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Details for article 56 of 60 found articles
| Title: | |
| Author: | |
| Appeared in: |
Advances in physics |
| Paging: | Volume 32 (1983) nr. 5 pages 715-751 |
| Year: |
1983 |
| Contents: |
The current status of investigations for the rival effect of disorder and electron-electron interaction in the intermediate-concentration regime of doped semiconductors is reviewed from the standpoint of transfer-diagonal formulation. In particular, effects of electron-electron interaction on the electronic specific heat and magnetic properties at low temperatures are clarified, and theoretical results are compared with the experimental ones on phosphorusdoped silicon. The formulation to stimulate the Anderson-localized states in the intermediate concentration regime of doped semiconductors by a cluster model is presented, and the results of the computer simulation are discussed in detail. |
| Publisher: |
Taylor & Francis |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 56 of 60 found articles
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