| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A study of surface cross-hatch and misfit dislocation structure in In 0.15 Ga 0.85 As GaAs grown by chemical beam epitaxy
|
Beanland, R.
|
|
1995
|
149 |
1-2 |
p. 1-11
11 p.
|
artikel
|
| 2 |
Characterization of 100 mm diameter CdZnTe single crystals grown by the vertical gradient freezing method
|
Asahi, T.
|
|
1995
|
149 |
1-2 |
p. 23-29
7 p.
|
artikel
|
| 3 |
Editorial Board
|
|
|
1995
|
149 |
1-2 |
p. ii-
1 p.
|
artikel
|
| 4 |
Effect of antimony-doping on the oxygen segregation coefficient in silicon crystal growth
|
Huang, Xinming
|
|
1995
|
149 |
1-2 |
p. 59-63
5 p.
|
artikel
|
| 5 |
Growth layers I. Derivation of F-slices illustrated by sodium oxalate
|
Strom, C.S.
|
|
1995
|
149 |
1-2 |
p. 96-106
11 p.
|
artikel
|
| 6 |
Growth layers II. Comparison of theoretical and experimental morphology of sodium oxalate
|
Strom, C.S.
|
|
1995
|
149 |
1-2 |
p. 107-112
6 p.
|
artikel
|
| 7 |
Growth, morphology and superconducting properties of TmBa2Cu3O7−x single crystals
|
Voronkova, V.I.
|
|
1995
|
149 |
1-2 |
p. 74-79
6 p.
|
artikel
|
| 8 |
Growth of GaAs by molecular-beam epitaxy using trisdimethylaminoarsine
|
Goto, S.
|
|
1995
|
149 |
1-2 |
p. 143-146
4 p.
|
artikel
|
| 9 |
Impurity effect of chromium(III) on the growth and dissolution rates of potassium sulfate cyrstals
|
Kubota, Noriaki
|
|
1995
|
149 |
1-2 |
p. 113-119
7 p.
|
artikel
|
| 10 |
Increase of overlayer critical thickness by off-angled substrates
|
Tabuchi, Masao
|
|
1995
|
149 |
1-2 |
p. 12-16
5 p.
|
artikel
|
| 11 |
Kinetic self-stabilization of a stepped interface: growth into a supercooled melt
|
Chernov, A.A.
|
|
1995
|
149 |
1-2 |
p. 120-130
11 p.
|
artikel
|
| 12 |
Liquid phase epitaxial growth of elastically strained In x Ga1−x P and In xGa1−xAsyP1−yP solid solutions on GaAs substrates
|
Bolkhovityanov, Yu.B.
|
|
1995
|
149 |
1-2 |
p. 17-22
6 p.
|
artikel
|
| 13 |
Measurement of the float-zone interface shape for lithium niobate
|
Chen, Jyh-Chen
|
|
1995
|
149 |
1-2 |
p. 87-95
9 p.
|
artikel
|
| 14 |
Molecular dynamics simulation of crystal growth in Si 1−x Ge x Si (100) heterostructures
|
Yu, Qiuming
|
|
1995
|
149 |
1-2 |
p. 45-58
14 p.
|
artikel
|
| 15 |
Onset of double-diffusive convection of unidirectionally solidifying binary solution with variable viscosity
|
Lu, Jay W.
|
|
1995
|
149 |
1-2 |
p. 131-140
10 p.
|
artikel
|
| 16 |
Preparation of KTa0.65Nb0.35O3 thin films by a sol-gel process
|
Kuang, A.X.
|
|
1995
|
149 |
1-2 |
p. 80-86
7 p.
|
artikel
|
| 17 |
p-Type nitrogen doped ZnSe epilayers by ionized cluster beam epitaxy
|
Feng, Jia You
|
|
1995
|
149 |
1-2 |
p. 30-34
5 p.
|
artikel
|
| 18 |
The effect of refraction in reflection high-energy electron diffraction
|
Griesche, J.
|
|
1995
|
149 |
1-2 |
p. 141-142
2 p.
|
artikel
|
| 19 |
The effects of substrate surface steps on the microstructure of epitaxial Ba2YCu3O7−x thin films on (001) LaAlO3
|
McIntyre, P.C.
|
|
1995
|
149 |
1-2 |
p. 64-73
10 p.
|
artikel
|
| 20 |
Unsteady thermoelastic analysis of dislocation generation during Czochralski crystal growth
|
Hwang, Chi-Chuan
|
|
1995
|
149 |
1-2 |
p. 147-152
6 p.
|
artikel
|
| 21 |
Vapor phase epitaxy of Hg1−x Cd xTe on CdTe heteroepitaxial substrates
|
Sochinskii, N.V.
|
|
1995
|
149 |
1-2 |
p. 35-44
10 p.
|
artikel
|
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