| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of MOCVD of GaAs on patterned substrates
|
Coronell, Daniel G.
|
|
1991
|
114 |
4 |
p. 581-592
12 p.
|
artikel
|
| 2 |
Author index
|
|
|
1991
|
114 |
4 |
p. 727-731
5 p.
|
artikel
|
| 3 |
β-BaB2O4 single crystal growth by Czochralski method. II
|
Kouta, H.
|
|
1991
|
114 |
4 |
p. 676-682
7 p.
|
artikel
|
| 4 |
Calculation of the compositional variation-slope of In1-x Ga xAs grown from In-Ga-As solution by ramp-cooling
|
Nakajima, Kazuo
|
|
1991
|
114 |
4 |
p. 633-639
7 p.
|
artikel
|
| 5 |
CBr4 vapor growth morphologies near the polymorphic transition point II. Crystals with large-angle grain boundaries
|
Xiao, Rong-Fu
|
|
1991
|
114 |
4 |
p. 549-560
12 p.
|
artikel
|
| 6 |
CBr4 vapor growth morphologies near the polymorphic transition point I. single crystals
|
Xiao, Rong-Fu
|
|
1991
|
114 |
4 |
p. 536-548
13 p.
|
artikel
|
| 7 |
Dendritic crystal growth in supercooled melt
|
Tarabaev, L.P.
|
|
1991
|
114 |
4 |
p. 603-612
10 p.
|
artikel
|
| 8 |
Effects of rotation on heat transfer, fluid flow and interfaces in normal gravity floating-zone crystal growth
|
Lan, C.W.
|
|
1991
|
114 |
4 |
p. 517-535
19 p.
|
artikel
|
| 9 |
Elastic distortions of strained layers grown epitaxially in arbitrary directions
|
Anastassakis, E.
|
|
1991
|
114 |
4 |
p. 647-655
9 p.
|
artikel
|
| 10 |
Evolution of 3D growth patterns on nonplanar substrates
|
Böckenhoff, E.
|
|
1991
|
114 |
4 |
p. 619-632
14 p.
|
artikel
|
| 11 |
Heteroepitaxial lateral overgrowth of Ge x Si1−x over SiO2/Si structures by liquid phase epitaxy
|
Hansson, P.O.
|
|
1991
|
114 |
4 |
p. 573-580
8 p.
|
artikel
|
| 12 |
High resolution X-ray diffraction imaging of lead tin telluride
|
Steiner, Bruce
|
|
1991
|
114 |
4 |
p. 707-714
8 p.
|
artikel
|
| 13 |
Instructions to contributors
|
|
|
1991
|
114 |
4 |
p. 735-
1 p.
|
artikel
|
| 14 |
Interface shape and crystallinity in LEC GaAs
|
Tower, J.P.
|
|
1991
|
114 |
4 |
p. 665-675
11 p.
|
artikel
|
| 15 |
Liquid phase epitaxial growth of PbSe on (111) and (100) BaF2
|
McCann, Patrick J.
|
|
1991
|
114 |
4 |
p. 687-692
6 p.
|
artikel
|
| 16 |
Low pressure metalorganic chemical vapor deposition of InGaP using tertiarybutylphosphine
|
Kawakyu, Yoshito
|
|
1991
|
114 |
4 |
p. 561-564
4 p.
|
artikel
|
| 17 |
Metastable crystal growth of the low temperature phase of barium metaborate from the melt
|
Kôzuki, Yasushi
|
|
1991
|
114 |
4 |
p. 683-686
4 p.
|
artikel
|
| 18 |
Morphological defects on Be-doped AlGaAs layers grown by MBE
|
Liu, Wen-Chau
|
|
1991
|
114 |
4 |
p. 700-706
7 p.
|
artikel
|
| 19 |
Numerical simulation of molten silicon flow; comparison with experiment
|
Kakimoto, Koichi
|
|
1991
|
114 |
4 |
p. 715-725
11 p.
|
artikel
|
| 20 |
On the problem of radial segregation in an idealized horizontal Bridgman configuration: scaling and numerical approaches
|
Garandet, J.P.
|
|
1991
|
114 |
4 |
p. 593-602
10 p.
|
artikel
|
| 21 |
On wetting and apparently asymmetric kinetics in free growth
|
Géminard, J.C.
|
|
1991
|
114 |
4 |
p. 640-646
7 p.
|
artikel
|
| 22 |
Precipitation of calcium phosphate at 40° C from neutral solution
|
Lundager Madsen, Hans E.
|
|
1991
|
114 |
4 |
p. 613-618
6 p.
|
artikel
|
| 23 |
Strain induced 2D–3D growth mode transition in molecular beam epitaxy of In x Ga1t-xAs on GaAs (001)
|
Marti Ceschin, A.
|
|
1991
|
114 |
4 |
p. 693-699
7 p.
|
artikel
|
| 24 |
Subject index
|
|
|
1991
|
114 |
4 |
p. 732-734
3 p.
|
artikel
|
| 25 |
Thermochemical etching effect of H2O vapor on CVD diamond film
|
Uchida, Nozomu
|
|
1991
|
114 |
4 |
p. 565-568
4 p.
|
artikel
|
| 26 |
7th international conference on molecular beam epitaxy (MBE-VII)
|
|
|
1991
|
114 |
4 |
p. 726-
1 p.
|
artikel
|
| 27 |
TSZM growth of β-BaB2O4 crystals
|
Oude Hengel, R.
|
|
1991
|
114 |
4 |
p. 656-660
5 p.
|
artikel
|
| 28 |
T(z) diagram of the Mn3z In2(1-z)Te3 system in the range 0 < z < 0.7
|
Quintero, M.
|
|
1991
|
114 |
4 |
p. 661-664
4 p.
|
artikel
|
| 29 |
X-ray diffraction analysis of superlattices grown on misoriented substrates
|
Ravila, P.
|
|
1991
|
114 |
4 |
p. 569-572
4 p.
|
artikel
|
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