| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A computer-aided analysis of one-dimensional thermal transients in n-p-n power transistors
|
Chryssafis, A.
|
|
1979
|
22 |
3 |
p. 249-256
8 p.
|
artikel
|
| 2 |
A method to determine minority carrier lifetime in GaAs light-emitting diodes
|
Müller, J.
|
|
1979
|
22 |
3 |
p. 257-260
4 p.
|
artikel
|
| 3 |
An investigation of dark current and photocurrent superposition in photovoltaic devices
|
Tarr, N.G.
|
|
1979
|
22 |
3 |
p. 265-270
6 p.
|
artikel
|
| 4 |
A note on photocurrents in extrinsic semiconductors
|
von Roos, Oldwig
|
|
1979
|
22 |
3 |
p. 229-232
4 p.
|
artikel
|
| 5 |
A simple model for determining effects of negative differential mobility and magnitude of saturated velocity on the performance of Schottky-barrier field effect transistors
|
Dawson, R.H.
|
|
1979
|
22 |
3 |
p. 343-346
4 p.
|
artikel
|
| 6 |
Barrier height change of Pt/Cr/n-GaAs Schottky contacts due to heat treatments
|
Hagio, M.
|
|
1979
|
22 |
3 |
p. 347-348
2 p.
|
artikel
|
| 7 |
Base current and dominant time constant of an n + n − pn + transistor operating in the upward mode
|
Poorter, Teunis
|
|
1979
|
22 |
3 |
p. 311-325
15 p.
|
artikel
|
| 8 |
Carrier transport across heterojunction interfaces
|
Wu, C.M.
|
|
1979
|
22 |
3 |
p. 241-248
8 p.
|
artikel
|
| 9 |
Characteristics of an aluminum-germanium photovoltaic cell
|
Chen, P.A.
|
|
1979
|
22 |
3 |
p. 277-278
2 p.
|
artikel
|
| 10 |
Determination of distributed fixed charge in CVD-oxide and its virtual elimination by use of HCl
|
Gaind, A.K.
|
|
1979
|
22 |
3 |
p. 303-309
7 p.
|
artikel
|
| 11 |
Double-step annealing and ambient effects on phosphorus implanted emitters in silicon
|
Koji, T.
|
|
1979
|
22 |
3 |
p. 335-342
8 p.
|
artikel
|
| 12 |
Effects of nitrogen annealing on electron scatterings in SiSiO2 interface
|
Yagi, A.
|
|
1979
|
22 |
3 |
p. 261-263
3 p.
|
artikel
|
| 13 |
Electron mobility in Si-MOSFETs with an additional implanted channel
|
Fischer, W.
|
|
1979
|
22 |
3 |
p. 225-228
4 p.
|
artikel
|
| 14 |
Erratum
|
|
|
1979
|
22 |
3 |
p. 353-
1 p.
|
artikel
|
| 15 |
Excess high frequency noise and flicker noise in MOSFETs
|
Takagi, K.
|
|
1979
|
22 |
3 |
p. 289-292
4 p.
|
artikel
|
| 16 |
Gallium indium arsenide photodiodes
|
Ahmad, K.
|
|
1979
|
22 |
3 |
p. 327-333
7 p.
|
artikel
|
| 17 |
Grid depth dependence of the characteristics of vertical channel field controlled thyristors
|
Baliga, B.Jayant
|
|
1979
|
22 |
3 |
p. 237-239
3 p.
|
artikel
|
| 18 |
High electric field effects in amorphous semiconducting (As2S3)1−x (PbS) x
|
Bhat, P.K.
|
|
1979
|
22 |
3 |
p. 283-284
2 p.
|
artikel
|
| 19 |
High frequency excess noise and flicker noise in GaFs FETs
|
Takagi, K.
|
|
1979
|
22 |
3 |
p. 285-287
3 p.
|
artikel
|
| 20 |
Influence of interface states on the write characteristics of MNOS memory structures
|
Popova, L.I.
|
|
1979
|
22 |
3 |
p. 349-351
3 p.
|
artikel
|
| 21 |
Minority carrier exclusion
|
Manifacier, J.-C.
|
|
1979
|
22 |
3 |
p. 279-281
3 p.
|
artikel
|
| 22 |
On the apparent narrowing of the bandgap in the base region of bipolar transistors
|
Popović, Radivoje S.
|
|
1979
|
22 |
3 |
p. 348-349
2 p.
|
artikel
|
| 23 |
Optimum conditions for second harmonic generation by hot-electron and electron-transfer effects in semiconductors
|
Yamamoto, Hiroaki
|
|
1979
|
22 |
3 |
p. 271-275
5 p.
|
artikel
|
| 24 |
Recombination in the end regions of pin diodes
|
Berz, F.
|
|
1979
|
22 |
3 |
p. 293-301
9 p.
|
artikel
|
| 25 |
The transfer-impedance method for noise in field-effect transistors
|
van Vliet, K.M.
|
|
1979
|
22 |
3 |
p. 233-236
4 p.
|
artikel
|
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