| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Band structure and photocurrent collection in crystalline and polycrystalline p-n heterojunction solar cells
|
Fonash, Stephen J.
|
|
1979
|
22 |
10 |
p. 907-910
4 p.
|
artikel
|
| 2 |
Boundary conditions at p-n junctions
|
Heasell, E.L.
|
|
1979
|
22 |
10 |
p. 853-856
4 p.
|
artikel
|
| 3 |
Controlled gallium diffusion in silicon by an open-tube system
|
Ghoshtagore, R.N.
|
|
1979
|
22 |
10 |
p. 877-885
9 p.
|
artikel
|
| 4 |
Erratum
|
|
|
1979
|
22 |
10 |
p. 905-906
2 p.
|
artikel
|
| 5 |
Gate current flow in thyristors with partially shorted cathodes—two and three terminal operation
|
Fulop, W.
|
|
1979
|
22 |
10 |
p. 839-847
9 p.
|
artikel
|
| 6 |
Gold traps in 〈100〉 silicon-silicon dioxide interfaces
|
Simmons, J.G.
|
|
1979
|
22 |
10 |
p. 887-892
6 p.
|
artikel
|
| 7 |
Material reactions and barrier height variations in sintered AlInP Schottky diodes
|
Christou, A.
|
|
1979
|
22 |
10 |
p. 857-863
7 p.
|
artikel
|
| 8 |
Nature of 1 f frequency fluctuations in quartz crystal resonators
|
Handel, Peter H.
|
|
1979
|
22 |
10 |
p. 875-876
2 p.
|
artikel
|
| 9 |
Schottky barrier height: A design parameter for device applications
|
Morgan, D.V.
|
|
1979
|
22 |
10 |
p. 865-873
9 p.
|
artikel
|
| 10 |
Statistics of trap photoemission in MIS tunnel diodes
|
Dahlke, Walter E.
|
|
1979
|
22 |
10 |
p. 893-903
11 p.
|
artikel
|
| 11 |
Temperature dependence of open-circuit photovoltage of a back-surface field semiconductor junction
|
Sinha, Amitabha
|
|
1979
|
22 |
10 |
p. 849-852
4 p.
|
artikel
|
| 12 |
The interface between Hg1−x Cd xTe and its native oxide
|
Nemirovsky, Y.
|
|
1979
|
22 |
10 |
p. 831-837
7 p.
|
artikel
|
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