behavior of an NPN GaAlAs/GaAs heterojunction transistor
|
Marty, A.
|
|
1979
|
22 |
6 |
p. 549-557
9 p.
|
artikel
|
| 4 |
Law of the junction for degenerate material with position-dependent band gap and electron affinity
|
Marshak, Alan H.
|
|
1979
|
22 |
6 |
p. 567-571
5 p.
|
artikel
|
| 5 |
Resistive gate DMOST for low distortion mixing
|
Stikvoort, E.F.
|
|
1979
|
22 |
6 |
p. 595-598
4 p.
|
artikel
|
| 6 |
Study of the surface properties of thermally oxidized silicon using surface acoustic wave attenuation
|
Webster, R.T.
|
|
1979
|
22 |
6 |
p. 541-548
8 p.
|
artikel
|
| 7 |
Theoretical estimates of the sheet resistance of Gaussian n-type ion-implanted layers in semiconductors: Phosphorus in silicon
|
Scarfone, L.M.
|
|
1979
|
22 |
6 |
p. 559-566
8 p.
|
artikel
|
| 8 |
Theory of metal-oxide-semiconductor solar cells
|
Srivastava, G.P.
|
|
1979
|
22 |
6 |
p. 581-587
7 p.
|
artikel
|
| 9 |
The spreading resistance of an inhomogeneous slab with a disc electrode as a mixed boundary value problem
|
Leong, M.S.
|
|
1979
|
22 |
6 |
p. 527-531
5 p.
|
artikel
|
| 10 |
Zn x Cd1−x S/Cu2S heterojunction solar cells—II: Junction analysis
|
Das, S.R.
|
|
1979
|
22 |
6 |
p. 533-539
7 p.
|
artikel
|
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