| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A numerical simulation model for molecular-beam epitaxial (MBE) growth on nonplanar surfaces
|
Ohtsuka, Mitsuru
|
|
1999
|
205 |
1-2 |
p. 112-122
11 p.
|
artikel
|
| 2 |
Comparison of three turbulence models for simulation of melt convection in Czochralski crystal growth of silicon
|
Lipchin, Aleksey
|
|
1999
|
205 |
1-2 |
p. 71-91
21 p.
|
artikel
|
| 3 |
Crystal growth of BSO (Bi4Si3O12) by vertical Bridgman method
|
Ishii, M
|
|
1999
|
205 |
1-2 |
p. 191-195
5 p.
|
artikel
|
| 4 |
Deposition and simultaneous etching of Si in the chemical vapor deposition (CVD) process: approach by the charged cluster model
|
Hwang, Nong M.
|
|
1999
|
205 |
1-2 |
p. 59-63
5 p.
|
artikel
|
| 5 |
Effect of AlN buffer layer deposition conditions on the properties of GaN layer
|
Ito, Takahiro
|
|
1999
|
205 |
1-2 |
p. 20-24
5 p.
|
artikel
|
| 6 |
Extension mechanism of antiphase-boundaries in CuPt B-type ordered GaInP2 and (Al,Ga)InP2 epitaxial layers
|
Takeda, S
|
|
1999
|
205 |
1-2 |
p. 11-19
9 p.
|
artikel
|
| 7 |
Growth mechanisms of (00.1)GaN substrates in the hydride vapour-phase method: surface diffusion, spiral growth, H2 and GaCl3 mechanisms
|
Cadoret, Robert
|
|
1999
|
205 |
1-2 |
p. 123-135
13 p.
|
artikel
|
| 8 |
Growth of Be-doped homoepitaxial GaAs films on rough substrates
|
Coluci, V.R
|
|
1999
|
205 |
1-2 |
p. 36-42
7 p.
|
artikel
|
| 9 |
Growth of 1″ diameter ZnSe single crystal by the rotational chemical vapor transport method
|
Fujiwara, S
|
|
1999
|
205 |
1-2 |
p. 43-49
7 p.
|
artikel
|
| 10 |
Growth of LiNbO3 co-doped with Er3+/Yb3+
|
Cantelar, E
|
|
1999
|
205 |
1-2 |
p. 196-201
6 p.
|
artikel
|
| 11 |
Growth rate of equilibrium-like-shaped single crystals of superionic conductor cuprous selenide
|
Vučić, Z
|
|
1999
|
205 |
1-2 |
p. 136-152
17 p.
|
artikel
|
| 12 |
Heteroepitaxial growth of {111}-oriented diamond films on platinum{111}/sapphire{0001} substrates
|
Tachibana, Takeshi
|
|
1999
|
205 |
1-2 |
p. 163-168
6 p.
|
artikel
|
| 13 |
Interfacial microstructure in Si-on-sapphire heterostructure
|
Gartstein, E.
|
|
1999
|
205 |
1-2 |
p. 64-70
7 p.
|
artikel
|
| 14 |
KDP kinetics and dislocation efficiency of growth
|
Alexandru, H.V
|
|
1999
|
205 |
1-2 |
p. 215-222
8 p.
|
artikel
|
| 15 |
Kinetics of homogeneous nucleation of monodisperse spherical sulphur and anatase particles in water–acid systems
|
Urakaev, F.Kh
|
|
1999
|
205 |
1-2 |
p. 223-232
10 p.
|
artikel
|
| 16 |
Large Bi12TiO20 single crystals: a study of intrinsic defects and growth parameters
|
Carvalho, J.F.
|
|
1999
|
205 |
1-2 |
p. 185-190
6 p.
|
artikel
|
| 17 |
Numerical simulation of the influence of the orbiters attitude on the μg growth of InP:S crystals from an In solution during the EURECA-1 flight
|
Boschert, St.
|
|
1999
|
205 |
1-2 |
p. 92-96
5 p.
|
artikel
|
| 18 |
Numerical simulation of THM growth of CdTe in presence of rotating magnetic fields (RMF)
|
Ghaddar, Chahid K.
|
|
1999
|
205 |
1-2 |
p. 97-111
15 p.
|
artikel
|
| 19 |
On the coalescence and twinning of cubo-octahedral CeO2 condensates
|
Lee, Wen-Hsu
|
|
1999
|
205 |
1-2 |
p. 169-176
8 p.
|
artikel
|
| 20 |
Oriented bismuth titanate thin films by single-solid-source metal-organic chemical vapour deposition
|
Sun, Shan
|
|
1999
|
205 |
1-2 |
p. 177-184
8 p.
|
artikel
|
| 21 |
Photoluminescence of GaN:Mg grown by metalorganic vapor-phase epitaxy (MOVPE)
|
Lim, P.H
|
|
1999
|
205 |
1-2 |
p. 1-10
10 p.
|
artikel
|
| 22 |
Reduction of threading dislocations in GaAs on Si by the use of intermediate GaAs buffer layers prepared under high V–III ratios
|
Kakinuma, H
|
|
1999
|
205 |
1-2 |
p. 25-30
6 p.
|
artikel
|
| 23 |
Strain relaxation in AlN epitaxial layers grown on GaN single crystals
|
Langer, R
|
|
1999
|
205 |
1-2 |
p. 31-35
5 p.
|
artikel
|
| 24 |
Study on defects in CZ-Si crystals grown under three different cusp magnetic fields by infrared light scattering tomography
|
Ma, Minya
|
|
1999
|
205 |
1-2 |
p. 50-58
9 p.
|
artikel
|
| 25 |
Tailoring of specific interactions to modify the morphology of naproxen
|
Tomasko, David L.
|
|
1999
|
205 |
1-2 |
p. 233-243
11 p.
|
artikel
|
| 26 |
The formation of (001) oriented Ag2Se films on amorphous and polycrystalline substrates via polymorphic-phase transition
|
Sáfrán, G.
|
|
1999
|
205 |
1-2 |
p. 153-162
10 p.
|
artikel
|
| 27 |
X-ray diffraction studies of potassium dihydrogen phosphate (KDP) crystal surfaces
|
de Vries, S.A.
|
|
1999
|
205 |
1-2 |
p. 202-214
13 p.
|
artikel
|
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