| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A method for the calculation of defect equilibrium
|
Lott, K.
|
|
1999
|
197 |
3 |
p. 493-496
4 p.
|
artikel
|
| 2 |
Can percolation control doping, diffusion and phase segregation in (Hg,Cd)Te?
|
Cahen, David
|
|
1999
|
197 |
3 |
p. 537-541
5 p.
|
artikel
|
| 3 |
CdZnTe radiation detectors
|
Melnikov, A.A
|
|
1999
|
197 |
3 |
p. 663-665
3 p.
|
artikel
|
| 4 |
Characterization of CdTe substrates and MOCVD Cd1−x Zn x Te epilayers
|
Levy, M
|
|
1999
|
197 |
3 |
p. 626-629
4 p.
|
artikel
|
| 5 |
Conductivity change of Au/p-CdTe/Au as a function of the temperature gradient
|
Vacková, Světla
|
|
1999
|
197 |
3 |
p. 599-602
4 p.
|
artikel
|
| 6 |
Crystal growth of SrS from Te solution and its optical properties
|
Kanie, H.
|
|
1999
|
197 |
3 |
p. 504-506
3 p.
|
artikel
|
| 7 |
Defect studies in Cd0.95Mn0.05Te:Ga by DLTS
|
Szatkowski, J.
|
|
1999
|
197 |
3 |
p. 684-687
4 p.
|
artikel
|
| 8 |
Dependence of lattice parameter of melt-grown ZnSe on Zn partial pressure during in situ annealing
|
Udono, Haruhiko
|
|
1999
|
197 |
3 |
p. 466-470
5 p.
|
artikel
|
| 9 |
Diffusion length of minority carriers in (CdZn)Te and (HgCd)Te single crystals measured by EBIC method
|
Franc, J.
|
|
1999
|
197 |
3 |
p. 593-598
6 p.
|
artikel
|
| 10 |
Distribution of tellurium in melt-grown ZnSe(Te) crystals
|
Atroshchenko, L.V
|
|
1999
|
197 |
3 |
p. 471-474
4 p.
|
artikel
|
| 11 |
Doping and contacting of wide gap II–VI compounds
|
Faschinger, W
|
|
1999
|
197 |
3 |
p. 557-564
8 p.
|
artikel
|
| 12 |
Editorial
|
|
|
1999
|
197 |
3 |
p. VII-
1 p.
|
artikel
|
| 13 |
Electric field distribution in CdTe and Cd1−x Zn x Te nuclear detectors
|
Zumbiehl, A.
|
|
1999
|
197 |
3 |
p. 650-654
5 p.
|
artikel
|
| 14 |
Electron-irradiation enhanced dislocation glide in II–VI semiconductors
|
Levade, Colette
|
|
1999
|
197 |
3 |
p. 565-570
6 p.
|
artikel
|
| 15 |
Enhancement of magneto-optical effects in ZnHgMnTe solid solutions
|
Savchuk, A.I.
|
|
1999
|
197 |
3 |
p. 698-701
4 p.
|
artikel
|
| 16 |
Experimental evidence of the self-compensation mechanism in CdS
|
Desnica, U.V
|
|
1999
|
197 |
3 |
p. 612-615
4 p.
|
artikel
|
| 17 |
Generation–recombination noise and photo-induced transient conductivity in epitaxial CdHgTe long wavelength infrared detectors
|
Paul, Nichols
|
|
1999
|
197 |
3 |
p. 547-551
5 p.
|
artikel
|
| 18 |
Growth and characterization of high-resistivity CdTe〈Cl〉
|
Korbutyak, D.V
|
|
1999
|
197 |
3 |
p. 659-662
4 p.
|
artikel
|
| 19 |
Growth of CdZnTe single crystals for radiation detectors
|
Melnikov, A.A.
|
|
1999
|
197 |
3 |
p. 666-669
4 p.
|
artikel
|
| 20 |
Heat transfer simulation in a vertical Bridgman CdTe growth configuration
|
Martinez-Tomas, C
|
|
1999
|
197 |
3 |
p. 435-442
8 p.
|
artikel
|
| 21 |
High temperature electrical conductivity in the Cu solubility limit range in ZnS:Cu
|
Lott, K.
|
|
1999
|
197 |
3 |
p. 489-492
4 p.
|
artikel
|
| 22 |
High temperature electrical conductivity in the phase transition region
|
Lott, K.
|
|
1999
|
197 |
3 |
p. 485-488
4 p.
|
artikel
|
| 23 |
High-temperature point defect equilibrium in CdTe modelling
|
Fochuk, P
|
|
1999
|
197 |
3 |
p. 603-606
4 p.
|
artikel
|
| 24 |
Improvement of CdTe substrate quality by acoustic treatment
|
Lisiansky, M
|
|
1999
|
197 |
3 |
p. 630-634
5 p.
|
artikel
|
| 25 |
Influence of deep levels on CdZnTe nuclear detectors
|
Zerrai, A
|
|
1999
|
197 |
3 |
p. 646-649
4 p.
|
artikel
|
| 26 |
Influence of structural defects on lattice parameter and measured composition of Hg1−x Cd x Te epilayers
|
Mainzer, N.
|
|
1999
|
197 |
3 |
p. 542-546
5 p.
|
artikel
|
| 27 |
In situ observation of twin formation during the growth of ZnSe single crystals from the vapor phase
|
Schönherr, E.
|
|
1999
|
197 |
3 |
p. 455-461
7 p.
|
artikel
|
| 28 |
Intrinsic defects in photorefractive bulk CdTe and ZnCdTe
|
von Bardeleben, H.J.
|
|
1999
|
197 |
3 |
p. 718-723
6 p.
|
artikel
|
| 29 |
Investigation of deep levels in vanadium-doped CdTe and CdZnTe
|
Zerrai, A.
|
|
1999
|
197 |
3 |
p. 729-732
4 p.
|
artikel
|
| 30 |
Investigation of indium-defect pairs in CdTe by PAC spectroscopy
|
Reislöhner, U
|
|
1999
|
197 |
3 |
p. 576-580
5 p.
|
artikel
|
| 31 |
Investigation of properties of porous silicon embedded with ZnSe and CdSe
|
Belogorokhov, A.I.
|
|
1999
|
197 |
3 |
p. 702-706
5 p.
|
artikel
|
| 32 |
Investigations on the effect of contacts on p-type CdTe DLTS-measurements
|
Scholz, K
|
|
1999
|
197 |
3 |
p. 586-592
7 p.
|
artikel
|
| 33 |
Isotopically pure ZnSe crystals grown from the vapor
|
Lauck, R.
|
|
1999
|
197 |
3 |
p. 513-516
4 p.
|
artikel
|
| 34 |
IV group dopant compensation effect in CdTe
|
Panchuk, O
|
|
1999
|
197 |
3 |
p. 607-611
5 p.
|
artikel
|
| 35 |
Laser emission in HgCdTe in the 2–3.5μm range
|
Bleuse, Joël
|
|
1999
|
197 |
3 |
p. 529-536
8 p.
|
artikel
|
| 36 |
Low-pressure synthesis and Bridgman growth of Hg1−x Mn x Te
|
Reig, C.
|
|
1999
|
197 |
3 |
p. 688-693
6 p.
|
artikel
|
| 37 |
Low resistive ZnSe substrates
|
Lemasson, P.
|
|
1999
|
197 |
3 |
p. 462-465
4 p.
|
artikel
|
| 38 |
Magneto-optical studies of quaternary diluted magnetic semiconductors
|
Bryja, L.
|
|
1999
|
197 |
3 |
p. 694-697
4 p.
|
artikel
|
| 39 |
Materials aspects of CdTe/CdS solar cells
|
Durose, K.
|
|
1999
|
197 |
3 |
p. 733-742
10 p.
|
artikel
|
| 40 |
Negatively charged exciton formation in an asymmetric double CdTe/(Cd,Mn)Te QWs
|
Siviniant, J
|
|
1999
|
197 |
3 |
p. 680-683
4 p.
|
artikel
|
| 41 |
Numeric simulation of vertical Bridgman growth of Cd1−x Zn xTe melts
|
Lakeenkov, V.M.
|
|
1999
|
197 |
3 |
p. 443-448
6 p.
|
artikel
|
| 42 |
Optical transmission of ZnSe crystals grown by solid phase recrystallization
|
Rzepka, E
|
|
1999
|
197 |
3 |
p. 480-484
5 p.
|
artikel
|
| 43 |
Parameters of substrates–single crystals of ZnTe and Cd1−x Zn x Te (x<0.25), obtained by physical vapor transport technique (PVT)
|
Mycielski, A
|
|
1999
|
197 |
3 |
p. 423-426
4 p.
|
artikel
|
| 44 |
Photo and X-ray sensitive heterostructures based on cadmium telluride
|
Ciach, R.
|
|
1999
|
197 |
3 |
p. 675-679
5 p.
|
artikel
|
| 45 |
Point defect characterization of Zn- and Cd-based semiconductors using positron lifetime spectroscopy
|
Tessaro, G.
|
|
1999
|
197 |
3 |
p. 581-585
5 p.
|
artikel
|
| 46 |
Preparation of (001) ZnSe surfaces for homoepitaxy
|
Storm, S.
|
|
1999
|
197 |
3 |
p. 517-522
6 p.
|
artikel
|
| 47 |
Pre-transition phenomena in CdTe near the melting point
|
Shcherbak, L
|
|
1999
|
197 |
3 |
p. 397-405
9 p.
|
artikel
|
| 48 |
Recent developments in II–VI substrates
|
Sato, K
|
|
1999
|
197 |
3 |
p. 413-422
10 p.
|
artikel
|
| 49 |
Resistivity simulation of CZT materials
|
Zumbiehl, A
|
|
1999
|
197 |
3 |
p. 670-674
5 p.
|
artikel
|
| 50 |
Scanning force microscopy and electron microscopy studies of pulsed laser deposited ZnO thin films: application to the bulk acoustic waves (BAW) devices
|
Verardi, P
|
|
1999
|
197 |
3 |
p. 523-528
6 p.
|
artikel
|
| 51 |
Seedless THM growth of Cd x Hg1−x Te (x≈0.2) single crystals within rotating magnetic field
|
Senchenkov, A.S
|
|
1999
|
197 |
3 |
p. 552-556
5 p.
|
artikel
|
| 52 |
Spectroscopic characterization of photorefractive CdTe:Ge
|
Briat, B.
|
|
1999
|
197 |
3 |
p. 724-728
5 p.
|
artikel
|
| 53 |
State of the art and prospects of photorefractive CdTe
|
Marfaing, Y.
|
|
1999
|
197 |
3 |
p. 707-717
11 p.
|
artikel
|
| 54 |
State of the art of (Cd,Zn)Te as gamma detector
|
Fiederle, M.
|
|
1999
|
197 |
3 |
p. 635-640
6 p.
|
artikel
|
| 55 |
Stoichiometry and impurity concentrations in II–VI compounds measured by elastic recoil detection analysis (ERDA)
|
Birkholz, M.
|
|
1999
|
197 |
3 |
p. 571-575
5 p.
|
artikel
|
| 56 |
Structural properties of MOVPE-grown ZnSe studied by X-ray diffractometry, atomic force microscopy and electron microscopy
|
Liu, Q
|
|
1999
|
197 |
3 |
p. 507-512
6 p.
|
artikel
|
| 57 |
Structure defects and phase transition in tellurium-doped ZnSe crystals
|
Atroshchenko, L.V.
|
|
1999
|
197 |
3 |
p. 475-479
5 p.
|
artikel
|
| 58 |
Study of the chemically activated sublimation of ZnSe
|
Mora-Seró, Ivan
|
|
1999
|
197 |
3 |
p. 497-503
7 p.
|
artikel
|
| 59 |
Substrate/layer relationships in II–VIs
|
Irvine, S.J.C.
|
|
1999
|
197 |
3 |
p. 616-625
10 p.
|
artikel
|
| 60 |
Sulphur diffusion in CdTe and the phase diagram of the CdS–CdTe pseudo-binary alloy
|
Lane, D.W.
|
|
1999
|
197 |
3 |
p. 743-748
6 p.
|
artikel
|
| 61 |
The use of semiconductor scintillation crystals AIIBVI in radiation instruments
|
Ryzhikov, V
|
|
1999
|
197 |
3 |
p. 655-658
4 p.
|
artikel
|
| 62 |
Vapor pressure scanning implications of CdTe crystal growth
|
Greenberg, Jacob H.
|
|
1999
|
197 |
3 |
p. 406-412
7 p.
|
artikel
|
| 63 |
Vapour growth and doping of ZnSe single crystals
|
Korostelin, Yu.V
|
|
1999
|
197 |
3 |
p. 449-454
6 p.
|
artikel
|
| 64 |
Zinc segregation in HPB grown nuclear detector grade Cd1−x Zn x Te
|
Fougères, P.
|
|
1999
|
197 |
3 |
p. 641-645
5 p.
|
artikel
|
| 65 |
Zn concentration determination in CdZnTe by NIR spectroscopy
|
Maxey, C.D.
|
|
1999
|
197 |
3 |
p. 427-434
8 p.
|
artikel
|
Tijdschrift beschrijving