| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Characterization of epitaxial layers grown on 4H-SiC (0 0 0 −1) substrates
|
Chen, Junhong
|
|
|
604 |
C |
p.
|
artikel
|
| 2 |
Crystal step edges with alternating rows of growth units: 1D nucleation and step velocity
|
Joswiak, Mark N.
|
|
|
604 |
C |
p.
|
artikel
|
| 3 |
Demonstrations of high voltage SiC materials, devices and applications in the solid state transformer
|
Yang, Fei
|
|
|
604 |
C |
p.
|
artikel
|
| 4 |
Editorial Board
|
|
|
|
604 |
C |
p.
|
artikel
|
| 5 |
Efficiency droop in AlGaN crystal-based UVB LEDs in the context of electron blocking mechanism
|
Ajmal Khan, M.
|
|
|
604 |
C |
p.
|
artikel
|
| 6 |
Enhancing ultraviolet response of NiO/Si heterojunction by high temperature anneal
|
Xi, Wang
|
|
|
604 |
C |
p.
|
artikel
|
| 7 |
Growth and characterization of IR nonlinear optical PbIn6Te10 crystal
|
Xiong, Zhengbin
|
|
|
604 |
C |
p.
|
artikel
|
| 8 |
Growth of compressively strained Ga x In1 −x As y P1 −y quantum wells for 690–730 nm laser emission
|
Maaßdorf, A.
|
|
|
604 |
C |
p.
|
artikel
|
| 9 |
Hypo-peritectic TRIS–NPG in a stationary temperature gradient: Thermodynamics, grain boundary migration and phase identification
|
Ludwig, A.
|
|
|
604 |
C |
p.
|
artikel
|
| 10 |
Impact of Br-doping on the optical and optoelectronic properties of CsPbCl3 crystals
|
Wang, Qing
|
|
|
604 |
C |
p.
|
artikel
|
| 11 |
Impact of Ge doping on MOVPE grown InGaN layers
|
Hubáček, T.
|
|
|
604 |
C |
p.
|
artikel
|
| 12 |
Sn distribution in Ge/GeSn heterostructures formed by sputter epitaxy method
|
Tsukamoto, Takahiro
|
|
|
604 |
C |
p.
|
artikel
|
| 13 |
Structural features of Li0.55Ag0.45InSe2 and Li0.37Ag0.63InSe2 crystals
|
Lobanov, S.I.
|
|
|
604 |
C |
p.
|
artikel
|
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