| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Anomalous effects of dopant distribution in Ge single crystals grown by FZ-technique aboard spacecrafts
|
Kartavykh, A.V.
|
|
1999
|
205 |
4 |
p. 497-502
6 p.
|
artikel
|
| 2 |
Ce-doped LiYF4 growth under CF4 atmosphere
|
Baldochi, Sonia Licia
|
|
1999
|
205 |
4 |
p. 537-542
6 p.
|
artikel
|
| 3 |
Control of polymorphic occurrence of behenic acid thin films in physical vapor deposition
|
Takiguchi, H.
|
|
1999
|
205 |
4 |
p. 575-583
9 p.
|
artikel
|
| 4 |
Development of bioprosthetic heart valve calcification in vitro and in animal models: morphology and composition
|
Mavrilas, D
|
|
1999
|
205 |
4 |
p. 554-562
9 p.
|
artikel
|
| 5 |
Effect of chondroitin sulfate and biglycan on the crystallization of hydroxyapatite under physiological conditions
|
Gafni, G
|
|
1999
|
205 |
4 |
p. 618-623
6 p.
|
artikel
|
| 6 |
Effects of increased growth rate of well layer on 2.1% compressive strained InAsP-MQWs grown by metalorganic molecular beam epitaxy (MOMBE)
|
Ogasawara, Matsuyuki
|
|
1999
|
205 |
4 |
p. 489-496
8 p.
|
artikel
|
| 7 |
Epitaxial growth of Mn3O4 film on MgO(001) substrate by plasma-assisted molecular beam epitaxy (MBE)
|
Guo, L.W
|
|
1999
|
205 |
4 |
p. 531-536
6 p.
|
artikel
|
| 8 |
Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy
|
Jiang, W.H
|
|
1999
|
205 |
4 |
p. 607-612
6 p.
|
artikel
|
| 9 |
Growth and characterization of rhenium-doped MoS2 single crystals
|
Tiong, K.K
|
|
1999
|
205 |
4 |
p. 543-547
5 p.
|
artikel
|
| 10 |
Growth of oriented C11b MoSi2 bicrystals using a modified Czochralski technique
|
Garrett, J.D
|
|
1999
|
205 |
4 |
p. 515-522
8 p.
|
artikel
|
| 11 |
Index
|
|
|
1999
|
205 |
4 |
p. 624-629
6 p.
|
artikel
|
| 12 |
Index
|
|
|
1999
|
205 |
4 |
p. 630-631
2 p.
|
artikel
|
| 13 |
In situ observation of concentrational stratification and solid–liquid interface morphology during Ga–5% In alloy melt solidification
|
Yin, Hongbin
|
|
1999
|
205 |
4 |
p. 590-606
17 p.
|
artikel
|
| 14 |
Investigation by synchrotron radiation X-ray topography of lattice tilt formation in partially released InGaAs/GaAs compositionally graded layers
|
Ferrari, C
|
|
1999
|
205 |
4 |
p. 474-480
7 p.
|
artikel
|
| 15 |
New growth method of oxide crystals by PO2 change applied to SmBa2Cu3O x single crystals
|
Nishimura, Yoshihiro
|
|
1999
|
205 |
4 |
p. 503-509
7 p.
|
artikel
|
| 16 |
Nonlinear optical activity of anhydrous and hydrated sodium p-nitrophenolate
|
Brahadeeswaran, S
|
|
1999
|
205 |
4 |
p. 548-553
6 p.
|
artikel
|
| 17 |
Pressure effect on subtilisin crystallization and solubility
|
Webb, J.N.
|
|
1999
|
205 |
4 |
p. 563-574
12 p.
|
artikel
|
| 18 |
Self-organization of wire-like InAs nanostructures on InP
|
Li, Hanxuan
|
|
1999
|
205 |
4 |
p. 613-617
5 p.
|
artikel
|
| 19 |
Solute redistribution during the accelerated crucible rotation Bridgman growth of Hg1−x Mn x Te
|
Jie, Wanqi
|
|
1999
|
205 |
4 |
p. 510-514
5 p.
|
artikel
|
| 20 |
Spontaneous nanostructure formation on GaAs(211)B substrate
|
Lee, Jeong-Sik
|
|
1999
|
205 |
4 |
p. 467-473
7 p.
|
artikel
|
| 21 |
Tellurium-rich phase in n-type bismuth telluride crystals grown by the Bridgman technique
|
Custódio, M.C.C.
|
|
1999
|
205 |
4 |
p. 523-530
8 p.
|
artikel
|
| 22 |
TEM observation of threading dislocations in InAs self-assembled quantum dot structure
|
Shiramine, Ken-ichi
|
|
1999
|
205 |
4 |
p. 461-466
6 p.
|
artikel
|
| 23 |
Theoretical morphology and growth habit of rubidium hydrogen selenate crystals
|
Chen, Jianzhong
|
|
1999
|
205 |
4 |
p. 584-589
6 p.
|
artikel
|
| 24 |
Two-dimensional ordering of self-assembled In x Ga1−x As quantum dots grown on GaAs(311)B surfaces
|
Xu, Huaizhe
|
|
1999
|
205 |
4 |
p. 481-488
8 p.
|
artikel
|
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