SOLAR CELLS WITH 15.6% EFFICIENCY ON MULTICRYSTALLINE SILICON, USING IMPURITY GETTERING, BACK SURFACE FIELD AND EMITTER PASSIVATION
Titel:
SOLAR CELLS WITH 15.6% EFFICIENCY ON MULTICRYSTALLINE SILICON, USING IMPURITY GETTERING, BACK SURFACE FIELD AND EMITTER PASSIVATION
Auteur:
Nam, Le Quang Rodot, M. Ghannam, M. Coppye, J. de SCHEPPER, P. Nijs, J. Sarti, D. Perichaud, I. Martinuzzi, S.
Verschenen in:
International journal of sustainable energy
Paginering:
Jaargang 11 (1992) nr. 3-4 pagina's 273-279
Jaar:
1992
Inhoud:
Three features have been combined to raise the efficiency of solar cells made on industrial multicrystalline silicon wafers: 1) reduction of bulk recombination by a special gettering process, 2) reduction of back recombination by using a p/p+ junction, 3) reduction of front recombination by emitter back-etching and passivation. A conversion efficiency of 15.6% has been achieved on 2 × 2 cm2 solar cells. Spectral response measurements are used to identify the role of each processing parameter.