| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A calcium hydroxyapatite precipitated from an aqueous solution
|
Arends, J.
|
|
1987
|
84 |
3 |
p. 515-532
18 p.
|
artikel
|
| 2 |
Adiabatic Nucleation in large molecule liquids
|
Meyer, Erich
|
|
1987
|
84 |
3 |
p. 533-538
6 p.
|
artikel
|
| 3 |
Cadmium doping of InP grown by MOCVD
|
Blaauw, C.
|
|
1987
|
84 |
3 |
p. 431-435
5 p.
|
artikel
|
| 4 |
Crystal formation (nucleation) in the presence of growth restrainers
|
Leubner, I.H.
|
|
1987
|
84 |
3 |
p. 496-502
7 p.
|
artikel
|
| 5 |
Crystalline properties of In-Doped CdS thin films
|
Bertran, E.
|
|
1987
|
84 |
3 |
p. 483-488
6 p.
|
artikel
|
| 6 |
Effects of an axial magnetic field on solute distribution in Czochralski grown crystals - a further analysis
|
Kobayashi, S.
|
|
1987
|
84 |
3 |
p. 559-562
4 p.
|
artikel
|
| 7 |
Epitaxial growth of ferroelectric films for optoelectronic (SAW) applications
|
Neurgaonkar, R.R.
|
|
1987
|
84 |
3 |
p. 409-412
4 p.
|
artikel
|
| 8 |
Equilibrium shape of an ionic crystal in equilibrium with its vapour (NaCl)
|
Heyraud, J.C.
|
|
1987
|
84 |
3 |
p. 503-508
6 p.
|
artikel
|
| 9 |
Etch pits on the (511)A and ( 51 1 )B planes in CdTe crystals
|
Iwanaga, H.
|
|
1987
|
84 |
3 |
p. 345-348
4 p.
|
artikel
|
| 10 |
Growth of iron niobium sulfide single crystals by chemical transport with iodine
|
Hinode, H.
|
|
1987
|
84 |
3 |
p. 413-418
6 p.
|
artikel
|
| 11 |
Growth of large single crystals of KTiOPO4 (KTP) from high-temperature solution using heat pipe based furnace system
|
Bordui, P.F.
|
|
1987
|
84 |
3 |
p. 403-408
6 p.
|
artikel
|
| 12 |
Growth of thin niobium crystals by the strain-anneal method
|
Stock, S.R.
|
|
1987
|
84 |
3 |
p. 419-424
6 p.
|
artikel
|
| 13 |
High resolution electron microscopy and etching study of twins in GaAs
|
Zandbergen, H.W.
|
|
1987
|
84 |
3 |
p. 476-482
7 p.
|
artikel
|
| 14 |
High speed pulling of GaAs single crystal using the magnetic field applied LEC technique
|
Kimura, Tadashi
|
|
1987
|
84 |
3 |
p. 394-398
5 p.
|
artikel
|
| 15 |
Infrared absorbance of B2O3 at temperatures to 1250 °C
|
Ostrogorsky, A.G.
|
|
1987
|
84 |
3 |
p. 460-466
7 p.
|
artikel
|
| 16 |
Liquid phase epitaxial growth of Y3(Al, Sc)2Al3O12 on (111)-oriented Y3Al5O12 substrates
|
Gualtieri, D.M.
|
|
1987
|
84 |
3 |
p. 399-402
4 p.
|
artikel
|
| 17 |
Mass spectroscopic characterization of the GeSe: GeI4 vapor transport system
|
Buchan, Nicholas I.
|
|
1987
|
84 |
3 |
p. 359-370
12 p.
|
artikel
|
| 18 |
Mass transfer processes in KDP crystal growth from solutions
|
Bredikhin, V.I.
|
|
1987
|
84 |
3 |
p. 509-514
6 p.
|
artikel
|
| 19 |
MOCVD layer growth of ZnSe using a new zinc source
|
Wright, P.J.
|
|
1987
|
84 |
3 |
p. 552-554
3 p.
|
artikel
|
| 20 |
Monte Carlo simulation study on the dissolution of a train of infinitely straight steps and of an infinitely straight crystal edge
|
Cheng, Vincent K.W.
|
|
1987
|
84 |
3 |
p. 436-454
19 p.
|
artikel
|
| 21 |
Nonplanar interface morphologies during unidirectional solidification of a binary alloy
|
McFadden, G.B.
|
|
1987
|
84 |
3 |
p. 371-388
18 p.
|
artikel
|
| 22 |
Oscillatory growth rates in single crystals growing under diffusional control
|
García-Ruiz, J.M.
|
|
1987
|
84 |
3 |
p. 555-558
4 p.
|
artikel
|
| 23 |
Precipitates in PbTe:Cr crystal grown by the Bridgman method
|
GoŁacki, Z.
|
|
1987
|
84 |
3 |
p. 455-459
5 p.
|
artikel
|
| 24 |
Spiral crystal growth with nonlinear dependence of step growth rate on supersaturation; the {110} faces of KH2PO4 crystals in aqueous solution
|
Chernov, A.A.
|
|
1987
|
84 |
3 |
p. 389-393
5 p.
|
artikel
|
| 25 |
Study of the formation mechanism of dislocations during the growth process of aluminium and gallium single crystals from the melt by real time x-ray topography
|
Kobayashi, Tatsumasa
|
|
1987
|
84 |
3 |
p. 489-495
7 p.
|
artikel
|
| 26 |
Temperature distribution near the molten zone in a floating zone imaging furnace: Effect of absorptivity
|
Tsuiki, H.
|
|
1987
|
84 |
3 |
p. 467-475
9 p.
|
artikel
|
| 27 |
The application of a new, simple interference technique to the determination of growth concentration gradients of the layer perovskite NH3(CH2)3NH3CdCl4
|
Van Dam, J.C.
|
|
1987
|
84 |
3 |
p. 539-551
13 p.
|
artikel
|
| 28 |
The isotropic assumption during the Czochralski growth of single semiconductors crystals
|
Lambropoulos, John C.
|
|
1987
|
84 |
3 |
p. 349-358
10 p.
|
artikel
|
| 29 |
Thermodynamic analysis of molecular beam epitaxy of II–VI semiconductors
|
Koukitu, Akinori
|
|
1987
|
84 |
3 |
p. 425-430
6 p.
|
artikel
|
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