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                             74 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Accurate treatment of interface roughness in nanoscale DG MOSFETs using non-equilibrium Green's functions Fonseca, James
 2004
 10-11 p. 1843-1847
5 p.
 artikel
2 A comparison of the AlN annealing cap for 4H–SiC annealed in nitrogen versus argon atmosphere Derenge, M.A.
 2004
 10-11 p. 1867-1872
6 p.
 artikel
3 AC performance of nanoelectronics: towards a ballistic THz nanotube transistor Burke, Peter J.
 2004
 10-11 p. 1981-1986
6 p.
 artikel
4 A lateral structure for low-cost fabrication of COOLMOSTM Shahrjerdi, Davood
 2004
 10-11 p. 1953-1957
5 p.
 artikel
5 A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs Suligoj, Tomislav
 2004
 10-11 p. 2047-2050
4 p.
 artikel
6 A microstructural study of the CdTe/ZnTe film morphology as related to the Si substrate orientation Sarney, W.L.
 2004
 10-11 p. 1917-1920
4 p.
 artikel
7 A modeling of the optical properties of the zinc oxide–zinc magnesium oxide double barrier system Krokidis, G.
 2004
 10-11 p. 2099-2102
4 p.
 artikel
8 Analytical model of body factor in short channel bulk MOSFETs for low voltage applications Kumar, Anil
 2004
 10-11 p. 1763-1766
4 p.
 artikel
9 An analytical model of SiC MESFET incorporating trapping and thermal effects Mukherjee, Sankha S.
 2004
 10-11 p. 1709-1715
7 p.
 artikel
10 A new edge termination technique for SiC power devices Hu, Shuntao
 2004
 10-11 p. 1861-1866
6 p.
 artikel
11 An improved shift-and-ratio L eff extraction method for MOS transistors with halo/pocket implants Fathipour, Morteza
 2004
 10-11 p. 1829-1832
4 p.
 artikel
12 A novel SONOS nonvolatile flash memory device using substrate hot-hole injection for write and gate tunneling for erase Wang, Y.
 2004
 10-11 p. 2031-2034
4 p.
 artikel
13 Application of heat flow models to SOI current mirrors Yu, Feixia
 2004
 10-11 p. 1733-1739
7 p.
 artikel
14 A system-level analysis of Schottky diodes for incoherent THz imaging arrays Brown, E.R.
 2004
 10-11 p. 2051-2053
3 p.
 artikel
15 Ballistic transport at GHz frequencies in ungated HEMT structures Kang, Sungmu
 2004
 10-11 p. 2013-2017
5 p.
 artikel
16 Barrier-enhanced InGaAs/InAlAs photodetectors using quantum-well intermixing Tait, Gregory B.
 2004
 10-11 p. 1783-1790
8 p.
 artikel
17 Beta engineering and circuit styles for SEU hardening PD-SOI SRAM cells Ioannou, Dimitris P.
 2004
 10-11 p. 1947-1951
5 p.
 artikel
18 Blue electroluminescence from MOS capacitors with Si-implanted SiO2 Matsuda, Toshihiro
 2004
 10-11 p. 1933-1941
9 p.
 artikel
19 Characterization of a MEMS BioChip for planar patch-clamp recording Pandey, Santosh
 2004
 10-11 p. 2061-2066
6 p.
 artikel
20 Characterization of moving bits (MBs) and QBD in wet/dry tunnel oxides for floating gate type nonvolatile memory (FG-NVM) applications Ackaert, Jan
 2004
 10-11 p. 1911-1915
5 p.
 artikel
21 Characterizing damage to ONO dielectrics induced during programming SONOS/NROMTM non-volatile semiconductor memory (NVSM) devices Wrazien, Stephen J.
 2004
 10-11 p. 2035-2039
5 p.
 artikel
22 Compact models for silicon carbide power devices McNutt, Ty
 2004
 10-11 p. 1757-1762
6 p.
 artikel
23 Degradation and recovery of SiGe HBTs following radiation and hot-carrier stressing Sheng, S.R.
 2004
 10-11 p. 1901-1906
6 p.
 artikel
24 Dependence of film morphology on deposition rate in ITO/TPD/Alq3/Al organic luminescent diodes Mu, Haichuan
 2004
 10-11 p. 2085-2088
4 p.
 artikel
25 Design and fabrication of Schottky diode, on-chip RF power detector Jeon, Woochul
 2004
 10-11 p. 2089-2093
5 p.
 artikel
26 Design of MEMS-tunable novel monolithic optical filters in InP with horizontal bragg mirrors Datta, Madhumita
 2004
 10-11 p. 1959-1963
5 p.
 artikel
27 Device design for a raised extrinsic base SiGe bipolar technology Haralson, Erik
 2004
 10-11 p. 1927-1931
5 p.
 artikel
28 Double gate (DG)-SOI ratioed logic with symmetric DG load––a novel approach for sub 50 nm low-voltage/low-power circuit design Mitra, S.
 2004
 10-11 p. 1727-1732
6 p.
 artikel
29 Drift dominated InP/GaP photodiodes Sun, Yanning
 2004
 10-11 p. 1975-1979
5 p.
 artikel
30 Effects of microwave interference on the operational parameters of n-channel enhancement mode MOSFET devices in CMOS integrated circuits Kim, Kyechong
 2004
 10-11 p. 1795-1799
5 p.
 artikel
31 Electrical parameters in highly doped strained n-Si1− x Ge x epilayers grown on Si substrates Tsamakis, D.
 2004
 10-11 p. 2095-2098
4 p.
 artikel
32 Enhanced functionality in GaN and SiC devices by using novel processing Pearton, S.J.
 2004
 10-11 p. 1965-1974
10 p.
 artikel
33 Gallium-arsenide deep-level tunnel diode with record negative conductance and record peak current density Pan, Janet L.
 2004
 10-11 p. 2067-2070
4 p.
 artikel
34 Growth parameter dependence of gain compression in AlGaN/GaN HFETs Faraclas, Elias W.
 2004
 10-11 p. 1849-1853
5 p.
 artikel
35 High temperature Hall effect measurements of semi-insulating 4H–SiC substrates Mitchel, W.C.
 2004
 10-11 p. 1693-1697
5 p.
 artikel
36 Impact of asymmetric metal coverage on high performance MOSFET mismatch Fukumoto, Jay
 2004
 10-11 p. 1767-1770
4 p.
 artikel
37 Impact of device physics on DG and SOI MOSFET linearity Ma, Wei
 2004
 10-11 p. 1741-1746
6 p.
 artikel
38 Impurity and defect centers of n-type 4H-SiC single crystals investigated by a photoluminescence and a piezoelectric photo thermal spectroscopies Sakai, K.
 2004
 10-11 p. 1873-1876
4 p.
 artikel
39 InP heterojunction bipolar transistor with a selectively implanted collector Dong, Yingda
 2004
 10-11 p. 1699-1702
4 p.
 artikel
40 Interfacial oxide determination and chemical/electrical structures of HfO2/SiO x /Si gate dielectrics Xie, L.
 2004
 10-11 p. 2071-2077
7 p.
 artikel
41 Low-frequency noise characteristics of AlSb/InAsSb HEMTs Kruppa, W.
 2004
 10-11 p. 2079-2084
6 p.
 artikel
42 Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode Zhu, Shiyang
 2004
 10-11 p. 1987-1992
6 p.
 artikel
43 Macroelectronic applications of carbon nanotube networks Novak, J.P.
 2004
 10-11 p. 1753-1756
4 p.
 artikel
44 Maskless fabrication of JFETs via focused ion beams De Marco, Anthony J.
 2004
 10-11 p. 1833-1836
4 p.
 artikel
45 MEMS-based embedded sensor virtual components for system-on-a-chip (SoC) Afridi, M.
 2004
 10-11 p. 1777-1781
5 p.
 artikel
46 Modeling C–V characteristics of deep sub-0.1 micron mesoscale MOS devices Gunther, Norman G.
 2004
 10-11 p. 1883-1890
8 p.
 artikel
47 Modeling of direct tunneling current through interfacial oxide and high-K gate stacks Zhao, Yijie
 2004
 10-11 p. 1801-1807
7 p.
 artikel
48 Modeling of nonvolatile floating gate quantum dot memory Hasaneen, El-Sayed
 2004
 10-11 p. 2055-2059
5 p.
 artikel
49 Molecular devices formed by direct monolayer attachment to silicon Richter, C.A.
 2004
 10-11 p. 1747-1752
6 p.
 artikel
50 Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation Sudirgo, S.
 2004
 10-11 p. 1907-1910
4 p.
 artikel
51 Nanoscale FinFETs for low power applications Rösner, W.
 2004
 10-11 p. 1819-1823
5 p.
 artikel
52 Noise in Metamorphic AlGaAsSb/InGaAs/AlGaAsSb HEMTs Webster, Richard T.
 2004
 10-11 p. 2007-2011
5 p.
 artikel
53 [No title] Iliadis, Agis A.
 2004
 10-11 p. 1691-
1 p.
 artikel
54 [No title] 2004
 10-11 p. E1-
1 p.
 artikel
55 Novel polysilicon gate engineering with a laser thermal process for sub-40 nm CMOS devices Yamamoto, T.
 2004
 10-11 p. 1837-1842
6 p.
 artikel
56 On the scaling limits of low-frequency noise in SiGe HBTs Johansen, Jarle A.
 2004
 10-11 p. 1897-1900
4 p.
 artikel
57 Performance of unpassivated AlGaN/GaN/SiC HEMTs after short-term electrical bias stress Bernát, J.
 2004
 10-11 p. 1825-1828
4 p.
 artikel
58 Polyaniline/single-walled carbon nanotube composite electronic devices Ramamurthy, P.C.
 2004
 10-11 p. 2019-2024
6 p.
 artikel
59 Post-annealing effects on device performance of AlGaN/GaN HFETs Lee, Jaesun
 2004
 10-11 p. 1855-1859
5 p.
 artikel
60 Proton irradiation damages in CuInSe2 thin film solar cell materials by a piezoelectric photothermal spectroscopy Akaki, Yoji
 2004
 10-11 p. 1815-1818
4 p.
 artikel
61 Reliability challenges of high performance PD SOI CMOS with ultra-thin gate dielectrics Zhao, Eugene
 2004
 10-11 p. 1703-1708
6 p.
 artikel
62 Reliability of SiC MOS devices Singh, Ranbir
 2004
 10-11 p. 1717-1720
4 p.
 artikel
63 Scalable 2-bit silicon–oxide–nitride–oxide–silicon (SONOS) memory with physically separated local nitrides under a merged gate Lee, Yong Kyu
 2004
 10-11 p. 1771-1775
5 p.
 artikel
64 Scaling rules for SOI MOSFETs operating in the fully inverted mode Hanajiri, T.
 2004
 10-11 p. 1943-1946
4 p.
 artikel
65 Screening of Si–H bonds during plasma processing Srinivasan, P.
 2004
 10-11 p. 1809-1814
6 p.
 artikel
66 Self-heating in multi-emitter SiGe HBTs McAlister, S.P.
 2004
 10-11 p. 2001-2006
6 p.
 artikel
67 Si doped p- and n-type Al x Ga1−x As epilayers for high density lateral-junction LED arrays on (311)A patterned substrate Saravanan, S.
 2004
 10-11 p. 1791-1794
4 p.
 artikel
68 Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF performance Hackbarth, T.
 2004
 10-11 p. 1921-1925
5 p.
 artikel
69 Study of ZnO nanocluster formation within styrene–acrylic acid and styrene–methacrylic acid diblock copolymers on Si and SiO2 surfaces Ali, H.A.
 2004
 10-11 p. 2025-2030
6 p.
 artikel
70 Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC) Hasanuzzaman, Md
 2004
 10-11 p. 1877-1881
5 p.
 artikel
71 The power of using automatic device optimization, based on iterative device simulations, in design of high-performance devices Bertilsson, K.
 2004
 10-11 p. 1721-1725
5 p.
 artikel
72 Transit times of SiGe:C HBTs using nonselective base epitaxy Zerounian, Nicolas
 2004
 10-11 p. 1993-1999
7 p.
 artikel
73 Tunable CW-THz system with a log-periodic photoconductive emitter Mendis, Rajind
 2004
 10-11 p. 2041-2045
5 p.
 artikel
74 Wideband modeling technique for deep sub-micron MOSFETs Chiou, Ming Hsiang
 2004
 10-11 p. 1891-1896
6 p.
 artikel
                             74 gevonden resultaten
 
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