| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Alkaline earth sulfide thin films grown by atomic layer epitaxy
|
Tammenmaa, M.
|
|
1987
|
84 |
1 |
p. 151-154
4 p.
|
artikel
|
| 2 |
Angle-resolved light scattering studies of silicon-on-sapphire
|
Pickering, C.
|
|
1987
|
84 |
1 |
p. 180-183
4 p.
|
artikel
|
| 3 |
A transmission electron microscope study of lattice defects and water precipitation in α-berlinite AIPO4
|
Doukhan, J.C.
|
|
1987
|
84 |
1 |
p. 167-179
13 p.
|
artikel
|
| 4 |
A two-Rayleigh-number model of buoyancy-driven convection in vertical melt growth configurations
|
Müller, G.
|
|
1987
|
84 |
1 |
p. 36-49
14 p.
|
artikel
|
| 5 |
BCC and FCC forms of Eu epitaxially grown on Re surfaces
|
Melmed, A.J.
|
|
1987
|
84 |
1 |
p. 123-125
3 p.
|
artikel
|
| 6 |
Constitutional supercooling in thin-melt multi-slice liquid phase epitaxy of undoped InGaAs/InP alloy structures
|
Dutt, B.V.
|
|
1987
|
84 |
1 |
p. 163-166
4 p.
|
artikel
|
| 7 |
Crystals for soft X-ray spectroscopy
|
Arber, J.M.
|
|
1987
|
84 |
1 |
p. 145-150
6 p.
|
artikel
|
| 8 |
Deposition of InP particles on Si3N4 and SiO2 films by low pressure MOCVD
|
Tomiyama, Chisato
|
|
1987
|
84 |
1 |
p. 115-122
8 p.
|
artikel
|
| 9 |
Editorial Board
|
|
|
1987
|
84 |
1 |
p. ii-
1 p.
|
artikel
|
| 10 |
Erratum
|
|
|
1987
|
84 |
1 |
p. 184-
1 p.
|
artikel
|
| 11 |
Examination of the nature of lattice matched III–V semiconductor interfaces using computer simulated molecular beam epitaxial growth I. AC/BC interfaces
|
Thomsen, M.
|
|
1987
|
84 |
1 |
p. 79-97
19 p.
|
artikel
|
| 12 |
Examination of the nature of lattice matched III–V semiconductor interfaces using computer simulated molecular beam epitaxial growth II. AxB1-xC/BC interfaces
|
Thomsen, M.
|
|
1987
|
84 |
1 |
p. 98-114
17 p.
|
artikel
|
| 13 |
Growth and characterization of ZnSe single crystals by closed tube method
|
Chang, C.C.
|
|
1987
|
84 |
1 |
p. 11-20
10 p.
|
artikel
|
| 14 |
Growth kinetics of the (001) face of TGS below the ferroelectric transition temperature
|
Reiss, D.A.
|
|
1987
|
84 |
1 |
p. 7-10
4 p.
|
artikel
|
| 15 |
Hydrothermal growth of magnetite crystals (1 μm to 1 mm)
|
Heider, Franz
|
|
1987
|
84 |
1 |
p. 50-56
7 p.
|
artikel
|
| 16 |
Mass transport by diffusion in a tetramethoxysilane gel
|
Gits-Léon, S.
|
|
1987
|
84 |
1 |
p. 155-162
8 p.
|
artikel
|
| 17 |
Morphology and photoluminescence (PL) of ZnSe single crystals grown from Se and/Or As solvents
|
Mochizuki, K.
|
|
1987
|
84 |
1 |
p. 1-6
6 p.
|
artikel
|
| 18 |
Orientation dependence of GaAs growth in low-pressure OMVPE
|
Kamon, K.
|
|
1987
|
84 |
1 |
p. 126-132
7 p.
|
artikel
|
| 19 |
Preferential growth of the sphalerite or wurtzite type structure of CdSe thin films by the gas-solid process
|
Lawrence, Marcus F.
|
|
1987
|
84 |
1 |
p. 133-144
12 p.
|
artikel
|
| 20 |
Radiative heat exchange in Czochralski crystal growth
|
Atherton, L.J.
|
|
1987
|
84 |
1 |
p. 57-78
22 p.
|
artikel
|
| 21 |
Time-lag in nucleation of oxide precipitates in silicon due to high temperature preannealing
|
Inoue, N.
|
|
1987
|
84 |
1 |
p. 21-35
15 p.
|
artikel
|
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