| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Amidinates, guanidinates and iminopyrrolidinates: Understanding precursor thermolysis to design a better ligand
|
Barry, Seán T.
|
|
2013
|
257 |
23-24 |
p. 3192-3201
10 p.
|
artikel
|
| 2 |
Carbon-nanostructures coated/decorated by atomic layer deposition: Growth and applications
|
Marichy, Catherine
|
|
2013
|
257 |
23-24 |
p. 3232-3253
22 p.
|
artikel
|
| 3 |
CVD and ALD precursor design and application
|
Crutchley, Robert J.
|
|
2013
|
257 |
23-24 |
p. 3153-
1 p.
|
artikel
|
| 4 |
Editorial Board
|
|
|
2013
|
257 |
23-24 |
p. CO2-
1 p.
|
artikel
|
| 5 |
Energy-enhanced atomic layer deposition for more process and precursor versatility
|
Potts, S.E.
|
|
2013
|
257 |
23-24 |
p. 3254-3270
17 p.
|
artikel
|
| 6 |
Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials
|
Lee, Sang Woon
|
|
2013
|
257 |
23-24 |
p. 3154-3176
23 p.
|
artikel
|
| 7 |
Mechanisms and reactions during atomic layer deposition on polymers
|
Parsons, Gregory N.
|
|
2013
|
257 |
23-24 |
p. 3323-3331
9 p.
|
artikel
|
| 8 |
Mechanisms of surface reactions in thin solid film chemical deposition processes
|
Zaera, Francisco
|
|
2013
|
257 |
23-24 |
p. 3177-3191
15 p.
|
artikel
|
| 9 |
Metal ALD and pulsed CVD: Fundamental reactions and links with solution chemistry
|
Emslie, David J.H.
|
|
2013
|
257 |
23-24 |
p. 3282-3296
15 p.
|
artikel
|
| 10 |
Molecular precursor approach to metal oxide and pnictide thin films
|
Marchand, Peter
|
|
2013
|
257 |
23-24 |
p. 3202-3221
20 p.
|
artikel
|
| 11 |
‘Old Chemistries’ for new applications: Perspectives for development of precursors for MOCVD and ALD applications
|
Devi, Anjana
|
|
2013
|
257 |
23-24 |
p. 3332-3384
53 p.
|
artikel
|
| 12 |
Precursor design and reaction mechanisms for the atomic layer deposition of metal films
|
Bernal Ramos, Karla
|
|
2013
|
257 |
23-24 |
p. 3271-3281
11 p.
|
artikel
|
| 13 |
Precursors and chemistry for the atomic layer deposition of metallic first row transition metal films
|
Knisley, Thomas J.
|
|
2013
|
257 |
23-24 |
p. 3222-3231
10 p.
|
artikel
|
| 14 |
Precursors as enablers of ALD technology: Contributions from University of Helsinki
|
Hatanpää, Timo
|
|
2013
|
257 |
23-24 |
p. 3297-3322
26 p.
|
artikel
|
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