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Details van artikel 16 van 58 gevonden artikelen
| Titel: |
Deep Defects Annihilation in GaAs1-xNx Layers by Si-doping |
| Auteur: |
N. Ben Sedrine, A. Hamdouni, J. Rihani, S. Ben Bouzid, F. Bousbih R. Chtourou J.C. Harmand |
| Verschenen in: |
American journal of applied sciences |
| Paginering: | Jaargang 4 (2007) nr. 1 pagina's 19-22 |
| Jaar: |
2007 |
| Inhoud: |
The photoluminescence (PL) properties of Si-doped GaAs0.985N0.015 with differentsilicon content were investigated. The study was carried out on a set of three samples grown byMolecular Beam Epitaxy (MBE) on GaAs (001) oriented substrate using a radio frequencynitrogen beam source. For all samples, the PL measurements show the presence of a wide bandsituated at 0.83 eV which intensity decreases by increasing silicon content. This wide band wasattributed to the presence of deep localized states induced by a three-dimensional growth of theGaAsN layer. In addition, these deep localized states are annihilated by the free carriers fromsilicon atoms. PL measurements in the range of 10 to 300 K were also performed to identify theband gap energy of GaAs1-xNx structure. The decrease of the activation energies with increasingsilicon content was observed. |
| Uitgever: |
Science Publications (provided by DOAJ) |
| Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
Details van artikel 16 van 58 gevonden artikelen
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