| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analog neuromorphic computing using programmable resistor arrays
|
Solomon, Paul M.
|
|
2019
|
155 |
C |
p. 82-92
|
artikel
|
| 2 |
Challenges for high performance and very low power operation at the end of the Roadmap
|
Balestra, Francis
|
|
2019
|
155 |
C |
p. 27-31
|
artikel
|
| 3 |
Characteristics of vertically stacked graphene-layer infrared photodetectors
|
Ryzhii, M.
|
|
2019
|
155 |
C |
p. 123-128
|
artikel
|
| 4 |
Editorial Board
|
|
|
2019
|
155 |
C |
p. ii
|
artikel
|
| 5 |
Electronic structure, magnetoexcitons and valley polarized electron gas in 2D crystals
|
Szulakowska, L.
|
|
2019
|
155 |
C |
p. 105-110
|
artikel
|
| 6 |
Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters
|
von den Driesch, Nils
|
|
2019
|
155 |
C |
p. 139-143
|
artikel
|
| 7 |
Exploiting topological matter for Majorana physics and devices
|
Schüffelgen, Peter
|
|
2019
|
155 |
C |
p. 99-104
|
artikel
|
| 8 |
Lithography for now and the future
|
van de Kerkhof, M.A.
|
|
2019
|
155 |
C |
p. 20-26
|
artikel
|
| 9 |
Low voltage operation of GaN vertical nanowire MOSFET
|
Son, D.-H.
|
|
2019
|
155 |
C |
p. 76-81
|
artikel
|
| 10 |
Monitoring large-scale power distribution grids
|
Gavrilov, D.
|
|
2019
|
155 |
C |
p. 57-64
|
artikel
|
| 11 |
NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration
|
Ahopelto, J.
|
|
2019
|
155 |
C |
p. 7-19
|
artikel
|
| 12 |
Nanoelectronics with proximitized materials
|
Žutić, Igor
|
|
2019
|
155 |
C |
p. 93-98
|
artikel
|
| 13 |
Plasmonic modulation and demodulation structure for the future optical WDM devices in communication system
|
Sukharenko, Vitaly
|
|
2019
|
155 |
C |
p. 159-162
|
artikel
|
| 14 |
Possible observation of Berry phase in Aharonov Bohm rings of InGaAs
|
Aharony, A.
|
|
2019
|
155 |
C |
p. 117-122
|
artikel
|
| 15 |
Preface to the FTM-2018 special issue
|
Luryi, S.
|
|
2019
|
155 |
C |
p. 1-3
|
artikel
|
| 16 |
Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C
|
Ledentsov Jr., N.
|
|
2019
|
155 |
C |
p. 150-158
|
artikel
|
| 17 |
Resonant amplification via Er-doped clad Si photonic molecules: Towards compact low-loss/high-Q Si photonic devices
|
Jarschel, P.F.
|
|
2019
|
155 |
C |
p. 144-149
|
artikel
|
| 18 |
Room temperature yellow InGaAlP quantum dot laser
|
Ledentsov, N.N.
|
|
2019
|
155 |
C |
p. 129-138
|
artikel
|
| 19 |
Signatures of induced superconductivity in AlOx-capped topological heterostructures
|
Schüffelgen, Peter
|
|
2019
|
155 |
C |
p. 111-116
|
artikel
|
| 20 |
Sub-terahertz testing of millimeter wave Monolithic and very large scale integrated circuits
|
Shur, M.
|
|
2019
|
155 |
C |
p. 44-48
|
artikel
|
| 21 |
The concept of electrostatic doping and related devices
|
Cristoloveanu, Sorin
|
|
2019
|
155 |
C |
p. 32-43
|
artikel
|
| 22 |
Two-pulse sub-ns switching scheme for advanced spin-orbit torque MRAM
|
Sverdlov, Viktor
|
|
2019
|
155 |
C |
p. 49-56
|
artikel
|
| 23 |
When will we have a quantum computer?
|
Dyakonov, M.I.
|
|
2019
|
155 |
C |
p. 4-6
|
artikel
|
| 24 |
Wide band gap semiconductor technology: State-of-the-art
|
Shur, Michael
|
|
2019
|
155 |
C |
p. 65-75
|
artikel
|
Tijdschrift beschrijving