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Details for article 5 of 47 found articles
| Title: |
An optical probe for ferroelectric thin film memory capacitors |
| Author: |
Thakoor, Sarita Perry, J. Maserjian, J. |
| Appeared in: |
Integrated ferroelectrics |
| Paging: | Volume 4 (1994) nr. 4 pages 333-340 |
| Year: |
1994-06-01 |
| Contents: |
An optical probing of sol-gel derived polycrystalline thin films of lead zirconate titanate (PZT), sandwiched between two metal electrodes to form a memory capacitor, is described. In principle, both electronic as well as thermal mechanisms could be triggered by photon exposure on to ferroelectric thin films. Choice of the illumination intensity and wavelength, combined with the nature of the top electrode of the device determine the predominant phenomenon observed. The effects of two distinct optical probes: first, a non-coherent (300 nm to 600 nm), relatively weak intensity source and second, an energetic laser pulse are described. The photoresponse to the non-coherent illumination source is observed to be a probe of the space charge distribution within the ferroelectric thin film. On the other hand, utilizing laser pulses, with a full width at half maximum of ∼10 ns at 532 nm wavelength, a high speed nondestructive probing of the polarization state of the memory is demonstrated. The polarization direction of the ferroelectric capacitor is reflected in the direction of the photocurrent response. Comparison of such laser readout signals from devices with semitransparent and opaque top electrodes respectively suggests that the observed non-destructive readout signal component is primarily due to thermally triggered mechanisms. |
| Publisher: |
Taylor & Francis |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 5 of 47 found articles
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