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                             40 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Advanced error-prediction LDPC with temperature compensation for highly reliable SSDs Tokutomi, Tsukasa
 2015
 111 C p. 129-140
12 p.
 artikel
2 All regimes mobility extraction using split C–V technique enhanced with charge-sheet model Hubert, Q.
 2015
 111 C p. 52-57
6 p.
 artikel
3 A modern perspective on the history of semiconductor nitride blue light sources Maruska, Herbert Paul
 2015
 111 C p. 32-41
10 p.
 artikel
4 Analytical model of drain current of cylindrical surrounding gate p-n-i-n TFET Xu, Wanjie
 2015
 111 C p. 171-179
9 p.
 artikel
5 A new explicit and analytical model for square Gate-All-Around MOSFETs with rounded corners Moreno, E.
 2015
 111 C p. 180-187
8 p.
 artikel
6 An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs Villena, M.A.
 2015
 111 C p. 47-51
5 p.
 artikel
7 Commercially applicable, solution-processed organic TFT and its backplane application in electrophoretic displays Park, Chang Bum
 2015
 111 C p. 227-233
7 p.
 artikel
8 Compact model for short-channel symmetric double-gate junctionless transistors Ávila-Herrera, F.
 2015
 111 C p. 196-203
8 p.
 artikel
9 Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials Hiblot, G.
 2015
 111 C p. 188-195
8 p.
 artikel
10 Conductive filament structure in HfO2 resistive switching memory devices Privitera, S.
 2015
 111 C p. 161-165
5 p.
 artikel
11 Detailed 8-transistor SRAM cell analysis for improved alpha particle radiation hardening in nanometer technologies Bota, Sebastià A.
 2015
 111 C p. 104-110
7 p.
 artikel
12 Determination of active oxide trap density and 1/f noise mechanism in RESURF LDMOS transistors Çelik-Butler, Z.
 2015
 111 C p. 141-146
6 p.
 artikel
13 Dual bipolar resistive switching in the sub-forming regime of HfO2 resistive switching devices Recher, Shani
 2015
 111 C p. 238-242
5 p.
 artikel
14 Dynamic variability in 14nm FD-SOI MOSFETs and transient simulation methodology Theodorou, Christoforos G.
 2015
 111 C p. 100-103
4 p.
 artikel
15 Editorial Board 2015
 111 C p. IFC-
1 p.
 artikel
16 Effect of annealing temperature on the electrical properties of In–Zn–Li–O thin film transistors Li, Bin
 2015
 111 C p. 18-21
4 p.
 artikel
17 Effect of uncertainty principle on the Wigner function-based simulation of quantum transport Kim, Kyoung-Youm
 2015
 111 C p. 22-26
5 p.
 artikel
18 Effects of the optical absorption of a LED chip on the LED package Kim, Ki Hyun
 2015
 111 C p. 166-170
5 p.
 artikel
19 Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors Bak, Jun Yong
 2015
 111 C p. 153-160
8 p.
 artikel
20 Efficiency analysis of betavoltaic elements Sachenko, A.V.
 2015
 111 C p. 147-152
6 p.
 artikel
21 Engineering of chalcogenide materials for embedded applications of Phase Change Memory Zuliani, Paola
 2015
 111 C p. 27-31
5 p.
 artikel
22 Extraction and modeling of layout-dependent MOSFET gate-to-source/drain fringing capacitance in 40nm technology Sun, Lijie
 2015
 111 C p. 118-122
5 p.
 artikel
23 Fabrication and characterization of sub-micron In0.53Ga0.47As p-i-n diodes Gaur, Abhinav
 2015
 111 C p. 234-237
4 p.
 artikel
24 Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction Karatsori, T.A.
 2015
 111 C p. 123-128
6 p.
 artikel
25 High-power UV-LED degradation: Continuous and cycled working condition influence Arques-Orobon, F.J.
 2015
 111 C p. 111-117
7 p.
 artikel
26 Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors Mizubayashi, W.
 2015
 111 C p. 62-66
5 p.
 artikel
27 Integration of GMR-based spin torque oscillators and CMOS circuitry Chen, Tingsu
 2015
 111 C p. 91-99
9 p.
 artikel
28 Investigation of the width-dependent static characteristics of graphene nanoribbon field effect transistors using non-parabolic quantum-based model Banadaki, Yaser M.
 2015
 111 C p. 80-90
11 p.
 artikel
29 Loss mechanisms influence on Cu2ZnSnS4/CdS-based thin film solar cell performance Courel, Maykel
 2015
 111 C p. 243-250
8 p.
 artikel
30 Low power low temperature poly-Si thin-film transistor shift register with DC-type output driver Song, Seok-Jeong
 2015
 111 C p. 204-209
6 p.
 artikel
31 Low temperature fabrication of high performance ZnO thin film transistors with high-k dielectrics Walker, Brandon
 2015
 111 C p. 58-61
4 p.
 artikel
32 Multilevel metal/Pb(Zr0.52Ti0.48)O3/TiO x N y /Si for next generation FeRAM technology node Sharma, Deepak K.
 2015
 111 C p. 42-46
5 p.
 artikel
33 On the extraction of the external drain and source resistors and effective channel length in Si-MOSFET Joodaki, M.
 2015
 111 C p. 1-6
6 p.
 artikel
34 Response of plasmonic terahertz detectors to amplitude modulated signals Rupper, Greg
 2015
 111 C p. 76-79
4 p.
 artikel
35 Scaling and carrier transport behavior of buried-channel In0.7Ga0.3As MOSFETs with Al2O3 insulator Kim, Taewoo
 2015
 111 C p. 218-222
5 p.
 artikel
36 Self-aligned two-layer metallization with low series resistance for litho-less contacting of large-area photodiodes Mok, K.R.C.
 2015
 111 C p. 210-217
8 p.
 artikel
37 Short channel amorphous In–Ga–Zn–O thin-film transistor arrays for ultra-high definition active matrix liquid crystal displays: Electrical properties and stability Kim, Soo Chang
 2015
 111 C p. 67-75
9 p.
 artikel
38 Surface treatment to improve responsivity of MgZnO UV detectors Zhao, Yajun
 2015
 111 C p. 223-226
4 p.
 artikel
39 Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts Taube, Andrzej
 2015
 111 C p. 12-17
6 p.
 artikel
40 Using dual plasma treatment to improve electrical characteristics and reduce flicker noise of high-κ HfO2 LTPS-TFTs Chang, Kow-Ming
 2015
 111 C p. 7-11
5 p.
 artikel
                             40 gevonden resultaten
 
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