| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A better approach to the evaluation of the series resistance of solar cells
|
Rajkanan, K.
|
|
1979
|
22 |
2 |
p. 193-197
5 p.
|
artikel
|
| 2 |
A storage effect of majority carriers in MOS FET at punch-through
|
Muramoto, Susumu
|
|
1979
|
22 |
2 |
p. 220-221
2 p.
|
artikel
|
| 3 |
Cd1−xZnxS−PbS heterojunctions prepared by spray pyrolysis
|
Agnihotri, O.P.
|
|
1979
|
22 |
2 |
p. 218-220
3 p.
|
artikel
|
| 4 |
Determination of buried channel parameters from IV and CV measurements
|
Hendrickson, T.E.
|
|
1979
|
22 |
2 |
p. 199-204
6 p.
|
artikel
|
| 5 |
Diffusion length measurements in Schottky barrier GaAs solar cells
|
Lender, R.J.
|
|
1979
|
22 |
2 |
p. 213-214
2 p.
|
artikel
|
| 6 |
Electron beam induced current in biased MOS transistors
|
Hieke, E.K.
|
|
1979
|
22 |
2 |
p. 221-223
3 p.
|
artikel
|
| 7 |
Evaporated thin films of Sn1−xGexTe
|
Grassie, A.D.C.
|
|
1979
|
22 |
2 |
p. 217-218
2 p.
|
artikel
|
| 8 |
Generation-recombination noise at 77°K in silicon bars and JFETs
|
van der Ziel, A.
|
|
1979
|
22 |
2 |
p. 177-179
3 p.
|
artikel
|
| 9 |
Low-frequency noise in Schottky barrier diodes
|
Kleinpenning, T.G.M.
|
|
1979
|
22 |
2 |
p. 121-128
8 p.
|
artikel
|
| 10 |
On neutrality and equilibrium in semiconductors
|
Warner Jr., R.M.
|
|
1979
|
22 |
2 |
p. 215-216
2 p.
|
artikel
|
| 11 |
Physical fundamentals and technical aspects of the lateral thyristor
|
Aulbach, Rudolf
|
|
1979
|
22 |
2 |
p. 163-175
13 p.
|
artikel
|
| 12 |
PIN photodetector under transient conditions: Simulation and experiments
|
Conti, M.
|
|
1979
|
22 |
2 |
p. 151-155
5 p.
|
artikel
|
| 13 |
Solid phase formation in Au: Ge/Ni, Ag/In/Ge, In/Au: Ge GaAs ohmic contact systems
|
Christou, A.
|
|
1979
|
22 |
2 |
p. 141-149
9 p.
|
artikel
|
| 14 |
Some considerations in the formulation of IC yield statistics
|
Hu, S.M.
|
|
1979
|
22 |
2 |
p. 205-211
7 p.
|
artikel
|
| 15 |
Temperature- and potential-distributions determination method for hall plates, considering the effect of temperature-dependent conductivity and hall coefficient
|
Mimizuka, Teruo
|
|
1979
|
22 |
2 |
p. 157-161
5 p.
|
artikel
|
| 16 |
The detrimental influence of stacking faults on the refresh time of MOS memories
|
Strack, H.
|
|
1979
|
22 |
2 |
p. 135-140
6 p.
|
artikel
|
| 17 |
Theory of switching in p-n-insulator (tunnel)-metal devices
|
Habib, S.E-D.
|
|
1979
|
22 |
2 |
p. 181-192
12 p.
|
artikel
|
| 18 |
Thermal design of microwave PIN diodes
|
Chaturvedi, P.K.
|
|
1979
|
22 |
2 |
p. 129-134
6 p.
|
artikel
|
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