| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A compact drain current model for heterostructure HEMTs including 2DEG density solution with two subbands
|
Deng, Wanling
|
|
2016
|
|
PA |
p. 54-59
6 p.
|
artikel
|
| 2 |
A high dynamic range power sensor based on GaAs MMIC process and MEMS technology
|
Yi, Zhenxiang
|
|
2016
|
|
PA |
p. 39-46
8 p.
|
artikel
|
| 3 |
Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs
|
Agarwal, Harshit
|
|
2016
|
|
PA |
p. 33-38
6 p.
|
artikel
|
| 4 |
Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device
|
Xu, Qiuxia
|
|
2016
|
|
PA |
p. 26-32
7 p.
|
artikel
|
| 5 |
Ballistic modeling of InAs nanowire transistors
|
Jansson, Kristofer
|
|
2016
|
|
PA |
p. 47-53
7 p.
|
artikel
|
| 6 |
Editorial Board
|
|
|
2016
|
|
PA |
p. IFC-
1 p.
|
artikel
|
| 7 |
Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition
|
Dwivedi, A.D.D.
|
|
2016
|
|
PA |
p. 1-6
6 p.
|
artikel
|
| 8 |
Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays
|
Grossi, Alessandro
|
|
2016
|
|
PA |
p. 17-25
9 p.
|
artikel
|
| 9 |
Investigation of low-frequency noise of 28-nm technology process of high-k/metal gate p-MOSFETs with fluorine incorporation
|
Kao, Tsung-Hsien
|
|
2016
|
|
PA |
p. 7-11
5 p.
|
artikel
|
| 10 |
Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism
|
Sahoo, A.K.
|
|
2016
|
|
PA |
p. 12-16
5 p.
|
artikel
|
| 11 |
Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate
|
Du, Jiangfeng
|
|
2016
|
|
PA |
p. 60-64
5 p.
|
artikel
|
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