| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A model for nanoparticle transport and distribution with particle-interface interaction during binary alloy solidification
|
Jegatheesan, M.
|
|
|
610 |
C |
p.
|
article
|
| 2 |
A self-disappear-mask for epitaxial lateral overgrowth of GaN films
|
Chen, Wangyibo
|
|
|
610 |
C |
p.
|
article
|
| 3 |
Czochralski (CZ) process modification with cooling tube in the response to market Global silicon shortage
|
Dezfoli, Amir Reza Ansari
|
|
|
610 |
C |
p.
|
article
|
| 4 |
Editorial Board
|
|
|
|
610 |
C |
p.
|
article
|
| 5 |
Effects of melt depth on oxygen transport in silicon crystal growth by continuous-feeding Czochralski method
|
Li, Jiancheng
|
|
|
610 |
C |
p.
|
article
|
| 6 |
Experimental study on calcium carbonate phase transition from amorphous to crystalline forms in a reverse emulsion
|
Tallon, Jean
|
|
|
610 |
C |
p.
|
article
|
| 7 |
First principles analysis on void-reduction mechanism and impact of oxygen in nitrogen-doped CZ-Si crystal
|
Sada, Akira
|
|
|
610 |
C |
p.
|
article
|
| 8 |
Growth mode modulation and crystalline quality improvement of highly relaxed n-Al0.6Ga0.4N on high-temperature-annealing AlN/sapphire template via SiH4-pretreatment
|
Wang, Dadi
|
|
|
610 |
C |
p.
|
article
|
| 9 |
Heterogeneous integration of high-quality diamond on aluminum nitride with low and high seeding density
|
K.C., Anupam
|
|
|
610 |
C |
p.
|
article
|
| 10 |
Molecular dynamics simulation of polymorphic transformation between ε-CL-20 and β-CL-20 by short range order and orientational order parameter
|
Ren, Fu-de
|
|
|
610 |
C |
p.
|
article
|
| 11 |
Research on nano-scale AlN nucleation layer growth and GaN HEMT characteristics based on MOCVD technology
|
Zhang, Dongguo
|
|
|
610 |
C |
p.
|
article
|
| 12 |
Study and reduction of the surface pits in 4H-SiC epitaxial wafer
|
Lu, Weili
|
|
|
610 |
C |
p.
|
article
|
Journal description