| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A gas mixing device for MOCVD
|
Blaauw, C.
|
|
1987
|
84 |
2 |
p. 191-195
5 p.
|
artikel
|
| 2 |
A study of dislocations in In-doped LEC GaAs crystals
|
Nakajima, Masato
|
|
1987
|
84 |
2 |
p. 295-302
8 p.
|
artikel
|
| 3 |
Compositional homogeneity of MOVPE-grown InGaAs: Dependence on reactor wall temperature and working pressure
|
Haspeklo, H.
|
|
1987
|
84 |
2 |
p. 196-198
3 p.
|
artikel
|
| 4 |
Crystal growth and characterization of La1−x M xMnO3 (M = Ca, Sr)
|
Hashimoto, Tomotaka
|
|
1987
|
84 |
2 |
p. 207-211
5 p.
|
artikel
|
| 5 |
Cubic and hexagonal ice formation in water-glycerol mixture (50% w / w)
|
Vigier, G.
|
|
1987
|
84 |
2 |
p. 309-315
7 p.
|
artikel
|
| 6 |
Cubic Sn from liquid phase epitaxy on InSb
|
Amornkitbamrung, Vittaya
|
|
1987
|
84 |
2 |
p. 326-328
3 p.
|
artikel
|
| 7 |
Effect of crystal orientation on dislocation formation in LEC GaAs
|
Fornari, R.
|
|
1987
|
84 |
2 |
p. 266-270
5 p.
|
artikel
|
| 8 |
Effects of crucible material on undoped LEC GaAs crystals
|
Fujii, Takashi
|
|
1987
|
84 |
2 |
p. 237-240
4 p.
|
artikel
|
| 9 |
Electroabsorptive In1-xGaxAsyP1-y superlattices grown by liquid phase epitaxy
|
Greene, P.D.
|
|
1987
|
84 |
2 |
p. 259-265
7 p.
|
artikel
|
| 10 |
Etching of crystals
|
Elwell, D.
|
|
1987
|
84 |
2 |
p. 342-343
2 p.
|
artikel
|
| 11 |
Growth and structural considerations on single TlBiSe2 crystals
|
Toubektsis, S.N.
|
|
1987
|
84 |
2 |
p. 316-322
7 p.
|
artikel
|
| 12 |
Growth behaviour of the superconducting phase in Y-Ba-Cu-O systems
|
Bohr, H.
|
|
1987
|
84 |
2 |
p. 332-334
3 p.
|
artikel
|
| 13 |
Growth of buried garnet channel waveguides by liquid phase epitaxy
|
Tolksdorf, W.
|
|
1987
|
84 |
2 |
p. 323-325
3 p.
|
artikel
|
| 14 |
Magnetic field effect on residual impurity concentrations for LEC GaAs crystal growth
|
Terashima, Kazutaka
|
|
1987
|
84 |
2 |
p. 247-252
6 p.
|
artikel
|
| 15 |
Mathematical modelling of the liquid encapsulated Czochralski growth of gallium arsenide
|
Schvezov, C.
|
|
1987
|
84 |
2 |
p. 219-230
12 p.
|
artikel
|
| 16 |
Mathematical modelling of the liquid encapsulated czochralski growth of gallium arsenide
|
Schvezov, C.
|
|
1987
|
84 |
2 |
p. 212-218
7 p.
|
artikel
|
| 17 |
Modes of oscillation in melts from Fourier analysis of temperature-time data
|
Elwell, Dennis
|
|
1987
|
84 |
2 |
p. 335-340
6 p.
|
artikel
|
| 18 |
Morphology and growth mechanism of VLS grown Zn crystals from Zn–Bi monotectic droplets
|
Yumoto, Hisami
|
|
1987
|
84 |
2 |
p. 185-190
6 p.
|
artikel
|
| 19 |
Multiple stability and pH dependence on periodic precipitation in illuminated lead chromate system
|
Das, Ishwar
|
|
1987
|
84 |
2 |
p. 231-236
6 p.
|
artikel
|
| 20 |
News, reports and announcements
|
|
|
1987
|
84 |
2 |
p. 341-
1 p.
|
artikel
|
| 21 |
Nucleation and growth behaviour of KDP from degassed and undegassed aqueous solutions
|
Owczarek, I.
|
|
1987
|
84 |
2 |
p. 329-331
3 p.
|
artikel
|
| 22 |
On the factors impairing the compositional transition abruptness in heterojunctions grown by vapour-phase epitaxy
|
Van Opdorp, C.
|
|
1987
|
84 |
2 |
p. 271-288
18 p.
|
artikel
|
| 23 |
Self-diffusion of cadmium telluride
|
Jones, E.D.
|
|
1987
|
84 |
2 |
p. 289-294
6 p.
|
artikel
|
| 24 |
Some kinetic and thermodynamic aspects of dopant incorporation in MBE grown InP and GaAs
|
Airaksinen, V.M.
|
|
1987
|
84 |
2 |
p. 241-246
6 p.
|
artikel
|
| 25 |
The influence of pH on the habit and the rate of α-LiIO3 crystal growth
|
Chen, W.C.
|
|
1987
|
84 |
2 |
p. 303-308
6 p.
|
artikel
|
| 26 |
The ultraviolet absorpton spectra of selected organometallic compounds used in the chemical vapor deposition of gallium arsenide
|
McCrary, V.R.
|
|
1987
|
84 |
2 |
p. 253-258
6 p.
|
artikel
|
| 27 |
Vapour phase epitaxy of wide Gap II–VI compounds
|
Hartmann, H.
|
|
1987
|
84 |
2 |
p. 199-206
8 p.
|
artikel
|
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