| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A long-channel MOSFET model
|
Van de Wiele, F.
|
|
1979
|
22 |
12 |
p. 991-997
7 p.
|
artikel
|
| 2 |
Characterization of phosphorus implanted low pressure chemical vapor deposited polycrystalline silicon
|
Yaron, Giora
|
|
1979
|
22 |
12 |
p. 1017-1024
8 p.
|
artikel
|
| 3 |
Comparison of 1 f noise in several commercial MOSFETs
|
Takagi, K.
|
|
1979
|
22 |
12 |
p. 1053-
1 p.
|
artikel
|
| 4 |
Distributed effect in GaAs MESFET
|
Yen-Chu Wang,
|
|
1979
|
22 |
12 |
p. 1005-1009
5 p.
|
artikel
|
| 5 |
Erratum
|
|
|
1979
|
22 |
12 |
p. 1055-
1 p.
|
artikel
|
| 6 |
Hot photoexcited electrons: Time evolution of the electron temperature in high magnetic fields. Application to InSb
|
Calecki, D.
|
|
1979
|
22 |
12 |
p. 999-1003
5 p.
|
artikel
|
| 7 |
Imperfection levels in chromium- and oxygen-doped GaAs
|
Chang, C.D.
|
|
1979
|
22 |
12 |
p. 1053-1054
2 p.
|
artikel
|
| 8 |
List of contents and author index
|
|
|
1979
|
22 |
12 |
p. i-xii
nvt p.
|
artikel
|
| 9 |
Metal/n-GaP Schottky barrier heights
|
Lei, Tan F.
|
|
1979
|
22 |
12 |
p. 1035-1037
3 p.
|
artikel
|
| 10 |
On the behaviour of buried oxygen implanted layers in highly doped GaAs
|
Beneking, H.
|
|
1979
|
22 |
12 |
p. 1039-1043
5 p.
|
artikel
|
| 11 |
The internal dynamics and small signal analysis of BARITT diodes
|
Razouk, R.R.
|
|
1979
|
22 |
12 |
p. 1011-1015
5 p.
|
artikel
|
| 12 |
The ultimate limits of CCD performance imposed by hot electron effects
|
Hess, Karl
|
|
1979
|
22 |
12 |
p. 1025-1033
9 p.
|
artikel
|
| 13 |
Threshold voltage theory for a short-channel MOSFET using a surface-potential distribution model
|
Ōmura, Y.
|
|
1979
|
22 |
12 |
p. 1045-1051
7 p.
|
artikel
|
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