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| Titel: |
The effects of PECVD silicon dioxide passivation on the electrical characteristics of Sol-Gel deposited PZT film capacitors |
| Auteur: |
Rod, Bernard J. McCullen, Judith Moore, Randall A. Terrell, Jonathan |
| Verschenen in: |
Integrated ferroelectrics |
| Paginering: | Jaargang 4 (1994) nr. 2 pagina's 155-164 |
| Jaar: |
1994-03-01 |
| Inhoud: |
Plasma-enhanced chemical vapor deposition (PECVD) of doped and undoped silicon dioxide layers is widely used throughout the semiconductor industry for the passivation of processed devices before the final metallization processing steps. However, a reduction in the remanent polarization of PZT platinum-electrode capacitors has been observed when the capacitors were passivated with PECVD silicon dioxide films. This paper presents the results of a study to determine the effects of a standard PECVD silicon dioxide process on the retained polarization of Sol-Gel derived PZT capacitors with platinum electrodes. The retained polarization of the capacitors was measured before and after the silicon dioxide depositions. Measurements indicate that for PZT capacitors with temperature-stabilized top electrodes, there is relatively little change in the retained polarization after the depositions. However, for the PZT capacitors without the temperature-stabilized top electrodes, reductions in excess of 70% in the retained polarization can occur. |
| Uitgever: |
Taylor & Francis |
| Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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