| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A novel application to quantum dot materials to the active region of superluminescent diodes
|
Zhang, Z.Y.
|
|
2002
|
243 |
1 |
p. 25-29
5 p.
|
artikel
|
| 2 |
Backfiles Physics
|
|
|
2002
|
243 |
1 |
p. I-
1 p.
|
artikel
|
| 3 |
Call for Papers
|
|
|
2002
|
243 |
1 |
p. III-IV
nvt p.
|
artikel
|
| 4 |
Carbon nanotube synthesis using a magnetic fluid via thermal chemical vapor deposition
|
Cho, Yu-Suk
|
|
2002
|
243 |
1 |
p. 224-229
6 p.
|
artikel
|
| 5 |
Contents Continued
|
|
|
2002
|
243 |
1 |
p. VI-
1 p.
|
artikel
|
| 6 |
Defect structure of Ge-doped CdTe
|
Fiederle, M
|
|
2002
|
243 |
1 |
p. 77-86
10 p.
|
artikel
|
| 7 |
Determination of crystal misorientation in epitaxial lateral overgrowth of GaN
|
Chen, W.M.
|
|
2002
|
243 |
1 |
p. 94-102
9 p.
|
artikel
|
| 8 |
Development of three-dimensional dislocation density analysis code for annealing process of single crystal ingot
|
Miyazaki, N.
|
|
2002
|
243 |
1 |
p. 47-54
8 p.
|
artikel
|
| 9 |
Dynamics of crystal size distributions with size-dependent rates
|
Madras, Giridhar
|
|
2002
|
243 |
1 |
p. 204-213
10 p.
|
artikel
|
| 10 |
Effects of Tl on the electrocrystallisation of thick Au layers from KAu(CN)2 solutions
|
Bozzini, Benedetto
|
|
2002
|
243 |
1 |
p. 190-203
14 p.
|
artikel
|
| 11 |
Fabrication of periodic domain structure in β′-Gd2(MoO4)3 crystal
|
Yuan, Qingxi
|
|
2002
|
243 |
1 |
p. 185-189
5 p.
|
artikel
|
| 12 |
Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy
|
Kawasaki, Koji
|
|
2002
|
243 |
1 |
p. 129-133
5 p.
|
artikel
|
| 13 |
Generation of misfit dislocations in high indium content InGaN layer grown on GaN
|
Cho, Hyung Koun
|
|
2002
|
243 |
1 |
p. 124-128
5 p.
|
artikel
|
| 14 |
Growth and characterization of CdS and doped CdS single crystals
|
Sankar, N.
|
|
2002
|
243 |
1 |
p. 117-123
7 p.
|
artikel
|
| 15 |
Growth of Bi4Ge3O12 single crystal by the micro-pulling-down method from bismuth rich composition
|
Shim, J.B
|
|
2002
|
243 |
1 |
p. 157-163
7 p.
|
artikel
|
| 16 |
Growth of epitaxial multilayers consisting of alternately stacked superconducting YBa2Cu3O7−δ and colossal magnetoresistive La1−xPbxMnO3 layers
|
Singh, Ajay
|
|
2002
|
243 |
1 |
p. 134-142
9 p.
|
artikel
|
| 17 |
Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers
|
Danielsson, Ö.
|
|
2002
|
243 |
1 |
p. 170-184
15 p.
|
artikel
|
| 18 |
High Cited Articles within Backfiles CRYS
|
|
|
2002
|
243 |
1 |
p. II-
1 p.
|
artikel
|
| 19 |
Investigations of growth of self-assembled GaInN–GaN islands on SiC substrate by metalorganic vapor phase epitaxy
|
Kobayashi, Yasuyuki
|
|
2002
|
243 |
1 |
p. 103-107
5 p.
|
artikel
|
| 20 |
Low-temperature hydrothermal synthesis of pure metastable γ-manganese sulfide (MnS) crystallites
|
Zhang, YongCai
|
|
2002
|
243 |
1 |
p. 214-217
4 p.
|
artikel
|
| 21 |
Magnetic stabilization of the buoyant convection in the liquid-encapsulated Czochralski process
|
Walker, J.S.
|
|
2002
|
243 |
1 |
p. 108-116
9 p.
|
artikel
|
| 22 |
Mechanisms of heat and oxygen transfer in silicon melt in an electromagnetic Czochralski system
|
Kakimoto, Koichi
|
|
2002
|
243 |
1 |
p. 55-65
11 p.
|
artikel
|
| 23 |
Optimization of process conditions of selective epitaxial growth for elevated source/drain CMOS transistor
|
Nakahata, Takumi
|
|
2002
|
243 |
1 |
p. 87-93
7 p.
|
artikel
|
| 24 |
Photoluminescence and photoreflectance of Al0.24Ga0.76As/In0.15Ga0.85As/GaAs pseudomorphic high electron mobility transistor structures after rapid thermal annealing
|
Lee, Dong Yul
|
|
2002
|
243 |
1 |
p. 66-70
5 p.
|
artikel
|
| 25 |
Process of crystallization in thin amorphous tin oxide film
|
Kobayashi, T
|
|
2002
|
243 |
1 |
p. 143-150
8 p.
|
artikel
|
| 26 |
Properties of In0.53Ga0.47As/GaAs0.5Sb0.5 type II multiple quantum well structures grown on (111)B InP substrates by molecular beam epitaxy
|
Higashino, T
|
|
2002
|
243 |
1 |
p. 8-12
5 p.
|
artikel
|
| 27 |
Some properties of carbon-doped GaAs using carbon tetrabromide in solid-source molecular beam epitaxy
|
Zhang, R
|
|
2002
|
243 |
1 |
p. 41-46
6 p.
|
artikel
|
| 28 |
Strain relaxation of InP film directly grown on GaAs patterned compliant substrate
|
Zhang, Zhicheng
|
|
2002
|
243 |
1 |
p. 71-76
6 p.
|
artikel
|
| 29 |
The growth and annealing of single crystalline ZnO films by low-pressure MOCVD
|
Ye, Jiandong
|
|
2002
|
243 |
1 |
p. 151-156
6 p.
|
artikel
|
| 30 |
The origins of the International Crystal Growth Conferences, the International Organisation for Crystal Growth and the Journal of Crystal Growth
|
Hurle, D.T.J
|
|
2002
|
243 |
1 |
p. 1-7
7 p.
|
artikel
|
| 31 |
Thermal desorption effects in chemical vapor deposition of silicon nanoparticles
|
Leach, W.Thomas
|
|
2002
|
243 |
1 |
p. 30-40
11 p.
|
artikel
|
| 32 |
The structure and current–voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method
|
Chen, Zhen
|
|
2002
|
243 |
1 |
p. 19-24
6 p.
|
artikel
|
| 33 |
Thin film crystal growth of BaZrO3 at low oxygen partial pressure
|
Kitano, Y
|
|
2002
|
243 |
1 |
p. 164-169
6 p.
|
artikel
|
| 34 |
Transmission electron microscopy observations on fine structures of shish-kebab crystals of isotactic polystyrene by partial melting
|
Liu, Tianxi
|
|
2002
|
243 |
1 |
p. 218-223
6 p.
|
artikel
|
| 35 |
ZnO thin film grown on silicon by metal-organic chemical vapor deposition
|
Wang, Xinqiang
|
|
2002
|
243 |
1 |
p. 13-18
6 p.
|
artikel
|
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