| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of AlGaAs-GaInAs cascade solar cell under AM 0-AM 5 spectra
|
Lamorte, M.F.
|
|
1979
|
22 |
5 |
p. 467-473
7 p.
|
artikel
|
| 2 |
A reproducible ohmic contact to n-type GaAs 0.6 P 0.4
|
Twu, Bor-Long
|
|
1979
|
22 |
5 |
p. 501-505
5 p.
|
artikel
|
| 3 |
Channel current limitations in GaAs MESFETS
|
Fukui, Hatsuaki
|
|
1979
|
22 |
5 |
p. 507-515
9 p.
|
artikel
|
| 4 |
Complementary Schottky barriers to n- and p-type silicon with SnO2 electrodes
|
Kajiyama, Kenji
|
|
1979
|
22 |
5 |
p. 525-526
2 p.
|
artikel
|
| 5 |
Dissociation of GaAs and Ga0.7Al0.3As during alloying of gold contact films
|
Kinsbron, E.
|
|
1979
|
22 |
5 |
p. 517-524
8 p.
|
artikel
|
| 6 |
Editorial announcement
|
|
|
1979
|
22 |
5 |
p. I-
1 p.
|
artikel
|
| 7 |
Model of 1/f noise in ion-implanted resistors as a function of the resistance, determined by a reverse bias voltage
|
Beck, H.G.E.
|
|
1979
|
22 |
5 |
p. 475-478
4 p.
|
artikel
|
| 8 |
Negative resistance and peak velocity in the central (000) valley of III–V semiconductors
|
Hauser, J.R.
|
|
1979
|
22 |
5 |
p. 487-493
7 p.
|
artikel
|
| 9 |
On the temperature dependence of subthreshold currents in MOS electron inversion layers
|
Card, H.C.
|
|
1979
|
22 |
5 |
p. 463-465
3 p.
|
artikel
|
| 10 |
Quantum effects in cryogenic microwave voltage amplifiers
|
van der Ziel, A.
|
|
1979
|
22 |
5 |
p. 451-453
3 p.
|
artikel
|
| 11 |
The effect of heat treatment on unpassivated and passivated gallium arsenide surfaces
|
Wood, David R.
|
|
1979
|
22 |
5 |
p. 479-485
7 p.
|
artikel
|
| 12 |
Transition metal deep centers in GaAs, GaP and Si
|
Partin, D.L.
|
|
1979
|
22 |
5 |
p. 455-461
7 p.
|
artikel
|
| 13 |
ZnxCd1−xS/Cu2S heterojunction solar cells—I: Fabrication and performance
|
Banerjee, A.
|
|
1979
|
22 |
5 |
p. 495-499
5 p.
|
artikel
|
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