no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
A model for nanoparticle transport and distribution with particle-interface interaction during binary alloy solidification
|
Jegatheesan, M. |
|
|
610 |
C |
p. |
article |
2 |
A self-disappear-mask for epitaxial lateral overgrowth of GaN films
|
Chen, Wangyibo |
|
|
610 |
C |
p. |
article |
3 |
Czochralski (CZ) process modification with cooling tube in the response to market Global silicon shortage
|
Dezfoli, Amir Reza Ansari |
|
|
610 |
C |
p. |
article |
4 |
Editorial Board
|
|
|
|
610 |
C |
p. |
article |
5 |
Effects of melt depth on oxygen transport in silicon crystal growth by continuous-feeding Czochralski method
|
Li, Jiancheng |
|
|
610 |
C |
p. |
article |
6 |
Experimental study on calcium carbonate phase transition from amorphous to crystalline forms in a reverse emulsion
|
Tallon, Jean |
|
|
610 |
C |
p. |
article |
7 |
First principles analysis on void-reduction mechanism and impact of oxygen in nitrogen-doped CZ-Si crystal
|
Sada, Akira |
|
|
610 |
C |
p. |
article |
8 |
Growth mode modulation and crystalline quality improvement of highly relaxed n-Al0.6Ga0.4N on high-temperature-annealing AlN/sapphire template via SiH4-pretreatment
|
Wang, Dadi |
|
|
610 |
C |
p. |
article |
9 |
Heterogeneous integration of high-quality diamond on aluminum nitride with low and high seeding density
|
K.C., Anupam |
|
|
610 |
C |
p. |
article |
10 |
Molecular dynamics simulation of polymorphic transformation between ε-CL-20 and β-CL-20 by short range order and orientational order parameter
|
Ren, Fu-de |
|
|
610 |
C |
p. |
article |
11 |
Research on nano-scale AlN nucleation layer growth and GaN HEMT characteristics based on MOCVD technology
|
Zhang, Dongguo |
|
|
610 |
C |
p. |
article |
12 |
Study and reduction of the surface pits in 4H-SiC epitaxial wafer
|
Lu, Weili |
|
|
610 |
C |
p. |
article |