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| Titel: |
Comparison of Hafnium Precursors for the MOCVD of HfO2 for Gate Dielectric Applications |
| Auteur: |
Teren, A. R. Ehrhart, P. Waser, R. He, J. Q. Jia, C. L. Schumacher, M. Lindner, J. Baumann, P. K. Leedham, T. J. Rushworth, S. R. Jones, A. C. |
| Verschenen in: |
Integrated ferroelectrics |
| Paginering: | Jaargang 57 (2003) nr. 1 pagina's 1163-1173 |
| Jaar: |
2003 |
| Inhoud: |
Hafnium oxide films were deposited on Si (100) substrates using metal-organic chemical vapor deposition (MOCVD) and evaluated for gate dielectric applications. For this study, two types of precursors were tested: an oxygenated one, Hf butoxide-mmp, and an oxygen-free one, Hf diethyl-amide. Depositions were carried out in the temperature range of 350-650°C. However, the discussion is focused on amorphous films. The films were compared on the basis of growth rate, phase development, density, interface characteristics, and electrical properties. A similar amorphous to polycrystalline phase transition temperature was found for both precursors. For low deposition temperatures the growth rate for the amide precursor was significantly higher than for the butoxide-mmp precursor and films prepared with the amide precursor contained a lower carbon impurity content than with the butoxide-mmp one. The dielectric constant was slightly higher for amorphous HfO2 deposited from the amide precursor than for the butoxide-mmp one. Only in respect to the trap density does the butoxide precursor seem advantageous. |
| Uitgever: |
Taylor & Francis |
| Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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