| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of ice crystal growth for a crystal surface containing adsorbed antifreeze proteins
|
Grandum, Svein
|
|
1999
|
205 |
3 |
p. 382-390
9 p.
|
artikel
|
| 2 |
A simplified model of dendritic growth in the presence of natural convection
|
Schrage, Dean S.
|
|
1999
|
205 |
3 |
p. 410-426
17 p.
|
artikel
|
| 3 |
A transient model for the sublimation growth of silicon carbide single crystals
|
Bubner, Nikolaus
|
|
1999
|
205 |
3 |
p. 294-304
11 p.
|
artikel
|
| 4 |
Crystallisation of α-lactose monohydrate from dimethyl sulfoxide (DMSO) solutions: influence of β-lactose
|
Dincer, T.D.
|
|
1999
|
205 |
3 |
p. 368-374
7 p.
|
artikel
|
| 5 |
Disk crystals of ice grown in air-free water: no effect of dissolved air on the morphology
|
Maruyama, Minoru
|
|
1999
|
205 |
3 |
p. 391-394
4 p.
|
artikel
|
| 6 |
Enhancement of metastable zone width for solution growth of potassium acid phthalate
|
Srinivasan, K
|
|
1999
|
205 |
3 |
p. 457-459
3 p.
|
artikel
|
| 7 |
Facetting during directional growth of oxides from the melt: coupling between thermal fields, kinetics and melt/crystal interface shapes
|
Liu, Yongcai
|
|
1999
|
205 |
3 |
p. 333-353
21 p.
|
artikel
|
| 8 |
Growth defects in flux grown RbTiOAsO4 crystals observed with white-beam synchrotron radiation topography
|
Hu, X.B
|
|
1999
|
205 |
3 |
p. 323-327
5 p.
|
artikel
|
| 9 |
Growth of Bi12SiO20 single crystals by the pulling-down method with continuous feeding
|
Maida, Shigeru
|
|
1999
|
205 |
3 |
p. 317-322
6 p.
|
artikel
|
| 10 |
Growth of Bi2Sr2CaCu2Oy single crystals by a self-flux method using precursors
|
Kishida, S
|
|
1999
|
205 |
3 |
p. 284-288
5 p.
|
artikel
|
| 11 |
Growth of Ge-rich Si x Ge1−x single crystal with uniform composition (x=0.02) on a compositionally graded crystal for use as GaAs solar cells
|
Nakajima, Kazuo
|
|
1999
|
205 |
3 |
p. 270-276
7 p.
|
artikel
|
| 12 |
Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth
|
Lahrèche, H
|
|
1999
|
205 |
3 |
p. 245-252
8 p.
|
artikel
|
| 13 |
High-temperature crystallization and X-ray characterization of Y2SiO5, Y2Si2O7 and LaBSiO5
|
Leonyuk, N.I.
|
|
1999
|
205 |
3 |
p. 361-367
7 p.
|
artikel
|
| 14 |
Homoepitaxial growth of NdBa2Cu3O7−y films by metalorganic chemical vapor deposition
|
Komatsu, M
|
|
1999
|
205 |
3 |
p. 277-283
7 p.
|
artikel
|
| 15 |
Microstructures in oxide eutectic fibers grown by a modified micro-pulling-down method
|
Yoshikawa, Akira
|
|
1999
|
205 |
3 |
p. 305-316
12 p.
|
artikel
|
| 16 |
On-line control of solid–liquid interface by state feedback
|
Batur, Celal
|
|
1999
|
205 |
3 |
p. 395-409
15 p.
|
artikel
|
| 17 |
On the effect of Li diffusion in Er-doped bulk periodic poled lithium niobate crystals
|
Bermúdez, V
|
|
1999
|
205 |
3 |
p. 328-332
5 p.
|
artikel
|
| 18 |
Physical and chemical properties of gels
|
Moreno, Abel
|
|
1999
|
205 |
3 |
p. 375-381
7 p.
|
artikel
|
| 19 |
Self-limiting growth of InP by alternate trimethylindium and tertiarybutylphosphine supply in ultrahigh vacuum
|
Otsuka, Nobuyuki
|
|
1999
|
205 |
3 |
p. 253-263
11 p.
|
artikel
|
| 20 |
Structure of the CdTe/Cd0.959Zn0.041Te, Hg1−x Cd x Te/CdTe, CdTe/GaAs heterojunctions
|
Yu, Fuju
|
|
1999
|
205 |
3 |
p. 264-269
6 p.
|
artikel
|
| 21 |
Studies on the effective nonlinear coefficient of GdCa4O(BO3)3 crystal
|
Zhang, Shujun
|
|
1999
|
205 |
3 |
p. 453-456
4 p.
|
artikel
|
| 22 |
Surface structure of Gd5(Si,Ge)4 crystals
|
Szade, J
|
|
1999
|
205 |
3 |
p. 289-293
5 p.
|
artikel
|
| 23 |
The application of rate equations to describe nucleation and growth on rough substrates: tin and lead on aluminium
|
Eisenmenger-Sittner, C
|
|
1999
|
205 |
3 |
p. 441-452
12 p.
|
artikel
|
| 24 |
The interaction between a particle and an advancing solidification front
|
Rempel, A.W
|
|
1999
|
205 |
3 |
p. 427-440
14 p.
|
artikel
|
| 25 |
Unseeded precipitation of calcium and magnesium phosphates from modified seawater solutions
|
Golubev, Sergei V
|
|
1999
|
205 |
3 |
p. 354-360
7 p.
|
artikel
|
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