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| Titel: |
A comparative study of tunable Ba1-xSrxTiO3 thin film capacitors prepared by rf-sputtering and liquid-phase deposition |
| Auteur: |
Outzourhit, Abdelkader Naziripour, Ali Trefny, John U. Kito, Tomoko Yarar, Baki Yandrofski, Robert Cuchiaro, J. D. Hermann, Allen M. |
| Verschenen in: |
Integrated ferroelectrics |
| Paginering: | Jaargang 9 (1995) nr. 4 pagina's 227-241 |
| Jaar: |
1995-08-01 |
| Inhoud: |
Ba1-xSrxTiO3 thin film capacitors have been successfully prepared using rf-sputtering and a metal organic deposition (MOD) method. The structure, microstructure and composition of the BSTO films are presented. Films grown on lanthanum aluminate LAO(100) showed c-axis preferred growth orientation. Broad paraelectric-to-ferroelectric transitions were observed in films prepared by both methods. The tunability of the capacitance by means of an appplied electric field is examined using various capacitor geometries. A decrease in the capacitance exceeding 75% at 77 K was obtained from the MOD deposited films under an electric field strength of 0.3 MV/cm. On the other hand, the tunability of the capacitance in the rf-sputtered films ranged from 5 to 10% at 77 K and at 20 kV/cm, while it exceeds 50% in some films. The results are compared with the predictions of Devonshire's phenomenological theory. |
| Uitgever: |
Taylor & Francis |
| Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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