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                                       Details for article 7 of 15 found articles
 
 
  Low Temperature Process for Synthesis of (100) Textured Pb(Zr0.48Ti0.52)O3 Thin Films on Si Substrate by Laser Lift-Off Transferring Technique
 
 
Title: Low Temperature Process for Synthesis of (100) Textured Pb(Zr0.48Ti0.52)O3 Thin Films on Si Substrate by Laser Lift-Off Transferring Technique
Author: Chu, Ying-Hao
Lin, Su-Jien
Liu, Kuo-Shung
Lin, I-Nan
Appeared in: Integrated ferroelectrics
Paging: Volume 57 (2003) nr. 1 pages 1233-1240
Year: 2003
Contents: (100) textured Pb(Zr0.48Ti0.52)O3 (PZT) films were prepared on silicon substrates by MOD process and laser lift-off technique. Textured PZT films were first grown on (001) Sapphire substrate, using Ba(Mg1/3Ta2/3)O3 (BMT) materials as buffer layer. The (100) textured PZT/BMT/Sapphire films were attached to Si substrate using a transient-liquid-phase Pd-In bonding process, and then were separated from Sapphire substrates by a laser lift-off process, in which, a 38 ns pulse from excimer laser (248 nm) at 600 mJ/cm2 fluence melted BMT buffer layer, expelling the Sapphire. The crystallinity of the surface of films was further improved by laser annealing. X-ray diffraction analysis of the PZT films showed that the crystallographic structure of films is maintained during laser lift-off process. Electrical testing of the films after laser lift-off process followed by laser annealing demonstrated that the ferroelectric properties are retained for the transferred films (Pr = 9μ C/cm2 and Ec = 74 kV/cm).
Publisher: Taylor & Francis
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 7 of 15 found articles
 
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