| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An experimental study of the indium antimonide thin film transistor
|
Van Calster, A.
|
|
1979
|
22 |
1 |
p. 77-80
4 p.
|
artikel
|
| 2 |
Capacitance and doping profiles of ion-implanted, buried-channel MOSFETs
|
Lubberts, G.
|
|
1979
|
22 |
1 |
p. 47-54
8 p.
|
artikel
|
| 3 |
Collector thickness evaluation in high voltage multilayer transistors by f t measurements
|
Chiavarotti, G.P.
|
|
1979
|
22 |
1 |
p. 112-113
2 p.
|
artikel
|
| 4 |
Comments on “current-voltage relation in silicon p-n junctions”
|
Buckingham, M.J.
|
|
1979
|
22 |
1 |
p. 116-117
2 p.
|
artikel
|
| 5 |
Computer analysis of punch-through in MOSFETs
|
Kotani, N.
|
|
1979
|
22 |
1 |
p. 63-70
8 p.
|
artikel
|
| 6 |
D.C. characteristics of silicon p-n junctions at avalanche breakdown including selfheating
|
Stepowicz, Witold J.
|
|
1979
|
22 |
1 |
p. 7-13
7 p.
|
artikel
|
| 7 |
Determination of surface state distribution from pulsed MOS capacitor transients
|
Manchanda, Lalita
|
|
1979
|
22 |
1 |
p. 29-32
4 p.
|
artikel
|
| 8 |
Drain noise in MOSFETs at zero drain bias as a function of temperature
|
Takagi, K.
|
|
1979
|
22 |
1 |
p. 87-88
2 p.
|
artikel
|
| 9 |
Editorial Board
|
|
|
1979
|
22 |
1 |
p. IFC-
1 p.
|
artikel
|
| 10 |
Effective exciton-exciton interaction in polar semiconductors
|
Adamowski, Janusz
|
|
1979
|
22 |
1 |
p. 33-35
3 p.
|
artikel
|
| 11 |
Effects of dislocations in silicon transistors with implanted emitters
|
Bull, C.
|
|
1979
|
22 |
1 |
p. 95-104
10 p.
|
artikel
|
| 12 |
Electrical transport properties of PbTe films
|
Dawar, A.L.
|
|
1979
|
22 |
1 |
p. 117-119
3 p.
|
artikel
|
| 13 |
Flicker noise in MOSFETs made by the DMOS process
|
Takagi, K.
|
|
1979
|
22 |
1 |
p. 1-2
2 p.
|
artikel
|
| 14 |
High-efficiency GaAsGa1−x Al xAs single-heterostructure light emitting diodes
|
Lastras-Martínez, A.
|
|
1979
|
22 |
1 |
p. 115-116
2 p.
|
artikel
|
| 15 |
Influence of the depth of interface states into the insulator on the noise properties of MOS transistors
|
Viktorovitch, P.
|
|
1979
|
22 |
1 |
p. 21-23
3 p.
|
artikel
|
| 16 |
Native levels and degradation in GaAs0.6P0.4 LEDs
|
López, C.
|
|
1979
|
22 |
1 |
p. 81-85
5 p.
|
artikel
|
| 17 |
Observations of dislocations and junction irregularities in bipolar transistors using the E.B.I.C. mode of the scanning electron microscope
|
Ashburn, P.
|
|
1979
|
22 |
1 |
p. 105-110
6 p.
|
artikel
|
| 18 |
On the determination of diffusion lengths by means of angle-lapped P-N junctions
|
von Roos, Oldwig
|
|
1979
|
22 |
1 |
p. 113-114
2 p.
|
artikel
|
| 19 |
Optimum bandgap of several III–V heterojunction solar cells
|
Sutherland, J.E.
|
|
1979
|
22 |
1 |
p. 3-5
3 p.
|
artikel
|
| 20 |
Photoconductivity study of semiconductors using the surface acoustic wave convolver
|
Gilboa, H.
|
|
1979
|
22 |
1 |
p. 55-62
8 p.
|
artikel
|
| 21 |
Power gain and noise of InP and GaAs insulated gate microwave FETs
|
Messick, L.
|
|
1979
|
22 |
1 |
p. 71-76
6 p.
|
artikel
|
| 22 |
Recombination beneath ohmic contacts and adjacent oxide covered regions
|
Heasell, E.L.
|
|
1979
|
22 |
1 |
p. 89-93
5 p.
|
artikel
|
| 23 |
Switching properties of highly doped Gunn devices in resistive circuits
|
Reinecker, E.
|
|
1979
|
22 |
1 |
p. 25-27
3 p.
|
artikel
|
| 24 |
Temperature dependence of photovoltaic solar energy conversion for GaAs homojunction solar cell
|
Mathur, P.C.
|
|
1979
|
22 |
1 |
p. 111-112
2 p.
|
artikel
|
| 25 |
Theory of nonequilibrium properties of MIS capacitors including charge exchange of interface states with both bands
|
Kelberlau, U.
|
|
1979
|
22 |
1 |
p. 37-45
9 p.
|
artikel
|
| 26 |
Unified approach to breakdown phenomena in silicon p-n junction
|
Stepowicz, Witold J.
|
|
1979
|
22 |
1 |
p. 15-19
5 p.
|
artikel
|
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