| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical studies on the crystal-melt interface shape in the Czochralski process
|
Jeong, Ja Hoon
|
|
1997
|
177 |
3-4 |
p. 303-314
12 p.
|
artikel
|
| 2 |
Author index
|
|
|
1997
|
177 |
3-4 |
p. 315-318
4 p.
|
artikel
|
| 3 |
Crystal structure of LPE-grown LiNbO3 epitaxial films
|
Kaigawa, Kazuyuki
|
|
1997
|
177 |
3-4 |
p. 217-225
9 p.
|
artikel
|
| 4 |
Fluorine as a shallow acceptor in ZnSe
|
Sim, E.D.
|
|
1997
|
177 |
3-4 |
p. 185-190
6 p.
|
artikel
|
| 5 |
Formation of structural defects during non-coherent nucleation: An atomistic analysis
|
Kozlov, Valentin M.
|
|
1997
|
177 |
3-4 |
p. 289-295
7 p.
|
artikel
|
| 6 |
Growth kinetics and morphology of mercuric iodide crystals grown by physical vapor transport
|
Nason, D.
|
|
1997
|
177 |
3-4 |
p. 265-274
10 p.
|
artikel
|
| 7 |
Growth of stoichiometric LiNbO3 single crystals by top seeded solution growth method
|
Polgár, K.
|
|
1997
|
177 |
3-4 |
p. 211-216
6 p.
|
artikel
|
| 8 |
Initial growth behaviors of disk-shaped mesas in GaAs molecular beam epitaxy on GaAs(111)B substrates
|
Shen, X.Q.
|
|
1997
|
177 |
3-4 |
p. 175-180
6 p.
|
artikel
|
| 9 |
Large grained polycrystalline silicon films by solid phase crystallization of phosphorus-doped amorphous silicon
|
Bergmann, Ralf B.
|
|
1997
|
177 |
3-4 |
p. 191-195
5 p.
|
artikel
|
| 10 |
Low-temperature growth of GaN films on GaAs(1 0 0) substrates by hot plasma chemical vapor deposition
|
Wang, Jie
|
|
1997
|
177 |
3-4 |
p. 181-184
4 p.
|
artikel
|
| 11 |
Lysozyme solubility in H2O and D2O solutions: a simple relationship
|
Gripon, C.
|
|
1997
|
177 |
3-4 |
p. 238-247
10 p.
|
artikel
|
| 12 |
Measurement of the velocity of crystallization and melting by means of a pressure relaxation process
|
Gans, Wigbert
|
|
1997
|
177 |
3-4 |
p. 275-280
6 p.
|
artikel
|
| 13 |
Morphological instability and supersaturation threshold pull rates in float-zone traveling solvent crystal growth of LaB6
|
Louchev, Oleg A.
|
|
1997
|
177 |
3-4 |
p. 226-237
12 p.
|
artikel
|
| 14 |
Numerical analysis for the application of radiative reflectors to vertical Bridgman growth configurations
|
Hahn, S.H.
|
|
1997
|
177 |
3-4 |
p. 296-302
7 p.
|
artikel
|
| 15 |
Prediction of average spacing for constrained cellular/dendritic growth
|
Ding, Guolu
|
|
1997
|
177 |
3-4 |
p. 281-288
8 p.
|
artikel
|
| 16 |
Repeated nucleation in an undercooled aluminum droplet
|
Uttormark, M.J.
|
|
1997
|
177 |
3-4 |
p. 258-264
7 p.
|
artikel
|
| 17 |
Subject index
|
|
|
1997
|
177 |
3-4 |
p. 319-320
2 p.
|
artikel
|
| 18 |
Transport phenomena in a high pressure crystal growth system: In situ synthesis for InP melt
|
Zhang, H.
|
|
1997
|
177 |
3-4 |
p. 196-206
11 p.
|
artikel
|
| 19 |
Vaterite growth and dissolution in aqueous solution III. Kinetics of transformation
|
Kralj, Damir
|
|
1997
|
177 |
3-4 |
p. 248-257
10 p.
|
artikel
|
| 20 |
X-ray and spectral characterization of defects in garnets
|
Lupei, A.
|
|
1997
|
177 |
3-4 |
p. 207-210
4 p.
|
artikel
|
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