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Details for article 21 of 47 found articles
| Title: |
Ferroelectric properties and reliability of La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O heterostructures on si for non-volatile memory applications |
| Author: |
Lee, J. Ramesh, R. Keramidas, V. G. Auciello, O. |
| Appeared in: |
Integrated ferroelectrics |
| Paging: | Volume 9 (1995) nr. 4 pages 317-333 |
| Year: |
1995-08-01 |
| Contents: |
Highly oriented La-Sr-Co-O(LSCO)/Pb-La-Zr-Ti-O(PLZT)/La-Sr-Co-O heterostructures have been successfully grown on a highly oriented Pt film which was grown on a thermally oxidized Si (SiO2/Si) substrate. The growth of oriented Pt film on the SiO2/Si substrate was made possible through the use of a thin bismuth titanate template layer which is c-axis oriented on the SiO2/Si substrate. The hybrid LSCO/Pt structure effectively reduced the sheet resistance of the electrodes by at least 3-5 times compared with a single LSCO electrode. These ferroelectric PLZT capacitors on Si exhibited symmetric hysteresis loops with very desirable ferroelectric properties. The test capacitors showed reliable performance at both room and high (100°C) temperatures with respect to fatigue, retention, aging, and imprint, suggesting that they can be used as reliable, nonvolatile memory elements. |
| Publisher: |
Taylor & Francis |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 21 of 47 found articles
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