| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An innovative large scale integration of silicon nanowire-based field effect transistors
|
Legallais, M.
|
|
2018
|
143 |
C |
p. 97-102
|
artikel
|
| 2 |
A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters
|
Cristoloveanu, S.
|
|
2018
|
143 |
C |
p. 10-19
|
artikel
|
| 3 |
Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures
|
Boudier, D.
|
|
2018
|
143 |
C |
p. 27-32
|
artikel
|
| 4 |
Editorial Board
|
|
|
2018
|
143 |
C |
p. ii
|
artikel
|
| 5 |
Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion
|
Cazimajou, T.
|
|
2018
|
143 |
C |
p. 83-89
|
artikel
|
| 6 |
Indium-oxide nanoparticles for RRAM devices compatible with CMOS back-end-off-line
|
León Pérez, Edgar A.A.
|
|
2018
|
143 |
C |
p. 20-26
|
artikel
|
| 7 |
Insight into carrier lifetime impact on band-modulation devices
|
Parihar, Mukta Singh
|
|
2018
|
143 |
C |
p. 41-48
|
artikel
|
| 8 |
Kink effect in ultrathin FDSOI MOSFETs
|
Park, H.J.
|
|
2018
|
143 |
C |
p. 33-40
|
artikel
|
| 9 |
Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs
|
Donetti, L.
|
|
2018
|
143 |
C |
p. 49-55
|
artikel
|
| 10 |
Out-of-equilibrium body potential measurements in pseudo-MOSFET for sensing applications
|
Benea, Licinius
|
|
2018
|
143 |
C |
p. 69-76
|
artikel
|
| 11 |
Preface to the special issue of Solid State Electronics EUROSOI/ULIS 2017
|
Nassiopoulou, Androula G.
|
|
2018
|
143 |
C |
p. 1
|
artikel
|
| 12 |
Second Harmonic Generation characterization of SOI wafers: Impact of layer thickness and interface electric field
|
Damianos, D.
|
|
2018
|
143 |
C |
p. 90-96
|
artikel
|
| 13 |
Silicon tunnel FET with average subthreshold slope of 55 mV/dec at low drain currents
|
Narimani, K.
|
|
2018
|
143 |
C |
p. 62-68
|
artikel
|
| 14 |
Static and low frequency noise characterization of ultra-thin body InAs MOSFETs
|
Karatsori, T.A.
|
|
2018
|
143 |
C |
p. 56-61
|
artikel
|
| 15 |
The prospects of transition metal dichalcogenides for ultimately scaled CMOS
|
Thiele, S.
|
|
2018
|
143 |
C |
p. 2-9
|
artikel
|
| 16 |
Three-dimensional vertical Si nanowire MOS capacitor model structure for the study of electrical versus geometrical Si nanowire characteristics
|
Hourdakis, E.
|
|
2018
|
143 |
C |
p. 77-82
|
artikel
|
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