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Details for article 3 of 15 found articles
| Title: |
Crystallization of Zr Based Oxide with Glass Forming Additives for Gate Dielectric Applications |
| Author: |
Kong, Seongho Jung, Daekyun Ahn, Jinho Kim, Jiyoung |
| Appeared in: |
Integrated ferroelectrics |
| Paging: | Volume 57 (2003) nr. 1 pages 1193-1200 |
| Year: |
2003 |
| Contents: |
In this study, Si, Al, and Bi have been investigated as a glass forming additive. Addition of glass forming materials is effective on stabilization of amorphous phase for Zr based films. The higher crystallization temperature results from the more additives. Addition of heavier atom is more effective on enhancing dielectric constant but results in lowering crystallization temperature. Addition of Si results in the most stable amorphous with significant reduction of dielectric constant. When the atomic ratio of Si over (Si + Zr) of about 0.55 is annealed at 950°C for 1 min, any crystallization behaviors are not noticed with dielectric constant of 12. On the other hand, addition of Al causes moderate improvement of crystallization behavior with small sacrifice of dielectric constant. The amorphous films of Zr1 - xAlxOy (X = 0.55) remain amorphous up to 800°C anneals with dielectric constant of 15. |
| Publisher: |
Taylor & Francis |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 15 found articles
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