| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Approximate values of the multiplication coefficient in one-sided abrupt junctions
|
Leguerre, R.
|
|
1976
|
19 |
10 |
p. 875-881
7 p.
|
artikel
|
| 2 |
Barrier scattering in polycrystalline thin films of semiconductors
|
Kuznicki, Zbigniew T.
|
|
1976
|
19 |
10 |
p. 894-896
3 p.
|
artikel
|
| 3 |
Functional modelling of non-volatile MOS memory devices
|
Card, H.C.
|
|
1976
|
19 |
10 |
p. 863-870
8 p.
|
artikel
|
| 4 |
Hot electron microwave conductivity of wide bandgap semiconductors
|
Das, P.
|
|
1976
|
19 |
10 |
p. 851-855
5 p.
|
artikel
|
| 5 |
Measurements of bandgap narrowing in Si bipolar transistors
|
Slotboom, J.W.
|
|
1976
|
19 |
10 |
p. 857-862
6 p.
|
artikel
|
| 6 |
Obituary
|
Welker, H.
|
|
1976
|
19 |
10 |
p. 817-818
2 p.
|
artikel
|
| 7 |
On the noise performance of bipolar transistors in untuned amplifiers
|
Das, Mukunda B.
|
|
1976
|
19 |
10 |
p. 827-836
10 p.
|
artikel
|
| 8 |
Polycrystalline silicon solar cells on metallurgical silicon substrates
|
Chu, T.L.
|
|
1976
|
19 |
10 |
p. 837-838
2 p.
|
artikel
|
| 9 |
Relations between IR induced photoconductivity and IR stimulated luminescence in ZnS
|
Enomoto, T.
|
|
1976
|
19 |
10 |
p. 883-890
8 p.
|
artikel
|
| 10 |
Relationships between process-induced defects and channel mobility in most structures
|
Toncheva, L.T.
|
|
1976
|
19 |
10 |
p. 891-892
2 p.
|
artikel
|
| 11 |
Self-passivated GaAs/W mixer diode
|
Linden, Kurt J.
|
|
1976
|
19 |
10 |
p. 843-844
2 p.
|
artikel
|
| 12 |
Silicon carbide light-emitting diodes with epitaxial junctions
|
v. Münch, W.
|
|
1976
|
19 |
10 |
p. 871-874
4 p.
|
artikel
|
| 13 |
Studies of n-type GaAs material properties by anodic current behaviour
|
Colquhoun, Alexander
|
|
1976
|
19 |
10 |
p. 819-826
8 p.
|
artikel
|
| 14 |
Thermal history of sheet resistivity in arsenic implanted silicon
|
Tsuchimoto, Takashi
|
|
1976
|
19 |
10 |
p. 892-IN6
nvt p.
|
artikel
|
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