| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Amphoteric behaviour of germanium during liquid phase epitaxy of GaAs from bismuth-gallium melts
|
Yakusheva, N.A.
|
|
1992
|
123 |
3-4 |
p. 479-486
8 p.
|
artikel
|
| 2 |
Anisotropic growth of LiNbO3 crystal as revealed by high temperature in situ observation
|
Jin, Weiqing
|
|
1992
|
123 |
3-4 |
p. 327-332
6 p.
|
artikel
|
| 3 |
A novel method of crystal growth by physical vapour transport and its application to CdTe
|
Grasza, K.
|
|
1992
|
123 |
3-4 |
p. 519-528
10 p.
|
artikel
|
| 4 |
A semi-empirical model for the complete orientation dependence of the growth rate for vapor phase epitaxy: chloride VPE of GaAs
|
Seidel-Salinas, L.K.
|
|
1992
|
123 |
3-4 |
p. 575-586
12 p.
|
artikel
|
| 5 |
A study on growth of β-BaB2O4 crystals
|
Tang, D.Y.
|
|
1992
|
123 |
3-4 |
p. 445-450
6 p.
|
artikel
|
| 6 |
Author index
|
|
|
1992
|
123 |
3-4 |
p. 619-623
5 p.
|
artikel
|
| 7 |
Capture of inclusions during Czochralski growth of lead germanate and gadolinium molybdate crystals
|
Bunkin, A.Yu.
|
|
1992
|
123 |
3-4 |
p. 459-464
6 p.
|
artikel
|
| 8 |
Chemistry of photo-assisted organometallic vapor-phase epitaxy of cadnium telluride
|
Liu, Baichen
|
|
1992
|
123 |
3-4 |
p. 500-518
19 p.
|
artikel
|
| 9 |
Composition-controlled growth of PbTiO3 on SrTiO3 by organometallic chemical vapour deposition
|
Dormans, G.J.M.
|
|
1992
|
123 |
3-4 |
p. 537-544
8 p.
|
artikel
|
| 10 |
Conversion of superconducting Bi-system single crystals from 2212 to 2223 by the annealing method
|
Inoue, T.
|
|
1992
|
123 |
3-4 |
p. 615-618
4 p.
|
artikel
|
| 11 |
Diffusion of As and Sb in HgCdTe
|
Bubulac, L.O.
|
|
1992
|
123 |
3-4 |
p. 555-566
12 p.
|
artikel
|
| 12 |
Doping and impurity-vacancy complex formation during vapour-phase epitaxy of gallium arsenide
|
Bobrovnikova, I.A.
|
|
1992
|
123 |
3-4 |
p. 529-536
8 p.
|
artikel
|
| 13 |
Effect of ZrO2 addition on FZ growth of rutile single crystals
|
Higuchi, Mikio
|
|
1992
|
123 |
3-4 |
p. 495-499
5 p.
|
artikel
|
| 14 |
Flow regime map and deposition rate uniformity in vertical rotating-disk OMVPE reactors
|
Biber, Catharina R.
|
|
1992
|
123 |
3-4 |
p. 545-554
10 p.
|
artikel
|
| 15 |
Growth and microstructure of epitaxial 45°-rotated bcc W layers on NaCl-structure MgO(001) substrates and TiN(001) buffer layers
|
Kimura, H.
|
|
1992
|
123 |
3-4 |
p. 344-356
13 p.
|
artikel
|
| 16 |
Growth mechanism for (11n) orientations in Bi-Sr-Ca-Cu-O thin films
|
Ishizuka, Yoshiki
|
|
1992
|
123 |
3-4 |
p. 357-365
9 p.
|
artikel
|
| 17 |
Growth rate dispersion in small crystals and its relation to mosaic spread
|
Harding, M.M.
|
|
1992
|
123 |
3-4 |
p. 373-384
12 p.
|
artikel
|
| 18 |
Improved analysis of tip undercooling in cellular solidification of a binary alloy
|
Billia, B.
|
|
1992
|
123 |
3-4 |
p. 399-410
12 p.
|
artikel
|
| 19 |
Initial stage of epitaxial growth at low temperature of GaAs and AlAs on Si by atomic layer molecular beam epitaxy (ALMBE) and MBE
|
González, Y.
|
|
1992
|
123 |
3-4 |
p. 385-392
8 p.
|
artikel
|
| 20 |
Instructions to contributors
|
|
|
1992
|
123 |
3-4 |
p. 627-
1 p.
|
artikel
|
| 21 |
Large needle-shaped highly conducting organic charge transfer complexes with asymmetric donor molecules
|
Singh, Yadunath
|
|
1992
|
123 |
3-4 |
p. 601-604
4 p.
|
artikel
|
| 22 |
Liquid phase epitaxial growth of AlGaAsSb on GaSb
|
Lazzari, J.L.
|
|
1992
|
123 |
3-4 |
p. 465-478
14 p.
|
artikel
|
| 23 |
Liquid phase epitaxy of YBa2Cu3O7−x on NdGaO3 and LaGaO3 substrates
|
Dubs, C.
|
|
1992
|
123 |
3-4 |
p. 611-614
4 p.
|
artikel
|
| 24 |
Low temperature MOVPE growth of ZnSe with ditertiarybutylselenide
|
Kuhn, W.
|
|
1992
|
123 |
3-4 |
p. 605-610
6 p.
|
artikel
|
| 25 |
Mechanism of arsenic incorporation growth of gallium arsenide on gallium-covered surfaces
|
Sugiyama, Naoharu
|
|
1992
|
123 |
3-4 |
p. 393-398
6 p.
|
artikel
|
| 26 |
Morphology of C60 decagonal crystals grown from n-hexane
|
Agafonov, V.
|
|
1992
|
123 |
3-4 |
p. 366-372
7 p.
|
artikel
|
| 27 |
Numerical simulation of a 3D Czochralski-melt flow by a finite volume multigrid-algorithm
|
Leister, Hans-Jörg
|
|
1992
|
123 |
3-4 |
p. 567-574
8 p.
|
artikel
|
| 28 |
Observation of twinning in diamond CVD films
|
Marciniak, W.
|
|
1992
|
123 |
3-4 |
p. 587-593
7 p.
|
artikel
|
| 29 |
Preparation of starting materials of β-BaB2O4 by zone melting
|
Katsumata, T.
|
|
1992
|
123 |
3-4 |
p. 597-600
4 p.
|
artikel
|
| 30 |
p-Type conductivity in ZnSe
|
Krasnov, A.N.
|
|
1992
|
123 |
3-4 |
p. 594-596
3 p.
|
artikel
|
| 31 |
Sr x Ba1−x Nb2O6 single crystal fibers: dependence of crystal quality on growth parameters
|
Yamamoto, Joyce K.
|
|
1992
|
123 |
3-4 |
p. 423-435
13 p.
|
artikel
|
| 32 |
Stacking fault stability in GaAs/Si hetero-epitaxial growth
|
Kim, Sam-Dong
|
|
1992
|
123 |
3-4 |
p. 439-444
6 p.
|
artikel
|
| 33 |
Subject index
|
|
|
1992
|
123 |
3-4 |
p. 624-626
3 p.
|
artikel
|
| 34 |
Surface chemistry of new As precursors for MOVPE and MOMBE: phenylarsine and tertiarybutylarsine on GaAs(100)
|
Kaul, P.
|
|
1992
|
123 |
3-4 |
p. 411-422
12 p.
|
artikel
|
| 35 |
The appearance of molecular roughness on the {111} face of adamantane
|
Iwanov, D.
|
|
1992
|
123 |
3-4 |
p. 436-438
3 p.
|
artikel
|
| 36 |
The characteristics of strain-modulated surface undulations formed upon epitaxial Si1−x Ge x alloy layers on Si
|
Cullis, A.G.
|
|
1992
|
123 |
3-4 |
p. 333-343
11 p.
|
artikel
|
| 37 |
The In x Ga1−x As yP1−y (0.53<x<1,0<y<1) compound semiconductor for LD structures by organometallic vapor-phase epitaxy
|
Lin, Wei
|
|
1992
|
123 |
3-4 |
p. 451-458
8 p.
|
artikel
|
| 38 |
Trimethylamine alane for MOVPE of AlGaAs and vertical-cavity surface-emitting laser structures
|
Schneider Jr., R.P.
|
|
1992
|
123 |
3-4 |
p. 487-494
8 p.
|
artikel
|
Tijdschrift beschrijving