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                             186 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Above barrier exciton confinement in InGaAs/GaAs multiple-quantum-well structures Capizzi, M.
 1994
 4-6 p. 641-644
4 p.
 artikel
2 Advantages of a piezoelectric field in a quantum well Ekenberg, U.
 1994
 4-6 p. 661-664
4 p.
 artikel
3 Alternate method to produce quantum wires using dislocation slipping Guasch, C.
 1994
 4-6 p. 567-569
3 p.
 artikel
4 A metastable state in self-electro-optic effect devices using Stark ladder transitions Hosoda, M.
 1994
 4-6 p. 847-850
4 p.
 artikel
5 A new technique for directly probing the intrinsic tristability and its temperature dependence in a resonant tunneling diode Lerch, M.L.F.
 1994
 4-6 p. 961-964
4 p.
 artikel
6 Band discontinuity and effects of Si-insertion layer at (311)A GaAs/AlAs interface Saito, T.
 1994
 4-6 p. 743-745
3 p.
 artikel
7 Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100) Nayak, D.K.
 1994
 4-6 p. 933-936
4 p.
 artikel
8 Band offsets and electronic structures of (ZnCdHg)(SSeTe) strained superlattices Nakayama, Takashi
 1994
 4-6 p. 1077-1080
4 p.
 artikel
9 Binding energies of D − ion in GaAs quantum well Chang, Y.H.
 1994
 4-6 p. 673-675
3 p.
 artikel
10 Bistability effect in laser-transistor resonant-tunneling structure Ryzhii, V.
 1994
 4-6 p. 1259-1262
4 p.
 artikel
11 Capture and emission of electrons in quantum wells under applied electric field Vinter, B.
 1994
 4-6 p. 773-777
5 p.
 artikel
12 Characterization of the valence band offset in p-Si/Si1−x Ge x/Si by space charge spectroscopy Schmalz, K.
 1994
 4-6 p. 945-948
4 p.
 artikel
13 Charge transfer and electroabsorption in an electric field tunable double quantum well structure Bernhard, K.
 1994
 4-6 p. 1307-1310
4 p.
 artikel
14 Comparison of far-infrared- and DC-conductivity of electron systems laterally patterned by low-energy ion beam exposure Lettau, C.
 1994
 4-6 p. 1207-1210
4 p.
 artikel
15 Constructive superposition of field- and carrier induced absorption changes in hetero-n-i-p-i structures Kneissl, M.
 1994
 4-6 p. 1251-1253
3 p.
 artikel
16 Correlation effects in magnetoluminescence spectra from dense quasi-2D electron gas in selectively doped InGaAs/GaAs quantum wells Kulakovskii, V.D.
 1994
 4-6 p. 725-728
4 p.
 artikel
17 Correlations of the remote impurity charges—A method of 2DEG mobility tuning in GaAs/AlGaAs heterostructures Suski, T.
 1994
 4-6 p. 677-680
4 p.
 artikel
18 Coulomb attraction in optical spectra of quantum discs Adolph, B.
 1994
 4-6 p. 1149-1152
4 p.
 artikel
19 Coverage dependence of migration potential of cation adatoms on GaAs(001)-(2 × 4) surface Shiraishi, Kenji
 1994
 4-6 p. 601-604
4 p.
 artikel
20 Cross-sectional STM on superlattices and the effect of doping Salemink, H.W.M.
 1994
 4-6 p. 1053-1056
4 p.
 artikel
21 Cyclotron and intersubband resonance studies in [001] and piezoelectric [111] InAs/(Ga,In)Sb superlattices Lakrimi, M.
 1994
 4-6 p. 1227-1230
4 p.
 artikel
22 Cyclotron FIR emission from hot electrons in GaAsGaAlAs heterostructures Zawadzki, W.
 1994
 4-6 p. 1213-1216
4 p.
 artikel
23 D.C. transport in intense, in-plane terahertz electric fields in Al x Ga1−x As heterostructures at 300 K Asmar, N.G.
 1994
 4-6 p. 693-695
3 p.
 artikel
24 Detection of Bloch oscillations in a semiconductor superlattice by time-resolved terahertz spectroscopy and degenerate four-wave mixing Waschke, Christian
 1994
 4-6 p. 1321-1326
6 p.
 artikel
25 Determination of band-edge offset by weak field Hall measurement on MBE PbSe/PbEuSe multi-quantum well structures on KCl Shi, Z.
 1994
 4-6 p. 1113-1116
4 p.
 artikel
26 Determination of built-in electric fields in delta-doped GaAs structures by phase-sensitive photoreflectance Alperovich, V.L.
 1994
 4-6 p. 657-660
4 p.
 artikel
27 Determination of the basic parameters of pseudomorphic GaInAs quantum wells by means of simultaneous transport and optical investigations Litwin-Staszewska, E.
 1994
 4-6 p. 665-667
3 p.
 artikel
28 Dimensional transition of weak localization effects in lateral surface superlattices Selbmann, P.E.
 1994
 4-6 p. 717-720
4 p.
 artikel
29 Direct epitaxial growth of (AlGa)As/GaAs quantum wires by orientation-dependent metalorganic vapour phase epitaxy Bertram, D.
 1994
 4-6 p. 591-596
6 p.
 artikel
30 Direct observation of the semimetal to semiconductor transition in crossed band gap superlattices at magnetic fields of up to 150 T Barnes, D.J.
 1994
 4-6 p. 1027-1030
4 p.
 artikel
31 Disorder-induced Raman scattering of folded phonons in quantum wells and superlattices Ruf, T.
 1994
 4-6 p. 609-612
4 p.
 artikel
32 Domain formation in modulation-doped GaAs/Al x Ga1−x As heterostructures Döttling, R.
 1994
 4-6 p. 685-688
4 p.
 artikel
33 Electromodulation spectroscopy study of a GaAs/GaAlAs asymmetric triangular quamtum well structure Qiang, H.
 1994
 4-6 p. 893-897
5 p.
 artikel
34 Electron heating in doped GaAs—Is it directional? Brill, B.
 1994
 4-6 p. 543-546
4 p.
 artikel
35 Electronic interactions at superconductor-semiconductor interfaces Kroemer, Herbert
 1994
 4-6 p. 1021-1025
5 p.
 artikel
36 Electronic properties and electron-phonon interaction in an array of anisotropic parabolic quantum dots in the presence of a magnetic field Haupt, R.
 1994
 4-6 p. 1153-1157
5 p.
 artikel
37 Electronic structure of thin Si layers in CaF2: Hybridization versus confinement Fasolino, A.
 1994
 4-6 p. 1145-1147
3 p.
 artikel
38 Electron-phonon scattering rates in quantum wires Knipp, P.A.
 1994
 4-6 p. 1105-1108
4 p.
 artikel
39 Electron subband structure of HgCdTe metal-insulator-semiconductor heterostructures Chu, Junhao
 1994
 4-6 p. 1125-1128
4 p.
 artikel
40 Electron transport in InAs/Ga1-x In xSb superlattices Hoffman, C.A.
 1994
 4-6 p. 1203-1206
4 p.
 artikel
41 Enhancement of free-to-bound transitions due to resonant electron capture in Be-doped AlGaAs/GaAs quantum wells Muraki, K.
 1994
 4-6 p. 1247-1250
4 p.
 artikel
42 Evidence of non-commutativity of band discontinuities in InP-Al(In)As-Ga(In)As heterostructures Lugagne-Delpon, E.
 1994
 4-6 p. 635-639
5 p.
 artikel
43 Excitonic enhancement of the Fermi edge singularity and recombination kinetics of photogenerated electrons in p-type δ-doped GaAs:Be/Al x Ga1−xAs double-heterostructures Wagner, J.
 1994
 4-6 p. 871-875
5 p.
 artikel
44 Experimental studies of electronic transport in semiconductor quantum dot structures Bird, J.P.
 1994
 4-6 p. 709-712
4 p.
 artikel
45 Fabrication of nanometer-scale conducting silicon wires with a scanning tunneling microscope Campbell, P.M.
 1994
 4-6 p. 583-586
4 p.
 artikel
46 Fabrication of quantum wires and dots by MOCVD selective growth Arakawa, Yasuhiko
 1994
 4-6 p. 523-528
6 p.
 artikel
47 Fabrication of SiGe/Si quantum wire structures on a V-groove patterned Si substrate by gas-source Si molecular beam epitaxy Usami, N.
 1994
 4-6 p. 539-541
3 p.
 artikel
48 Far-infrared response of quantum dots: From few electron excitations to magnetoplasmons Pfannkuche, D.
 1994
 4-6 p. 1221-1226
6 p.
 artikel
49 Feasibility of room-temperature operation of tunable coupled-quantum-well lasers Ogawa, M.
 1994
 4-6 p. 1315-1319
5 p.
 artikel
50 Femtosecond degenerate four-wave-mixing on unstrained (InGa)As/InP multiple-quantum-wells using an optical parametric oscillator Albrecht, T.F.
 1994
 4-6 p. 1327-1331
5 p.
 artikel
51 Fermi edge singularities in doped quantum wires and quantum wells Rodríguez, F.J.
 1994
 4-6 p. 867-869
3 p.
 artikel
52 Fermi sea shake-up in quantum well luminescence spectra Skolnick, M.S.
 1994
 4-6 p. 825-829
5 p.
 artikel
53 Folded acoustic phonons in GaAs/AlAs superlattices grown on non-(100)-oriented surfaces Spitzer, J.
 1994
 4-6 p. 753-756
4 p.
 artikel
54 Formation of N-AlGaAs/GaAs edge quantum wire on (111)B micro facet by MBE and magnetic depopulation of quasi-one-dimensional electron gas Nakamura, Y.
 1994
 4-6 p. 571-573
3 p.
 artikel
55 Free to bound exciton relaxation in [001] and [111] GaAs/GaAlAs quantum wells Muñoz, L.
 1994
 4-6 p. 877-880
4 p.
 artikel
56 FTIR spectroscopy of longitudinal confined phonons and plasmon-phonon vibrational modes in GaAs n /AlAs m superlattices Pusep, Yu.A.
 1994
 4-6 p. 613-616
4 p.
 artikel
57 GaAsAlAs and SiSiGe quantum well structures for applications in nonlinear optics Shaw, M.J.
 1994
 4-6 p. 1303-1306
4 p.
 artikel
58 GaAs/AlGaAs quantum well infrared photodetectors Miyatake, T.
 1994
 4-6 p. 1187-1190
4 p.
 artikel
59 Giant temperature resonances of noise in submicron quantum well structures Stoddart, S.T.
 1994
 4-6 p. 1011-1014
4 p.
 artikel
60 Giant third-order nonlinear susceptibilities for in-plane far-infrared excitation of single InAs quantum wells Markelz, A.G.
 1994
 4-6 p. 1243-1245
3 p.
 artikel
61 Ground state properties of interacting electrons in semiconductor quantum dots: Exact and unrestricted hartree-fock results Martín-Moreno, L.
 1994
 4-6 p. 1179-1182
4 p.
 artikel
62 High magnetic field effects on the dynamics of excitons in a GaAs quantum well Haacke, S.
 1994
 4-6 p. 923-928
6 p.
 artikel
63 High mobility 2-D hole gases in strained Ge channels on Si substrates studied by magnetotransport and cyclotron resonance Engelhardt, C.M.
 1994
 4-6 p. 949-952
4 p.
 artikel
64 High-mobility transport along single quasi-1D quantum wires formed by cleaved edge overgrowth Wegscheider, W.
 1994
 4-6 p. 547-550
4 p.
 artikel
65 High-resolution transmission electron microscopy of heterostructures Cerva, H.
 1994
 4-6 p. 1045-1052
8 p.
 artikel
66 Hydrostatic pressure sensors based on solid state tunneling devices Brugger, H.
 1994
 4-6 p. 801-804
4 p.
 artikel
67 InAs/antimonide-based resonant tunneling structures with ternary alloy layers Schulman, J.N.
 1994
 4-6 p. 981-985
5 p.
 artikel
68 Inelastic light scattering by electrons in GaAs quantum wires: Spin-density, charge-density and single-particle excitations Schmeller, A.
 1994
 4-6 p. 1281-1284
4 p.
 artikel
69 Infrared reflectivity of strained GaSb/AlSb superlattices Scamarcio, G.
 1994
 4-6 p. 625-628
4 p.
 artikel
70 Infrared spectroscopy of lateral-density-modulated 2DES in InAs/AlSb quantum wells Sundaram, M.
 1994
 4-6 p. 1293-1295
3 p.
 artikel
71 InGaAs/InP quantum wells with periodic thickness variation Bernussi, A.A.
 1994
 4-6 p. 653-656
4 p.
 artikel
72 Inside a 2D electron system: Images of potential and dissipation Knott, R.
 1994
 4-6 p. 689-692
4 p.
 artikel
73 Interactions between Wannier-Stark states Ferreira, R.
 1994
 4-6 p. 857-861
5 p.
 artikel
74 Interface composition control in InAs/GaSb superlattices Bennett, B.R.
 1994
 4-6 p. 733-737
5 p.
 artikel
75 Interface effects, band overlap and the semimetal to semiconductor transition in InAs/GaSb interband resonant tunnelling diodes Khan-Cheema, U.M.
 1994
 4-6 p. 977-979
3 p.
 artikel
76 Intersubband lifetime in quantum wells with transition energies above and below the optical phonon energy Faist, Jerome
 1994
 4-6 p. 1273-1276
4 p.
 artikel
77 Landau levels of bragg confined electrons and holes Zahler, M.
 1994
 4-6 p. 1195-1197
3 p.
 artikel
78 Lateral piezoelectric fields—a universal feature of strained III–V and II–VI semiconductor heterostructures Ilg, Matthias
 1994
 4-6 p. 739-742
4 p.
 artikel
79 Lateral potential modulation in InAs/AlSb quantum wells by wet etching Utzmeier, T.
 1994
 4-6 p. 575-578
4 p.
 artikel
80 Light induced inversion of magnetic hysteresis in CdTe/(Cd,Mn)Te superlattices Kochereskho, V.P.
 1994
 4-6 p. 1081-1085
5 p.
 artikel
81 Long lived photoexcited electron-hole pairs in modulation doped GaAs/AlGaAs quantum wells studied by intersubband spectroscopy Garini, Y.
 1994
 4-6 p. 1199-1202
4 p.
 artikel
82 Luminescence investigation on strained Si1−x Ge x/Si modulated quantum wells Fukatsu, S.
 1994
 4-6 p. 817-823
7 p.
 artikel
83 Luminescence studies of resonant tunneling in a triple barrier structure with strongly coupled quantum wells Turner, T.S.
 1994
 4-6 p. 721-724
4 p.
 artikel
84 Luminescence up-conversion by auger process at InP-AlInAs type II interfaces Titkov, A.
 1994
 4-6 p. 1041-1044
4 p.
 artikel
85 Magnetic field tuned transition of Aharonov-Bohm oscillations from hc/e to hc/2e periodicity in the array of AlGaAs/GaAs rings Gusev, G.M.
 1994
 4-6 p. 1231-1234
4 p.
 artikel
86 Magneto-optics of dense electron plasmas in modulation-doped GaInAs/AlInAs single quantum wells Zhang, Y.-H.
 1994
 4-6 p. 919-922
4 p.
 artikel
87 Magnetotransport and microwave photoresistivity of two-dimensional hole gases in Si-Si1−x Ge x heterostructures Guldner, Y.
 1994
 4-6 p. 953-956
4 p.
 artikel
88 Magnetotransport properties of MBE-grown magnetic superlattices of Mn-based intermetallics on GaAs heterostructures Tanaka, M.
 1994
 4-6 p. 1031-1036
6 p.
 artikel
89 MBE fabrication of GaAs quantum wire structures on mesa stripes along the [001] direction López, M.
 1994
 4-6 p. 563-565
3 p.
 artikel
90 MBE growth of GaAs nanometer-scale ridge quantum wire structures and their structural and optical characterizations Koshiba, S.
 1994
 4-6 p. 729-732
4 p.
 artikel
91 Mesoscopic effects in resonant tunnelling diodes Sakai, J.W.
 1994
 4-6 p. 965-968
4 p.
 artikel
92 Microdisk lasers Levi, A.F.J.
 1994
 4-6 p. 1297-1302
6 p.
 artikel
93 Microwave miniband NDC in GaInAs/AlInAs superlattices Palmier, J.F.
 1994
 4-6 p. 697-700
4 p.
 artikel
94 Miniband dispersion, critical points, and impurity bands in superlattices: An infrared absorption study Helm, M.
 1994
 4-6 p. 1277-1280
4 p.
 artikel
95 Miniband formation in graded-gap superlattices Grahn, H.T.
 1994
 4-6 p. 835-838
4 p.
 artikel
96 Modulated blue shift of the quantum well electroluminescence in a GaAs/AlAs superlattice resonant tunnelling device Kuhn, O.
 1994
 4-6 p. 843-846
4 p.
 artikel
97 Modulation of Wannier-Stark transitions by miniband Franz-Keldysh oscillations in strongly coupled GaAs-AlAs superlattices Schmidt, K.H.
 1994
 4-6 p. 1337-1340
4 p.
 artikel
98 Monte-Carlo calculation of few-electron systems in quantum dots Bolton, F.
 1994
 4-6 p. 1159-1162
4 p.
 artikel
99 Multi-phonon relaxation of electrons in a semiconductor quantum dot Inoshita, T.
 1994
 4-6 p. 1175-1178
4 p.
 artikel
100 Negative conductance at THz frequencies in multi-well structures Truscott, W.S.
 1994
 4-6 p. 1235-1238
4 p.
 artikel
101 New optical absorption and photocurrent reversal phenomena induced by localized continuum resonances in quantum well heterostructures Sirtori, Carlo
 1994
 4-6 p. 1191-1194
4 p.
 artikel
102 Non-linear transport properties of miniband conduction in the presence of crossed electric and magnetic fields: A semi-classical approach Aristone, F.
 1994
 4-6 p. 1015-1019
5 p.
 artikel
103 Novel magnetic phase transition behavior in short period EuTe/PbTe superlattice Chen, J.J.
 1994
 4-6 p. 1073-1076
4 p.
 artikel
104 Novel tunable far infrared detector based on a quantum ballistic channel Fedichkin, L.
 1994
 4-6 p. 1211-1212
2 p.
 artikel
105 Observation by spin-resolved resonant magnetotunneling of oscillatory Landé factor in two-dimensional electron systems Mendez, E.E.
 1994
 4-6 p. 779-782
4 p.
 artikel
106 Observation of Knudsen and Gurzhi transport regimes in a two-dimensional wire Molenkamp, L.W.
 1994
 4-6 p. 551-553
3 p.
 artikel
107 On the two- and three-dimensional character of the absorption spectra of Si/Ge superlattices Polatoglou, H.M.
 1994
 4-6 p. 937-940
4 p.
 artikel
108 Optical characterization of InGaAs/GaAs quantum dots defined by lateral top barrier modulation Schmidt, A.
 1994
 4-6 p. 1101-1103
3 p.
 artikel
109 Optical investigation of superlattice orbits and impurity states in InGaAs/GaAs Warburton, R.J.
 1994
 4-6 p. 831-834
4 p.
 artikel
110 Optically detected magnetic resonance study of the transition from pseudodirect type-II to type-I GaAs/AlAs superlattices Romanov, N.G.
 1994
 4-6 p. 911-914
4 p.
 artikel
111 Optical phonon probes of the lateral scale of interface roughness: A theoretical investigation de Gironcoli, S.
 1994
 4-6 p. 621-624
4 p.
 artikel
112 Optical properties of A1P-GaP short-period superlattices Morii, Akio
 1994
 4-6 p. 649-652
4 p.
 artikel
113 Optical properties of etched GaAs/GaAlAs quantum wires and dots Marzin, J.Y.
 1994
 4-6 p. 1091-1096
6 p.
 artikel
114 Optical properties of GaAs/Al0.3Ga0.7As T-shaped quantum well structure fabricated by glancing angle molecular beam epitaxy on GaAs (100) patterned substrates Shimomura, S.
 1994
 4-6 p. 597-600
4 p.
 artikel
115 Optical properties of GaAs quantum dots fabricated by MOCVD selective growth Nagamune, Y.
 1994
 4-6 p. 579-581
3 p.
 artikel
116 Optical properties of pseudomorphic (Si) n /(Ge)10−n superlattices Tserbak, C.
 1994
 4-6 p. 929-931
3 p.
 artikel
117 Optical properties of symmetrically strained (GaIn)As/Ga(PAs) superlattices grown by metalorganic vapour phase epitaxy Lutgen, S.
 1994
 4-6 p. 905-909
5 p.
 artikel
118 Optical transitions in GaAs/AlAs superlattices with different miniband widths Fujiwara, K.
 1994
 4-6 p. 889-892
4 p.
 artikel
119 Optoelectronic properties of (001) and (111) lattice-matched and strained quantum wire lasers—comparison with quantum well lasers Vurgaftman, Igor
 1994
 4-6 p. 1263-1267
5 p.
 artikel
120 Organising committee, program committee, advisory committee, sponsors 1994
 4-6 p. xix-
1 p.
 artikel
121 PbSrS MQW lasers and the effect of quantum well on operation temperature Ishida, A.
 1994
 4-6 p. 1141-1144
4 p.
 artikel
122 Perpendicular transport through rough interfaces in the metallic regime Brataas, Arne
 1994
 4-6 p. 1239-1242
4 p.
 artikel
123 Phonons and electron-phonon interaction in GaAs quantum wires Rossi, F.
 1994
 4-6 p. 761-764
4 p.
 artikel
124 Photohole-induced resonant tunneling of electrons in selectively etched small area GaAs/AlAs double barrier diodes Buhmann, H.
 1994
 4-6 p. 973-976
4 p.
 artikel
125 Photoluminescence and magnetotransport of 2-D hole gases in Si/SiGe/Si heterostructures Apetz, R.
 1994
 4-6 p. 957-959
3 p.
 artikel
126 Photomodulation spectroscopy and cyclotron resonance of Cd1−x Mn xTe/CdTe semimagnetic and strained multi-quantum well structures Shen, S.C.
 1994
 4-6 p. 1087-1090
4 p.
 artikel
127 Photomodulation spectroscopy of narrow minibands in the continuum of multi quantum wells Oiknine-Schlesinger, J.
 1994
 4-6 p. 1269-1272
4 p.
 artikel
128 Photonic bandgap of two-dimensional dielectric crystals Gerard, J.M.
 1994
 4-6 p. 1341-1344
4 p.
 artikel
129 Photovoltaic effect in quasiballistic electron interferometer Bykov, A.A.
 1994
 4-6 p. 713-715
3 p.
 artikel
130 Polarization of the spontaneous radiation of stressed laser heterostructures Ptashchenko, A.A.
 1994
 4-6 p. 1255-1258
4 p.
 artikel
131 Polarization spectroscopy of modulated GaAs/GaAlAs quantum wells grown on vicinal surfaces: Anisotropic islands or ordered growth? Bloch, J.
 1994
 4-6 p. 529-533
5 p.
 artikel
132 Preface 1994
 4-6 p. xvii-
1 p.
 artikel
133 Preparation of low dimensional structures by molecular beam epitaxy-regrowth on patterned AlGaAs buffer layers Eberl, K.
 1994
 4-6 p. 535-538
4 p.
 artikel
134 Pressure dependence of photoluminescence in In x Ga1 − x As/Al yGa1 − yAs strained quantum wells with different widths Liu, Zhen-Xian
 1994
 4-6 p. 885-888
4 p.
 artikel
135 Quantitative analysis of strain relaxation and mosaicity in short period Si m Ge n superlattices using reciprocal space mapping by X-ray diffraction Koppensteiner, E.
 1994
 4-6 p. 629-634
6 p.
 artikel
136 Quantized conductance and its effects on non-linear current-voltage characteristics at 80 K in mesa-etched InAs/AlGaSb quantum wires with split-gate Yoh, Kanji
 1994
 4-6 p. 555-558
4 p.
 artikel
137 Quasi-one-dimensional ballistic electron transport in in-plane-gated channels at liquid nitrogen temperature de Vries, D.K.
 1994
 4-6 p. 701-703
3 p.
 artikel
138 Quasi one-dimensional in-plane-gate field-effect-transistor Meiners, U.
 1994
 4-6 p. 1001-1004
4 p.
 artikel
139 Radiative recombination in pseudomorphic InGaAs/GaAs quantum wires grown on nonplanar substrates Grundmann, M.
 1994
 4-6 p. 1097-1100
4 p.
 artikel
140 Raman scattering investigation on the ordered incorporation of Si dopant atoms on GaAs(001) vicinal surfaces during MBE growth Ramsteiner, M.
 1994
 4-6 p. 605-608
4 p.
 artikel
141 Raman scattering study of longitudinal acoustic and optic phonons in InSb/In1 − x Al xSb strained-layer superlattices Gnezdilov, V.P.
 1994
 4-6 p. 617-620
4 p.
 artikel
142 Realization of a novel resonant-tunneling hot-electron transistor: Competition of ultrafast resonant-tunneling and energy relaxation Yang, C.H.
 1994
 4-6 p. 805-807
3 p.
 artikel
143 Reflection of ballistic electrons by diffusive two-dimensional contacts Geim, A.K.
 1994
 4-6 p. 1005-1009
5 p.
 artikel
144 Relaxation and radiative decay of excitons in GaAs quantum dots Bockelmann, U.
 1994
 4-6 p. 1109-1112
4 p.
 artikel
145 Resonant coupling between buried single-quantum-well and Wannier-Stark-localization states in a GaAs/AlAs superlattice Tanaka, I.
 1994
 4-6 p. 863-866
4 p.
 artikel
146 Resonant magneto-polarons in strongly-coupled superlattices Peeters, F.M.
 1994
 4-6 p. 1217-1220
4 p.
 artikel
147 Resonant quenching of exciton photoluminescence in coupled GaAs/AlAs quantum wells: Effect of exciton binding energy Schneider, Harald
 1994
 4-6 p. 881-884
4 p.
 artikel
148 Schottky-barrier tunneling spectroscopy of a 2-D electron system in delta-doped Si(100) layers Lindolf, J.
 1994
 4-6 p. 969-972
4 p.
 artikel
149 Selective growth of SiGe nanostructures by low pressure VPE Schmidt, G.
 1994
 4-6 p. 587-589
3 p.
 artikel
150 Single-electron transistors realized in in-plane-gate and top-gate technology Haug, R.J.
 1994
 4-6 p. 995-999
5 p.
 artikel
151 Single-electron tunneling and Coulomb charging effects in ultrasmall double-barrier heterostructures Tewordt, M.
 1994
 4-6 p. 793-799
7 p.
 artikel
152 Size effects in the transport properties of thin Sc1−x Er xAs epitaxial layers buried in GaAs Bogaerts, R.
 1994
 4-6 p. 789-792
4 p.
 artikel
153 Spectral luminescence enhancement in three-dimensional optical microcavities formed by GaAs microcrystals Juen, S.
 1994
 4-6 p. 1163-1166
4 p.
 artikel
154 Spectroscopic studies of ultra-thin quantum-wells of GaAs and GaInAs in InP grown by MOVPE Hessman, D.
 1994
 4-6 p. 899-904
6 p.
 artikel
155 Spectroscopic study of piezo-electric field effects in InGaAs/GaAs multi-quantum wells grown on (111)B oriented GaAs substrates Fisher, T.A.
 1994
 4-6 p. 645-648
4 p.
 artikel
156 “Spin”-flip of holes in asymmetric quantum wells Ferreira, R.
 1994
 4-6 p. 851-855
5 p.
 artikel
157 Stark-ladder transitions in GaAs/AlGaAs superlattices Yamaguchi, M.
 1994
 4-6 p. 839-842
4 p.
 artikel
158 Static and dynamical properties of the bound magnetic polaron in CdTe/Cd1-x Mn x Te quantum wells Boudinet, P.
 1994
 4-6 p. 1117-1120
4 p.
 artikel
159 Strain, confinement, carrier dynamics and high density effects in ZnSe/ZnMnSe-quantum structures Kreller, F.
 1994
 4-6 p. 1137-1139
3 p.
 artikel
160 Strained InAs/Ga0.47In0.53As quantum-well heterostructures grown by molecular-beam epitaxy for long-wavelength laser applications Tournié, Eric
 1994
 4-6 p. 1311-1314
4 p.
 artikel
161 Strained Si/SiGe heterostructures for device applications Schäffler, F.
 1994
 4-6 p. 765-771
7 p.
 artikel
162 Strong lateral quantization effects in the luminescence of InGaAs/InP quantum wires Ils, P.
 1994
 4-6 p. 1183-1186
4 p.
 artikel
163 Studies of GaSb-capped InAs/AlSb quantum wells by resonant raman scattering Wagner, J.
 1994
 4-6 p. 1037-1040
4 p.
 artikel
164 Systematic study of intersubband absorption in modulation-doped p-typeSi/Si1−x Ge x quantum wells Fromherz, T.
 1994
 4-6 p. 941-944
4 p.
 artikel
165 Tailoring of the carrier capture efficiency of a quantum well Gerard, J.M.
 1994
 4-6 p. 1167-1170
4 p.
 artikel
166 The conduction band spin splitting in type-I strained and unstrained (GaIn)As/InP quantum wells Omling, P.
 1994
 4-6 p. 669-672
4 p.
 artikel
167 The dependence of boundary scattering in split-gate quantum wires on the transverse mode number Yamamoto, M.
 1994
 4-6 p. 705-707
3 p.
 artikel
168 Theoretical analysis of resonant magnetotunneling spectroscopy of holes Goldoni, G.
 1994
 4-6 p. 991-993
3 p.
 artikel
169 Thermally desactivated resonant current in high peak to valley current ratio (69:1) GaAs/GaAlAs resonant tunneling structures: A spectroscopic view of the emitter density of state Laruelle, F.
 1994
 4-6 p. 987-990
4 p.
 artikel
170 The surface evolution and kinetic roughening during homoepitaxy of GaAs (001) Orr, B.G.
 1994
 4-6 p. 1057-1063
7 p.
 artikel
171 Three-dimensional boltzmann-bloch theory of miniband transport in superlattices with elastic scattering Gerhardts, Rolf R.
 1994
 4-6 p. 681-684
4 p.
 artikel
172 Time resolved optical study of vertical transport in Cd0.82Mn0.18Te/CdTe superlattices Roussignol, Ph.
 1994
 4-6 p. 1121-1124
4 p.
 artikel
173 Time-resolved photoluminescence studies of stimulated emission and exciton dynamics in ZnSe/ZnS0.18Se0.82 superlattices Stevens, C.J.
 1994
 4-6 p. 1133-1136
4 p.
 artikel
174 Time resolved spectroscopy of electron decay in coupled quantum wells—observation of relaxation induced slow-down Bar-Joseph, I.
 1994
 4-6 p. 1333-1336
4 p.
 artikel
175 Transport properties of lateral superlattices grown on vicinal GaAs (100) surfaces Lorke, Axel
 1994
 4-6 p. 559-562
4 p.
 artikel
176 Tunable far infrared absorption in logarithmically graded quantum wells Hopkins, P.F.
 1994
 4-6 p. 1285-1288
4 p.
 artikel
177 Valence-subband level crossing in GaAs/GaAsP strained-barrier quantum well structures observed by circularly polarized photoluminescence excitation spectroscopy Yaguchi, Hiroyuki
 1994
 4-6 p. 915-918
4 p.
 artikel
178 Valley mixing effects on electron tunneling transmission in GaAs/AlAs heterostructures Ivchenko, E.L.
 1994
 4-6 p. 813-816
4 p.
 artikel
179 Vibrational properties of Si/Ge superlattices: Theory and in-plane Raman scattering experiments Schorer, R.
 1994
 4-6 p. 757-760
4 p.
 artikel
180 Wannier-stark states in nanostructures Fagotto, E.A.M.
 1994
 4-6 p. 1171-1174
4 p.
 artikel
181 Widely tuneable quantum wire arrays in MISFET-type heterojunctions with a stacked gate Hertel, G.
 1994
 4-6 p. 1289-1292
4 p.
 artikel
182 Wire-like incorporation of dopant atoms during MBE growth on vicinal GaAs(001) surfaces Däweritz, L.
 1994
 4-6 p. 783-787
5 p.
 artikel
183 Γ-X electron transfer in type II tunneling bi-quantum wells Tackeuchi, Atsushi
 1994
 4-6 p. 809-812
4 p.
 artikel
184 X-ray diffraction analysis fo GaAs/AlAs multilayer structures grown by molecular beam epitaxy on (311) and (210) GaAs surfaces Tagliente, M.A.
 1994
 4-6 p. 747-751
5 p.
 artikel
185 Zeeman studies of CdTe-Cd1 − x Mn xTe multiquantum wells Jackson, S.
 1994
 4-6 p. 1129-1132
4 p.
 artikel
186 Zeeman tuning of II–VI-based diluted magnetic semiconductor superlattices Furdyna, J.K.
 1994
 4-6 p. 1065-1071
7 p.
 artikel
                             186 gevonden resultaten
 
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