| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new approach to corona needle growth based on geometrical and structural analyses
|
Okuyama, F.
|
|
1991
|
114 |
1-2 |
p. 107-117
11 p.
|
artikel
|
| 2 |
A new approach to crystal growth of Hg1−x Cd xTe by the travelling heater method (THM)
|
Gille, P.
|
|
1991
|
114 |
1-2 |
p. 77-86
10 p.
|
artikel
|
| 3 |
Buoyancy effects of a growing, isolated dendrite
|
Canright, D.
|
|
1991
|
114 |
1-2 |
p. 153-185
33 p.
|
artikel
|
| 4 |
Colour illustrations
|
|
|
1991
|
114 |
1-2 |
p. 1-2
2 p.
|
artikel
|
| 5 |
Crystal growth of superconducting (Eu,Ce)2(Ba,Eu)2Cu3O8+z
|
Tajima, S.
|
|
1991
|
114 |
1-2 |
p. 59-63
5 p.
|
artikel
|
| 6 |
Crystallization of brushite from EDTA-chelated calcium in agar gels
|
Plovnick, Ross H.
|
|
1991
|
114 |
1-2 |
p. 22-26
5 p.
|
artikel
|
| 7 |
Crystallization of calcium oxalate in the presence of dodecylammonium chloride
|
S̆krtić, D.
|
|
1991
|
114 |
1-2 |
p. 118-126
9 p.
|
artikel
|
| 8 |
Defects of lithium niobate crystals heavily doped with MgO
|
Hu, L.J.
|
|
1991
|
114 |
1-2 |
p. 191-197
7 p.
|
artikel
|
| 9 |
Detection and characterization of microdefects and microprecipitates in Si wafers by Brewster angle illumination using an optical fiber system
|
Taijing, Lu
|
|
1991
|
114 |
1-2 |
p. 64-70
7 p.
|
artikel
|
| 10 |
Detection of compound formation at the ZnSe/GaAs interface using high resolution transmission electron microscopy (HRTEM)
|
Wright, A.C.
|
|
1991
|
114 |
1-2 |
p. 99-106
8 p.
|
artikel
|
| 11 |
Directional solidification of Pb—Sn eutectic with vibration
|
Caram, Rubens
|
|
1991
|
114 |
1-2 |
p. 249-254
6 p.
|
artikel
|
| 12 |
Editorial Board
|
|
|
1991
|
114 |
1-2 |
p. ii-
1 p.
|
artikel
|
| 13 |
Electronic measurement of concentration gradient around a crystal growing from a solution by using Mach—Zehnder interferometer
|
Mantani, Masayuki
|
|
1991
|
114 |
1-2 |
p. 71-76
6 p.
|
artikel
|
| 14 |
Erratum
|
|
|
1991
|
114 |
1-2 |
p. 267-
1 p.
|
artikel
|
| 15 |
Fundamental considerations in creep-based determination of dislocation density in semiconductors grown from the melt
|
Motakef, Shahryar
|
|
1991
|
114 |
1-2 |
p. 47-58
12 p.
|
artikel
|
| 16 |
Growth mechanism of YBa2Cu3O7−δ thin films on vicinal MgO
|
Norton, M.Grant
|
|
1991
|
114 |
1-2 |
p. 258-263
6 p.
|
artikel
|
| 17 |
Growth of KTiOPO4 (KTP) single crystals by means of phosphate and phosphate/sulfate fluxes out of a three-zone furnace
|
Bolt, R.J.
|
|
1991
|
114 |
1-2 |
p. 141-152
12 p.
|
artikel
|
| 18 |
Growth of large YBa2Cu3O7−x crystals in the presence of a temperature gradient
|
Gagnon, R.
|
|
1991
|
114 |
1-2 |
p. 186-190
5 p.
|
artikel
|
| 19 |
Growth of thin film crystals of monochloro(meso-tetraphenylporphyrinato) gallium by organic MBE
|
Tanigaki, Katsumi
|
|
1991
|
114 |
1-2 |
p. 3-6
4 p.
|
artikel
|
| 20 |
Identification of dislocation etch pits in n-type GaAs by NIR transmission microscopy
|
Cao, X.Z.
|
|
1991
|
114 |
1-2 |
p. 255-257
3 p.
|
artikel
|
| 21 |
IOCG News — No. 12
|
|
|
1991
|
114 |
1-2 |
p. 264-266
3 p.
|
artikel
|
| 22 |
MgO-doping effects on the congruent composition of LiNbO3
|
Zhou, Yan-Fei
|
|
1991
|
114 |
1-2 |
p. 87-91
5 p.
|
artikel
|
| 23 |
Morphology and microstructure of YBa2Cu3O7 thin films on SrTiO3 single crystal by RF magnetron sputtering
|
Podkletnov, E.E.
|
|
1991
|
114 |
1-2 |
p. 198-202
5 p.
|
artikel
|
| 24 |
MOVPE growth of InP around reactive ion etched mesas
|
Nordell, N.
|
|
1991
|
114 |
1-2 |
p. 92-98
7 p.
|
artikel
|
| 25 |
Nucleation-controlled growth and normal growth: a unified view
|
Point, J.J.
|
|
1991
|
114 |
1-2 |
p. 228-238
11 p.
|
artikel
|
| 26 |
On the inherent stability of the Czochralski crystal growth process
|
Johansen, Tom H.
|
|
1991
|
114 |
1-2 |
p. 27-30
4 p.
|
artikel
|
| 27 |
Real time digital video image processing of in situ crystal growth
|
Vogels, L.J.P.
|
|
1991
|
114 |
1-2 |
p. 239-248
10 p.
|
artikel
|
| 28 |
Relaxation of elastic stresses in overlayed microcrystals
|
Trusov, L.I.
|
|
1991
|
114 |
1-2 |
p. 133-140
8 p.
|
artikel
|
| 29 |
Role of interface strain in atomic layer epitaxy growth kinetics of In x Ga1−x As
|
Sakuma, Y.
|
|
1991
|
114 |
1-2 |
p. 31-37
7 p.
|
artikel
|
| 30 |
Some problems related to the performance of an evaporator as a vapor delivery system
|
Middleman, Stanley
|
|
1991
|
114 |
1-2 |
p. 13-21
9 p.
|
artikel
|
| 31 |
Surface diffusion and sticking coefficient of adatoms to atomic steps during molecular beam epitaxy growth
|
Hata, Masayuki
|
|
1991
|
114 |
1-2 |
p. 203-208
6 p.
|
artikel
|
| 32 |
The microcrystalline nature of cubic, dendritic and granular salt
|
Davey, R.J.
|
|
1991
|
114 |
1-2 |
p. 7-12
6 p.
|
artikel
|
| 33 |
Tilting of lattice planes in InP epilayers grown on miscut GaAs substrates: the effect of initial growth conditions
|
Riesz, Ferenc
|
|
1991
|
114 |
1-2 |
p. 127-132
6 p.
|
artikel
|
| 34 |
X-ray and optical characterization of three growth morphologies of CVD diamond films
|
Specht, E.D.
|
|
1991
|
114 |
1-2 |
p. 38-46
9 p.
|
artikel
|
| 35 |
X-ray topographic studies and measurement of lattice parameter differences within synthetic diamonds grown by the reconstitution technique
|
Wierzchowski, W.
|
|
1991
|
114 |
1-2 |
p. 209-227
19 p.
|
artikel
|
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