Semiconductors at high pressure: New physics with the diamond-anvil cell
Title:
Semiconductors at high pressure: New physics with the diamond-anvil cell
Author:
Spain, Ian L.
Appeared in:
Contemporary physics
Paging:
Volume 28 (1987) nr. 6 pages 523-546
Year:
1987-11-01
Contents:
A brief review is given of experiments on semiconductors at high pressure, using the diamond-anvil cell. Experimental techniques are discussed first, with emphasis on the reasons why they have revolutionized high-pressure science. Then, examples of experimental results are given, including X-ray diffraction (equation of state, structural phase transitions, metastable phases), Raman and Brillouin spectroscopy (lattice-mode frequencies), photoluminescence spectroscopy (electronic and defect energies), resistivity and galvanomagnetic effects (scattering mechanisms and electronic transitions). These examples are taken from Si, GaAs, InP and solid H2.
Journal description