nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
An analysis of the characteristics of crystal growth from solution under microgravity
|
Hou, Chongru |
|
1991 |
114 |
3 |
p. 486-496 11 p. |
artikel |
2 |
An approach to the growth of YBa2Cu3O7-x single crystals by the flux method. II
|
Watanabe, Koichi |
|
1991 |
114 |
3 |
p. 269-278 10 p. |
artikel |
3 |
Composition interdiffusion in Hg1-xCdxTe annealed with Cd-Hg source
|
Jianrong, Yang |
|
1991 |
114 |
3 |
p. 351-356 6 p. |
artikel |
4 |
Crystal growth of YBa2Cu3O7-x and reaction of gold crucible with Ba-Cu-rich flux
|
Tao, Y.K. |
|
1991 |
114 |
3 |
p. 279-282 4 p. |
artikel |
5 |
Crystallinity of heteroepitaxial GaAs layers grown on (Ca, Sr)F2/CaF2/Si(100) structures by molecular beam epitaxy
|
Minemura, Tetsuroh |
|
1991 |
114 |
3 |
p. 307-313 7 p. |
artikel |
6 |
Effect of convection on the microstructure of a lamellar eutectic growing with a stepped interface
|
Seth, Jayshree |
|
1991 |
114 |
3 |
p. 357-363 7 p. |
artikel |
7 |
Equality of the structural morphologies of ammonium nitrate (III) and barite, BaSO4
|
Hartman, P. |
|
1991 |
114 |
3 |
p. 497-499 3 p. |
artikel |
8 |
From wave function to crystal morphology: application to urea and alpha-glycine
|
Boek, E.S. |
|
1991 |
114 |
3 |
p. 389-410 22 p. |
artikel |
9 |
Growth and structural properties of quaternary copper thiostannates
|
Garbato, L. |
|
1991 |
114 |
3 |
p. 299-306 8 p. |
artikel |
10 |
Growth by molecular beam epitaxy of thick films of InxGa1-xAs (x ∼ 0.53) on Si(100) substrates
|
Westwood, D.I. |
|
1991 |
114 |
3 |
p. 346-350 5 p. |
artikel |
11 |
Growth of Sr0.61Ba0.39Nb2O6 fibers: new results regarding orientation
|
Wilde, Jeffrey P. |
|
1991 |
114 |
3 |
p. 500-506 7 p. |
artikel |
12 |
Growth of willemite, Zn2SiO4, single crystals from a Li2MoO4 solvent
|
Watanabe, Koichi |
|
1991 |
114 |
3 |
p. 373-379 7 p. |
artikel |
13 |
Influence of the nucleation and annealing conditions on the quality of InP layers grown on GaAs by MOCVD
|
Coudenys, Geert |
|
1991 |
114 |
3 |
p. 314-320 7 p. |
artikel |
14 |
Investigation of Zn diffusion in InP using dimethylzinc as Zn source
|
Wada, M. |
|
1991 |
114 |
3 |
p. 321-326 6 p. |
artikel |
15 |
Laser melting of thin silicon films
|
Brush, L.N. |
|
1991 |
114 |
3 |
p. 446-466 21 p. |
artikel |
16 |
Measurement and analysis of grain boundary grooving by volume diffusion
|
Hardy, S.C. |
|
1991 |
114 |
3 |
p. 467-480 14 p. |
artikel |
17 |
Modelling of the dynamics of HgCdTe growth by the vertical Bridgman method
|
Hyun Kim, Do |
|
1991 |
114 |
3 |
p. 411-434 24 p. |
artikel |
18 |
Molecular beam epitaxial growth and optical properties of strained rectangular and asymmetric triangular InGaAs quantum well structures
|
Droopad, R. |
|
1991 |
114 |
3 |
p. 327-336 10 p. |
artikel |
19 |
Narrow photoluminescence linewidth of quantum wells grown by gas source molecular beam epitaxy
|
Shiralagi, K.T. |
|
1991 |
114 |
3 |
p. 337-345 9 p. |
artikel |
20 |
OMCVD of cobalt and cobalt silicide
|
Dormans, G.J.M. |
|
1991 |
114 |
3 |
p. 364-372 9 p. |
artikel |
21 |
Reaction mechanism of producing barium hexaferrites from γ-Fe2O3 and Ba(OH)2 by hydrothermal method
|
Wang, Maw-Ling |
|
1991 |
114 |
3 |
p. 435-445 11 p. |
artikel |
22 |
Real-time measurement of LPE growth rate in GaP
|
Inatomi, Y. |
|
1991 |
114 |
3 |
p. 380-388 9 p. |
artikel |
23 |
Selective OMVPE of GaInAs and InP using a polycrystalline InP mask
|
Caneau, C. |
|
1991 |
114 |
3 |
p. 481-485 5 p. |
artikel |
24 |
Solute transport mechanism during liquid phase epitaxial (LPE) growth with an applied current
|
Takenaka, Chisato |
|
1991 |
114 |
3 |
p. 293-298 6 p. |
artikel |
25 |
Synthesis of bulk YBa2Cu3O7-x by melt-spun texture growth (MSTG)
|
Zhou, G.F. |
|
1991 |
114 |
3 |
p. 283-285 3 p. |
artikel |
26 |
Thermodynamic modeling of MOCVD of Bi2Sr2CaCu2O8+x: influence of metal and oxygen source
|
Hårsta, Anders |
|
1991 |
114 |
3 |
p. 507-516 10 p. |
artikel |
27 |
The solubility of the tetragonal form of hen egg white lysozyme from pH 4.0 to 5.4
|
Cacioppo, Elizabeth |
|
1991 |
114 |
3 |
p. 286-292 7 p. |
artikel |